2N4297 Search Results

2N4297 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
2N4297	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF
2N4297	Diode Transistor	Transistor Short Form Data - TO-3	Scan	PDF
2N4297	General Transistor	NPN Power Transistors	Scan	PDF
2N4297	High Voltage Semi-Conductor Specialists	Silicon Power Transistors	Scan	PDF
2N4297	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N4297	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N4297	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N4297	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4297	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4297	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4297	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4297	Unknown	Transistor Replacements	Scan	PDF
2N4297	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N4297	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2N4297	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N4297	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N4297	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N4297	New England Semiconductor	NPN TO-66 Transistor	Scan	PDF
2N4297	Semiconductor Technology	High Voltage Silicon Medium Power Transistors	Scan	PDF
2N4297	Silicon Transistor	Low Frequency Silicon Power Transistor	Scan	PDF

2N4297 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bu808 equivalent Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143 Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200	Original	2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143	PDF
2SK1045 Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373 Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100	Original	2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373	PDF
STi20 Abstract: SK3537 Text: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 >= 40346V2 40346V2 40346V2 DTL1657 2N3583 SPT3440 MPSU04 MPSU04 DTL1638 2N6721 DTl1648 TRS4926 TRS4926 TRS4926 STI2006 MST20B MST20B STI20 STI205 TRS2006 ~~kJgg8 25 30 2N5662 SK3537 2N6722 2N6722	Original	237var 220AB 37var 2N6723 2N6771 BUW40 STi20 SK3537	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2n7588 Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149 Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.	OCR Scan		PDF
2N3583 Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430 Text: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D \| 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561	OCR Scan	INC77 0GDG132 2N5427 2N5428 2N5429 30-12atts 2N5838 2N5839 2N5840 2N3902 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430	PDF
MD14 Abstract: TRSP4015 TRSP2755S TRSP3015 TRSP3015S TRSP3505 TRSP3515S TRSP4015S TRSP4255S TRS4506 Text: HIGH VOLTAGE flO DE • 4 471D7Ö 00000G7 T SILICON PNP - POWER TRANSISTORS MAX. COLL. DISS. in Free Air #25“ C MAX. THERMAL RES. Junctiqp to Case - h FE BIAS T E M R Watts Is Ic BV cb q BV “ ° BVcE° B V « , @280 U 0118»» (AMP) (AMP) (VOLT) (VO LT) (VOLT)	OCR Scan	471D7Ã 00000G7 TRSP2755S MD-14 TRSP3015 TRSP3015S TRSP3505 MD14 TRSP4015 TRSP3515S TRSP4015S TRSP4255S TRS4506	PDF
5N520 Abstract: No abstract text available Text: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25	OCR Scan	2N6317 2N6318 2N6372 2N6373 2N6374 2N5955 2N5954 5N520	PDF
15j03 Abstract: 40328 npn darlington 400v 15a pnp 400v 10a 2N4296 BU326S 2N3583 2N3584 2N4297 2N4298 Text: K CO INC ¿ A4D D g 2 Û 4 A 3 S E Od U i Q D j g ~j K A Ñ ¿ I S T f t R TKir. ,S 4 D 00 13 0DD013E B D T .2 V Q C Ì DIODE TRál\l5J5TQR CO. INC. 201 686-0400 • Telex; 139-385 • Outside NY & NJ area call TO LL FR E E 800-526-4561 FAX No. 201-575-5863	OCR Scan	0DD013E 2N5427 2N5428 2N5429 2N5430 2N5839 2N5840 2N3902 2N6542 2N6543 15j03 40328 npn darlington 400v 15a pnp 400v 10a 2N4296 BU326S 2N3583 2N3584 2N4297 2N4298	PDF
2NXXXX Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746 Text: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z	OCR Scan	fl2S40a2 2N3740 2N3741 2N3744 O-111 2N3745 2N3746 2N3747 2NXXXX SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3861	PDF
Untitled Abstract: No abstract text available Text: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 \| SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw	OCR Scan	3B69720 07C00256 000055b	PDF
Untitled Abstract: No abstract text available Text: NEW E N 6 L A N D SEMICONDUCTOR S'îE ]> ÜQÜDDMT NPN TO-66 077 INES lc MAX = 1-7A Vce<xsu$) = 3 5-4 00 V = .75-50 M Hz I t Case 8 0 9 T'33' o I Type No. PNP Comple ment VCEfl (SUS) (V) 1C (MAX) W hFI IC/VCE (min-max ® A/V) Ptt @ TC = 2 5 °C (Watts)	OCR Scan	5-400V T--33- 2n3054a 2n6049 2n3583 2n6211 2n3584 2n6212 2n3585 2n6213	PDF
Untitled Abstract: No abstract text available Text: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013	OCR Scan	2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600	PDF
Untitled Abstract: No abstract text available Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘	OCR Scan	O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111	PDF

hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
STI-3007 Abstract: STI-3007 A STI3007 2N546b SE7020 2N3583 2N3584 2N3738 2N3739 2N4296 Text: SE MICO ND UC TO R TECHNOLOGY OSE D I fl13b 4 Sfl 00□0221 1 1 SEMICONDUCTOR TECHNOLOGY, INC. ^ L l l i L y N J ; U L HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS • -r ' w oO -n/ g 0, 0H c c , ct t J 3131 S.E. Jay Street " Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511	OCR Scan	313ti4SÃ 0D002E1 2N3583 2N3584 2N3585 2N3738 2N3739 STI-6006 STI-6007 STI-7006 STI-3007 STI-3007 A STI3007 2N546b SE7020 2N4296	PDF
Untitled Abstract: No abstract text available Text: NE III EN6LAND SEMICONDUCTOR S'ìE ]> bSt.M R'ìa OOOOOM' ì NPN TO-66 077 H N ES lc M A X = 1 -7 A V ce<xsus) = 3 5 -4 0 0 V fi = .75-50 MHz Case 809 T '3 S ' O / le {MAX) W 2N6049 2N6211 2N6212 2N6213 55 250h 300* 400h 4 1 5 5 25-100 5/4 40-200® 5/10	OCR Scan	2N6049 2N6211 2N6212 2N6213 2N3740 2N3741 2N6372 2N6373 2N6374 2N5956	PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF
Untitled Abstract: No abstract text available Text: = 1-7A V ceo sus = 3 5 -4 0 0 V fT = .75-50 M Hz lc(MAX) IMPN TO-66 Case 8 0 9 PNP VCE (SAT) @ IC / IB (V @ A /A ) VCEO (SUSI (MAX) (V) (A) 2N6049 2N6211 2N6212 2N6213 55 250b 300h 4001* 4 1 5 5 25-100 . 5/4 40-200®.5/10 25-100@1/10 25-100@1/10 10.5/.05	OCR Scan	2N6049 2N6211 2N6212 2N6213 2N3740 2N3741 40-16G@ 2N6312 2N5660 2N5661	PDF
5N520 Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278 Text: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V	OCR Scan	0-300V 2N1938 2N1937 2N3265 2N6260 2N6261 2N6315 2N6317 2N6316 2N6318 5N520 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278	PDF

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2N4297 Search Results

2N4297 Datasheets (20)

2N4297 Datasheets Context Search

bu808 equivalent

2SK1045

STi20

la 4440 amplifier circuit diagram 300 watt

2n7588

2N3583

MD14

5N520

15j03

2NXXXX

Untitled

Untitled

Untitled

Untitled

hep 154 silicon diode

MC2259

RCA SK CROSS-REFERENCE

transistor c2060

y51 h 120c

STI-3007

Untitled

3TE445

Untitled

5N520