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    2N367 Price and Stock

    Microchip Technology Inc 2N3676

    SMALL-SIGNAL BJT
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    Microchip Technology Inc 2N3675

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    Central Semiconductor Corp 2N3670-PBFREE

    SCR THRU HOLE TO-3
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    Central Semiconductor Corp 2N3670-TIN-LEAD

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    ECS International Inc ECXV-P35C2N-36.70016

    XTAL OSC VCXO 36.70016MHZ SMD
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    Find more 2N367 price and stock on Findchips.com

    2N367 Datasheets (150)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N367 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N367 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N367 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N367 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N367 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N367 Unknown Vintage Transistor Datasheets Scan PDF
    2N367 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N367 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N367 Unknown GE Transistor Specifications Scan PDF
    2N367 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3670 Central Semiconductor SILICON CONTROLLED RECTIFIER Original PDF
    2N3670 Motorola Silicon Controlled Rectifiers Original PDF
    2N3670 General Electric 12.5A silicon controlled rectifier. Vrm(non-rep) 660V. Scan PDF
    2N3670 General Semiconductor (2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS Scan PDF
    2N3670 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3670 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3670 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3670 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3670 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3670 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    ...

    2N367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: U nc, 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 301 376-2922 (212)227-6005 FAX: (201) 376-8960 ULTRA LOWr.c (sat) SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS COMPLEMENTARY TYPES 2N3677 (PNP) 2N5068INPN) rgc ''»<> 4 Ohms TYPICAL


    Original     		PDF 2N3677 2N5068INPN) li/16" 159KHz

    Untitled

    Abstract: No abstract text available
    Text: 2N3678 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.


    Original     		PDF 2N3678 Freq250M

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N3668-2N3670, 2N4103 12.5A SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Rating Symbol 2N3668 2N3669 2N3670 2N4103 Units Non-repetitive peak reverse voltage VRM 150 330 660 700 V Peak repetitive reverse voltage VRRM 100 200 400 600


    Original     		PDF 2N3668-2N3670, 2N4103 2N3668 2N3669 2N3670 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3676 O205AD) 19-Jun-02

    2N367

    Abstract: No abstract text available
    Text: 2N3675 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3675 Availability Online Store


    Original     		PDF 2N3675 2N3675 STV3208 LM3909N LM3909 2N367

    2n4319

    Abstract: 2N4195 2N3940 2N3990 2n4369 2n4158 IR122D3 2n3986 rca TYN40BG 2N3754
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755


    Original     		PDF 2N3669 2N3670 2N3679 2N3753 2N3754 2N3755 2N3756 2N3757 2N3758 2N3759 2n4319 2N4195 2N3940 2N3990 2n4369 2n4158 IR122D3 2n3986 rca TYN40BG

    Untitled

    Abstract: No abstract text available
    Text: 2N3676 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)90 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)8.8 Maximum Operating Temp (øC)175# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3676

    Untitled

    Abstract: No abstract text available
    Text: 2N3677 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3677

    2N4319

    Abstract: ST SEMICON INC aeg diode Sid 20 l 2N4205 2N4193 2N4166 2N4177 2N3759 TAG 600 2N4180
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755


    Original     		PDF 2N3669 2N3670 2N3679 2N3753 2N3754 2N3755 2N3756 2N3757 2N3758 2N3759 2N4319 ST SEMICON INC aeg diode Sid 20 l 2N4205 2N4193 2N4166 2N4177 TAG 600 2N4180

    SDT423

    Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
    Text: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664


    Original     		PDF 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 SDT423 SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418

    Untitled

    Abstract: No abstract text available
    Text: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3676 O205AD) 17-Jul-02

    2N3676

    Abstract: No abstract text available
    Text: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3676 O205AD) 1-Aug-02 2N3676

    2N5066

    Abstract: 2N3677/2N5066
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 ULTRA LOWfEc sat SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS USA • • • • • TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3677 2N5066 COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)


    Original     		PDF 2N3677 2N5066 2N5066 2N3677/2N5066 159kHz 2N3677/2N5066

    2N5066

    Abstract: TELEDYNE CRYSTALONICS 2N3677 veam
    Text: U L T R A LOWrEC sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS G E O M E T R Y 292, PG. 57 (2N3677) G E O M E T R Y 414, PG. 57 (2N5066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) rEc ^sat* 4 Ohms TYPICAL


    OCR Scan     		PDF 2N3677) 2N5066) 2N3677 2N5066 2N3677 2N5066 2N3677/2N 159kHz TELEDYNE CRYSTALONICS veam

    2N3670

    Abstract: scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621
    Text: fi E SOLI» STATE "Üb 3 8 7 5 0 8 1 G E S O L ID S T A T E Silicon Controlled Rectifiers- dF 01E | 3 fl7 5 []fll D 01 7 k f l 4 17684 2N3668-2N3670, 2N4103 File Num ber 12.5-A Silicon Controlled Rectifiers 116 TERMINAL DESIGNATIONS For Low-Cost Power-Control and Power-Switching


