2N3421

Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
Contextual Info: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420

BU606D

Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440

2N5415

Contextual Info: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

2N3418

Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:

2N3419

Abstract: 2N3420 2N3418
Contextual Info: NPN Meduim Power Silicon Transistor 2N3418, 2N3419, 2N3420 & 2N3421 2N3418S, 2N3419S, 2N3420S & 2N3421S Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/393 • TO-5, TO-39 (TO-205AD) Package Maximum Ratings

2N3421

Abstract: 2N3419 2N3420 2N3418 1000C 2N3419S 2N3420S 2N3421S
Contextual Info: TECHNICAL DATA NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Devices 2N3418 2N3814S Qualified Level 2N3419 2N3419S 2N3420 2N3420S JAN JANTX JANTXV 2N3421 2N3421S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: 2N3419S+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

2N3419

Contextual Info: 2N3419+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200# I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0

Contextual Info: 2N3419S+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

2N3419

Abstract: 2N3420 2N3421 2N3418 Unitrode transistors data To5 2N3416 JANTXV2N3418 JANTXV2N3419 2n3418-2n3421 N3421
Contextual Info: POWER TRANSISTORS JAN, JANTX, JAN, JANTX, JAN, JANTX, JAN, JANTX, 3 Amp, 80V, Planar NPN & JANTXV 2N3418 & JANTXV 2N3419 & JANTXV 2N3420 & JANTXV 2N3421 FEATURES DESCRIPTION • M e e t s M IL -S -1 9 5 0 0 / 3 9 3 U n it r o d e p o w e r t r a n s is t o r s p r o v id e a u n iq u e

2N3419

Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3419 APPLICATIONS: • • • Power Supply Pulse Amplifier High Frequency Power Switching FEATURES: • • • • • Meets MIL-S-19500/393 Collector-Base Voltage: up to 125V

2N3016

Abstract: TO61 package TO111 package 2N3419 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N2891 2N2892 TO-5 TO111 TO- 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV

B0937

Abstract: KT817G 2SC1984 B0241B 2SC1025 BUW64A to-53 2S093
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 45 50 SSP62B B0241B TIP31B 2N424A 2N424 BOT29B BOT29B BOT29BF B0179 2Nl647 2S094 2N2308 R4923 2SC489 2N3419 2N2983 BOT31BF BOT31BF MJE31B 2N4233 2N4233A 042Cl0 2N4075 2S0129 2S0297 2S0317A

2N3419

Abstract: 2N3418 c 3420 transistor 2N3420 2N3421
Contextual Info: 2N3418 2N3419 2N3420 2N3421 > ~ k , General ^ ^ ^ Semiconductor -3 Industries, Inc. NPN SILICON POWER TRANSISTORS DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These NPN devices are designed for use in high speed switching and medium power amplifier applications. JAN, JAN TX, and JA N TXV devices to MIL-S-19500/393 are available. The latest

Contextual Info: Micmsemi NPN Transistors Part Number NPN JANTXV2N3420 JANTXV2N3420S 2N3419 2N3419S 2N3421 2N3421S 2N3419 2N3419S JAN2N3421 JAN2N3421S 2N3419 2N3419S JANS2N3421 JANS2N3421S 2N3419 2N3419S JANTX2N3421 JANTX2N3421S 2N3419 2N3419S

2N2891

Abstract: 2N2985 2N3016 2N3419
Contextual Info: COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No C ase 2N2891 2N2892 TO-5 TO111 TO111 TO -5 T O -5 TO -5 TO -5 TO -5 STUD TO 61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419

2N3419

Contextual Info: 2N3419+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200# I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0

2N3419

Abstract: 2n341 2N3420 2N3421
Contextual Info: POWER TRANSISTORS JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEATURES • M eets MIL-S-19500/393 • C ollector-Base Voltage: up to 125V • Peak Collector Current: 5A

SDT423

Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
Contextual Info: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664

2N3419

Contextual Info: NPN Meduim Power Silicon Transistor 2N3418, 2N3419, 2N3420 & 2N3421 2N3418S, 2N3419S, 2N3420S & 2N3421S Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/393 • TO-5, TO-39 TO-205AD Package Maximum Ratings Symbol 2N3418, S 2N3420, S 2N3419, S