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    Untitled

    Abstract: No abstract text available
    Text: PD64MX6408 XXX D2X, PD128MX6416 (XXX) D2X SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • · · · · · · · · · · · · 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2700, PC3200 Utilizes DDR333 and DDR400 DDR SDRAM components


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    PDF PD64MX6408 PD128MX6416 PC2700, PC3200 DDR333 DDR400 512MB 64MX64) 128MX64) 8125us

    DD256M

    Abstract: T37Z TSOP 66 Package thermal resistance
    Text: 1 GigaBit Stacked DDR1 SDRAM DD54E, DD54ER 256M x 4 Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and


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    PDF DD54E, DD54ER DD54ER) DDR400) DD256M42U3BA DD54E 3887x132 DD54E) DD256M T37Z TSOP 66 Package thermal resistance

    T37Z

    Abstract: DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps
    Text: 1 GigaBit Stacked DDR1 SDRAM 128M x 8 DD55E, DD55ER Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and


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    PDF DD55E, DD55ER DD54ER) DDR400) DD128M82U3BA DD55E 3887x132 DD55E) T37Z DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps

    DM 024

    Abstract: T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung
    Text: White Electronic Designs WV3EG265M72EFSU-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA FEATURES DESCRIPTION Unbuffered 200-pin SO-DIMM , small-outline, dualin-line module The WV3EG265M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR


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    PDF WV3EG265M72EFSU-D4 2x64Mx72 200-pin WV3EG265M72EFSU 512Mb 64Mx8 PC-2100, PC-2700 133MHz, DM 024 T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung

    R9522

    Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
    Text: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1


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    PDF S773ETS IRF9522 IRF9523 R9522 R9523 T-37-Z5 O-220 -100V R9522 R9523 G-D-S TO-92

    ZVP 210

    Abstract: ZVP2210B zetex zvp ZVP P-channel
    Text: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


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    PDF ZVP2210B* ZVP2210L O-220 ZVP 210 ZVP2210B zetex zvp ZVP P-channel

    Q533

    Abstract: G307 TH 2053.3 ZVP2206L
    Text: "tS PLESSEY SENICOND/DISCRETE 7 2 2 0 5 3 3 P L E S S E Y D E ^ 7 2 5 Q533 95D S E M I C O N D / D I S C R E T E T P-channel enhancement mode vertical D M O S FET ' □GGSflDl 05601 37'25 ZVP2206 FEATURES • Com pact geometry • Fast sw itching speeds •


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    PDF ZVP2206 ZVP2206B* ZVP2206L 7gS0S33 G-307 T-37-Z5 G-308 Q533 G307 TH 2053.3