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    onsemi 2N3678

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.8A I(C), 55V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-5
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    Quest Components 2N3678 41
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    2N3678 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3678 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
    2N3678 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3678 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    2N3678 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan PDF
    2N3678 Central Semiconductor NPN METAL CAN Transistors Scan PDF
    2N3678 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3678 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3678 Micro Electronics Semiconductor Devices Scan PDF
    2N3678 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3678 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3678 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3678 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3678 Unknown Vintage Transistor Datasheets Scan PDF
    2N3678 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3678 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3678 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3678 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3678 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3678 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3678 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N3678 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3678 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.


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    PDF 2N3678 Freq250M

    DIAC DB2

    Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
    Text: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors


    Original
    PDF C-120 OT-23 OT23-6L DO-213AB DO-214AC DO-214AA OT-223 O-252 DIAC DB2 BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF

    2N3742

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT (MHz) Cob (pF) *TYP ton (ns) toff (ns) (dB) NF


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    PDF 2N3724A 2N3725A 2N3734 2N3735 2N3742 2N3743 2N3762 2N3763 2N3764 2N3830

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


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    PDF 2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N3444

    Abstract: 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


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    PDF 2N3444 2N3467 2N3468 2N3868 2N3923 2N3945 2N4000 2N4001 24-November 2N3444 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502

    2N3742

    Abstract: bc140 Bc300 BC300-5 2N3678 2N4237 2N4926 2N5320 2N5321 2N5681
    Text: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. 2N3678 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^cao ^CEO ^EBO (V) (V) (V) Pd (W) Min Min Min @Tc=25°c 75 55 6 0.8 'c 'cm (A) (A) 'c 8 0 W ^CB 'ces ^CE e (V) (ma)


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    PDF 2N3678 2N3742 BC140-10 BC140-16 BC141 BC141-10 BC141-16 BC141-6 BC300 BC300-4 bc140 BC300-5 2N4237 2N4926 2N5320 2N5321 2N5681

    Untitled

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^CBO ^C E O ^EBO PD Min (V) Min (V) Min (W) 0Tc=25°c 75 55 6 0.8 m 2N3678 'c (A) 0.8 *CM (A) ^CBO (PA) Max 0.01 VC8 *CES e (V)


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    PDF 2N3678

    2N3678

    Abstract: No abstract text available
    Text: Datasheet Central Sem iconductor Corp. 2N3678 NPN S ILIC O N TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T 0 - 3 9 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3678 is a Silicon NPN Epitaxial Planar Transistor designed for


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    PDF 2n3678 t0-39 150mA, 500mA, 150mA 500mA 100MHz

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


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    PDF 2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700

    2N22A

    Abstract: 2N4271 2N3947 2N3326 2N3666
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


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    PDF 2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N4033

    Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
    Text: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107


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    PDF 2N3073 2N3081 2N3107 2N4032 2N3108 2N4030 2N3109 2N4033 2N3110 2N3115 2N4033 2N3702 2N3794 2N4235

    2N4033

    Abstract: 2N2905 2N3702
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120


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    PDF 2N2838 2N2868 2N2897 2N2904 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N4033 2N3702

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118

    Untitled

    Abstract: No abstract text available
    Text: DEVICE TYPE package BVCEO 8VC BO BVEBO ICBO VCB {V I M IN IV M I N IV ) M I N jm A I MAX |V) HFE <§> VC 4 1C M IN MAX 2N3395 2N3396 2N 3397 2N3398 2N 34U NPN NPN NPN NPN NPN TO-92 TO-92 TO-92 TO-92 TO-92 74) (74) (74) (74) (74) 25 25 25 25 25 25 25


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    PDF 2N3395 2N3396 2N3398 2N3415 2N3416 2N3417 2N3439 2N3440 2N3662 2N3663

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    2n697

    Abstract: 2N956 2N2905
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5


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    PDF 2N2218A 2N2221A 2N2868 2N3110 2N2194 2N2194A 2N2194B 2N697 2N697JAN 2N696 2N956 2N2905

    2N4033

    Abstract: 2N3704 2N3702
    Text: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S TYPE NO. PO LA­ R IT Y CASE Ic Pd H FE fT VcE sat VcEO Ic ^CE max (mA) (V) (V) Ic (A) min C 0b max VcER * (mW) (A) (V) min max CO M PLE­ M EN TARY TYPE (MHz) (MHz) 2N3299 N '10-39 800 0.5 30


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    PDF 2N3704 2N3706 2N3702 2N3703 2N3108 2N3020 2N3107 2N3109 2N2102 2N4033

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357