    OCR Scan     		PDF 3fl75[ D017kfl4 2N3668-2N3670, 2N4103 2N3668* 2N3669* 2N3670* 2N4103* 2N3670 scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621

    2N3669

    Abstract: scr 2n3668 2N3668 2N3670 2n4103 2n3668 datasheet
    Text: Datasheet 2N3668 2N3669 2N3670 2 N 4 1 03 SILICON CONTR O L L ED REC TI FI E R 16 AMPS 220 THRU 800 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-3 CASE


    OCR Scan     		PDF 2N3668 2N3669 2N3670 2N4103 2N3668, 2N3669, 2N3670, 2N4103 hermetica11 scr 2n3668 2n3668 datasheet

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOWree sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS GEOMETRY 2*2, (2N3677) GEOMETRY 485, (2NS066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) iec ,” tl 4 Ohms TYPICAL LOW G * LOW LEAKAGE HIGH BVebo


    OCR Scan     		PDF 2N3677) 2NS066) 2N3677 2N5066 2N3677 2N5066 2N3677/2N5066 159kHz 159kHz

    2N3677

    Abstract: 2N5066 CDA11
    Text: D /A SWITCHiES These circuits are designed specifically fo r D /A conversion, where low and stable Ron is of primary concern. Most o f these circuits use our own epitaxial junction bipolar transistors such as the 2N3677 and 2N5066. In addition to low Ron , most have an offset voltage of under 1 m illivolt. A ll of our circuits w ill


    OCR Scan     		PDF 2N3677 2N5066. to-10V 10KS2 CDA11 CDA11-S12. 2N5066 CDA11

    scr 2n3668

    Abstract: scr 2N3669 2N3688 scr RCA 2N3670 2N4103 2N3669 RCA 2N3669 2N3668 2N3668-2N3670 2N3670
    Text: 2N3668-2N3670, 2N4103 File Num ber 116 TERMINAL DESIGNATIONS 12.5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications Features: • ■ ■ ■ ■ Low switching losses High dl/dt and dv/dt capabilities Low leakage currents, both forward and reverse


    OCR Scan     		PDF 2N3668-2N3670, 2N4103 2N3668* 2N3669* 2N3670* 2N4103* scr 2n3668 scr 2N3669 2N3688 scr RCA 2N3670 2N4103 2N3669 RCA 2N3669 2N3668 2N3668-2N3670 2N3670

    Untitled

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^CBO ^C E O ^EBO PD Min (V) Min (V) Min (W) 0Tc=25°c 75 55 6 0.8 m 2N3678 'c (A) 0.8 *CM (A) ^CBO (PA) Max 0.01 VC8 *CES e (V)


    OCR Scan     		PDF 2N3678

    Untitled

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number NPN JANTX2N5339 JANTXV2N5339 2N5148 2N5150 2N4863 2N2657 2N4895 2N4896 2N2658 2N4897 2N3619 2N3E20 2N3627 2N3928 2N3623 2N3628 2N5541 2N5327 i 2N3675 : 2N3676 2N5237 2N5237S JAN2N5237 JAN2N5237S JANS2N5237 JANS2N5237S


    OCR Scan     		PDF

    2N5066

    Abstract: No abstract text available
    Text: aN sC RYSTALO N IC SsssO W ebsite: W W W .Crystalonics.com Phone: 631:981-6140 Fax:(631-585-4858) * S e e price list for o rd e rin g inform ation U L T R A LOW rcc (sat) P N P / N P N S W IT C H IN G T R A N S I S T O R S 2N3677 2N3677UB 2N5066 2N5066UB


    OCR Scan     		PDF 2N3677 2N5066 2N3677UB 2N5066UB 2N3677) 2N5066) 2N3677 2N5066 2N3677/2N5C6S 159kHz

    2N5066

    Abstract: T37Z 2N3677
    Text: TELEDYNE COMPONENTS 5ÖE D fiW b G S O GD bS äT T ULTRA LOWree sat 2N 3677 SILICON EPITA XIA L JUNCTION PNP/NPN SWITCHING TRANSISTORS 2N5066 GEOMETRY 292, (2N3677) GEOMETRY 485, (2N5066) T - 3 7 - 2 Ì jr-sr-Li • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)


    OCR Scan     		PDF 2n3677) 2n5066) 2N3677 N5066 T-37-Zi 2N3677 2N5066 2N3677/2N5066 159kHz T37Z

    2N3678

    Abstract: No abstract text available
    Text: Datasheet Central Sem iconductor Corp. 2N3678 NPN S ILIC O N TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T 0 - 3 9 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3678 is a Silicon NPN Epitaxial Planar Transistor designed for


    OCR Scan     		PDF 2n3678 t0-39 150mA, 500mA, 150mA 500mA 100MHz