2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L JAN2N3439 JAN2N3439L JANS2N3439 JANS2N3439S JANTX2N3439 JANTX2N3439L JANTXV2N3439 JANTXV2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

2N3016

Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
Contextual Info: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418

2N3016

Abstract: TO61 package TO111 package 2N3419 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N2891 2N2892 TO-5 TO111 TO- 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV

2N2891

Abstract: 2N2985 2N3016 2N3419
Contextual Info: COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No C ase 2N2891 2N2892 TO-5 TO111 TO111 TO -5 T O -5 TO -5 TO -5 TO -5 STUD TO 61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419

2N2891

Abstract: 2N3016 2N3419
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX

Contextual Info: 2N2985 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)155 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)2.0

SDT423

Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
Contextual Info: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664

2N3186

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N3016

Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
Contextual Info: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

Contextual Info: Ic = 3.0 AMPS DEVICE TYPE PACKAGE 2N1647 2N1648 2N1649 2N1650 T O -111 TO-111 TO-111 TO-111 80 80 80 80 80 120 80 120 6.0 6.0 6.0 6.0 20.0 20.0 20.0 20.0 15 15 30 30 - 45 45 90 90 0.5 0.5 0.5 0.5 10.0 10.0 10.0 10.0 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 0.1 0.1

Motorola -transistors

Abstract: Motorola diodes 2N3024 2N3025 2N3026 2N2984 2N2983 2N3021 2N3022 2N3023
Contextual Info: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 3 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors

2N3016

Abstract: 2N3419
Contextual Info: A P I ELECTRONICS INC 0043592 A P I ELECTRONICS 5b INC » F | d D 43Sc15 DDD025E D °*T"-33-0l 26C 0 0 2 2 2 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N2891 2N2892 TO -5 TO 111 TO 111 TO -5 T O -5 TO -5 TO -5 T O -5 STUD TO 61/1 TO -3

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

2N3016

Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40

2N2891

Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1

2N3916

Abstract: 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B 2N1445 2N1480 2N1700 2N1715
Contextual Info: 1 OSE D • fll3b4Sfl □QGQSM7 5 SEMICONDUCTOR TEC H N O LO G Y , INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 _ FAX 407-P8fi-8914 T -o Z q -O I SILICON TRANSISTORS r M E D I U M A M D H IG H P O W E R _

2n3223

Abstract: 2N3543 2N3222 2N2632 2k4075
Contextual Info: 81 3 4 6 9 3 S E M I C O A 40 D E | fll34bT3 □ □ □ D I E S 1 1 ^ 2 7 - 0 / NPN SILICON POWER TRANSISTORS Electrical Characteristics @ 25°C Maximum Ratings Device Type No. NPN Dissipation @ 25°C Case Watts (Cont.) Amps VCB Volts VCE Volts 2N3595 2N3596

Transistors 2n551

Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts

2SK847

Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247