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    2N5068 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5068 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=5 / Hfe=20-80 / fT(Hz)=4M / Pwr(W)=88 Original PDF
    2N5068 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5068 API Electronics Short form transistor data Short Form PDF
    2N5068 Boca Semiconductor COMPLEMENTARY SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=5 / Hfe=20-80 / fT(Hz)=4M / Pwr(W)=88 Scan PDF
    2N5068 Central Semiconductor Silicon Power Transistors, TO-3 Scan PDF
    2N5068 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N5068 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5068 General Diode Transistor Selection Guide Scan PDF
    2N5068 General Transistor Power Transistor Selection Guide Scan PDF
    2N5068 Mospec POWER TRANSISTORS(5.0A,87.5W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=5 / Hfe=20-80 / fT(Hz)=4M / Pwr(W)=88 Scan PDF
    2N5068 Mospec Complementary Silicon Transistor Scan PDF
    2N5068 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N5068 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5068 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5068 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5068 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5068 Unknown Vintage Transistor Datasheets Scan PDF
    2N5068 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5068 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N5068 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2N5068 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: U nc, 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 301 376-2922 (212)227-6005 FAX: (201) 376-8960 ULTRA LOWr.c (sat) SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS COMPLEMENTARY TYPES 2N3677 (PNP) 2N5068INPN) rgc ''»<> 4 Ohms TYPICAL


    Original
    2N3677 2N5068INPN) li/16" 159KHz PDF

    2N5067

    Abstract: 2N5068 2N5069 2N4901 2N4902 2N4903
    Text: Product Specification www.jmnic.com 2N5067 2N5068 2N5069 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4901,2N4902,2N4903 ・Low collector-emitter saturation voltage APPLICATIONS ・For general–purpose switching and power amplifier applications.


    Original
    2N5067 2N5068 2N5069 2N4901 2N4902 2N4903 2N5067 2N5068 2N5069 2N4903 PDF

    2N5068

    Abstract: No abstract text available
    Text: 2N5068 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5068 O204AA) 31-Jul-02 2N5068 PDF

    2N5068

    Abstract: 2N5067 2N5069
    Text: SavantIC Semiconductor Product Specification 2N5067 2N5068 2N5069 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4901/4902/4903 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications.


    Original
    2N5067 2N5068 2N5069 2N4901/4902/4903 2N5067 2N5068 2N5069 PDF

    2N5068

    Abstract: No abstract text available
    Text: 2N5068 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5068 O204AA) 18-Jun-02 2N5068 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5068 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)88 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2N5068 PDF

    2N5068

    Abstract: 2N5067 2N5069
    Text: Inchange Semiconductor Product Specification 2N5067 2N5068 2N5069 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4901/4902/4903 ・Low collector saturation voltage APPLICATIONS ・For general–purpose switching and power amplifier applications.


    Original
    2N5067 2N5068 2N5069 2N4901/4902/4903 2N5067 2N5068 2N5069 PDF

    2N5068

    Abstract: No abstract text available
    Text: 2N5068 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5068 O204AA) 16-Jul-02 2N5068 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    2N5067

    Abstract: tl 5069
    Text: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903


    OCR Scan
    2N5068. 2N5069 2N5067, 2N5068, 2N4901 2N4903 2N5067 2N5068 2N5069 tl 5069 PDF

    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan
    2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A PDF

    2N3713

    Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
    Text: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914


    OCR Scan
    2N5067 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 2N3791 2N4399 2N4903 2N3713 2n3055 complement 2N5068 2N3055 2N3714 2N3790 PDF

    2N1620

    Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan
    2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N1620 2N1211 2N1886 2N2032 2N5631 JANTX 2N389 2N389A PDF

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I ELECTRONICS INC Ëb 26C 00224 D T-33-0\ D eT| 0DM35T5 D0D0S54 3 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N5002 T0111/1 TO111/1 TO -3 TO -3 T O -3 TO 111/1 TO 111/1 TO- 2N5004 2N5067 2N5068 2N5069


    OCR Scan
    T-33-0\ 0DM35T5 D0D0S54 2N5002 2N5004 2N5067 2N5068 2N5069 2N5074 2N5075 PDF

    2N1647

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages Va V« V V Test Conditions Ib Ic Iebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2 1.0


    OCR Scan
    2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N2828 2N2829 0435C TWX-510-224-6582 2N1647 PDF

    2N2828

    Abstract: 2N2383 2N1886 2n1250
    Text: POWER TRANSISTORS PT TYPE NO. M AXIM UM RATINCS BV cbo B V ceo BV ebo lc V V V A Watts hft @ 25°C MIN MAX 65> lc VCE A V Sat Voltages Vci Vet V V Test Conditions Ib lc A A It 80 ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1


    OCR Scan
    2N5067 2N5068 N5069 2N5629 2N5630 2N5631 2N5632 2N5633 2N5634 2N389 2N2828 2N2383 2N1886 2n1250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069


    OCR Scan
    2N5468 2N5469 2N2811 2N2812 2N2813 2N6495 2N4231 2N4232A 2N4233 2N4233A PDF

    2N4901

    Abstract: 2N5068 2N4903 2N4902 2N5067 2N5069 2M901
    Text: 2Nl*902 2N5068 2M901 Central Semiconductor Corp. Central Semiconductor Corp. Central semiconductor Corp. 2N5067 +l;l 2Ni»903 2N5069 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS 1 4 5 Adam s Avenue Hauppauge, N ew Y ork 11 7 8 8 JEDEC TO-3 CASE DESCRIPTION


    OCR Scan
    2M901 2N5067 2N4902 2N5068 2N4903 2N5069 2N4901, 2N5067 200mA 2N4901 2N5068 2N5069 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan
    5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 PDF

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


    OCR Scan
    0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan
    5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487 PDF

    transistor 40411

    Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
    Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30


    OCR Scan
    TC-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan
    0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF