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    2N3619 Price and Stock

    Microchip Technology Inc 2N3619

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    2N3619 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3619 API Electronics Short form transistor data Short Form PDF
    2N3619 API Electronics 5 Amp NPN Transistors Scan PDF
    2N3619 API Electronics Short form transistor data Short Form PDF
    2N3619 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3619 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3619 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3619 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3619 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3619 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3619 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3619 Unknown Vintage Transistor Datasheets Scan PDF
    2N3619 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3619 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3619 PPC Products Transistor Short Form Data Scan PDF
    2N3619 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N3619 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3633

    Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    2N3186

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


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    A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N3186 PDF

    T100C

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


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    A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 T100C PDF

    2SB641 r

    Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


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    2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 r 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524 PDF

    2N2891

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


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    A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891 PDF

    BF689

    Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
    Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200


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    BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 PDF

    2N3609

    Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


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    RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625 PDF

    2N3633

    Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5


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    Untitled

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number NPN JANTX2N5339 JANTXV2N5339 2N5148 2N5150 2N4863 2N2657 2N4895 2N4896 2N2658 2N4897 2N3619 2N3E20 2N3627 2N3928 2N3623 2N3628 2N5541 2N5327 i 2N3675 : 2N3676 2N5237 2N5237S JAN2N5237 JAN2N5237S JANS2N5237 JANS2N5237S


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    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 PDF

    2N3016

    Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
    Text: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418


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    2N2891 2N2892 O-111 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3419 TO61 package PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    2N3016

    Abstract: 2N3419
    Text: A P I ELECTRONICS INC 0043592 A P I ELECTRONICS 5b INC » F | d D 43Sc15 DDD025E D °*T"-33-0l 26C 0 0 2 2 2 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N2891 2N2892 TO -5 TO 111 TO 111 TO -5 T O -5 TO -5 TO -5 T O -5 STUD TO 61/1 TO -3


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    DDD025E -33-0l 2N3016 2N3419 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    2N3016

    Abstract: TO61 package TO111 package 2N3419 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986
    Text: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N2891 2N2892 TO-5 TO111 TO- 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV


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    2N2891 2N2892 O-111 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 TO61 package TO111 package 2N3419 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2891

    Abstract: 2N2985 2N3016 2N3419
    Text: COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No C ase 2N2891 2N2892 TO-5 TO111 TO111 TO -5 T O -5 TO -5 TO -5 TO -5 STUD TO 61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419


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    2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 2N3419 PDF

    2N2891

    Abstract: 2N3016 2N3419
    Text: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX


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    2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 2N3419 PDF

    2N3627

    Abstract: 2N3598 2N3599 2N3619 2N3620 2N3621 2N3623 2N3628 2N3629 2N3630
    Text: BRE A K D O V VN V DLTAGE S hFE SAT O > • GES (M.iX. CASE V CB V CE V EB V CE (V) (A) M in. Max. (A) < NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST VŒ (V) 2N3598 TO-63 80 60 8 2 10 40 120 10 1 0.5 V BE (V) 2 2N3599 TO-63 100 80 8 2 10 40


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    2N3598 2N3599 2N3619 2N3620 2N3621 2IM3622 2N3623 2N3627 2N3628 2N3629 2N3630 PDF

    2N3016

    Abstract: D-733 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017 2N3018
    Text: A P I ELECTRONICS INC 0043592 A P I at ELECTRONICS ÏF| o D 4 3 S c15 26C INC ODDOaSS D - 7- - 3 00222 3 . I C O L L E C T O R CU R REN T = 5 AM PS N P N T Y PE S - CONTINUED D ev ice No C a se 2N2891 2N2892 T O -5 TO111 TO111 T O -5 T O -5 T O -5 T O -5


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    dD43Sc15 D-7--33. 2N2891 2N2892 O-111 2N2893 2N2984 2N2985 2N2986 2N3016 D-733 2N3017 2N3018 PDF