Untitled
Abstract: No abstract text available
Text: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)
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2N3421A
O205AD)
17-Jul-02
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2N3421ASMD05
Abstract: No abstract text available
Text: 2N3421ASMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount
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2N3421ASMD05
O276AA)
15-Aug-02
2N3421ASMD05
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2N3421A
Abstract: No abstract text available
Text: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)
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2N3421A
O205AD)
1-Aug-02
2N3421A
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Untitled
Abstract: No abstract text available
Text: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)
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2N3421A
O205AD)
19-Jun-02
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2N3421ASMD
Abstract: No abstract text available
Text: 2N3421ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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2N3421ASMD
O276AB)
15-Aug-02
2N3421ASMD
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2n3054 pnp
Abstract: TO77 package 2N3411
Text: Part number search for devices beginning "2N3054" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N3054
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html/2N3054
2N3054"
2N3054
2N3054A
2N3054-JQR-B
2N3250"
2N3250
40MHz
2n3054 pnp
TO77 package
2N3411
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Untitled
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
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2N3440A
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5
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O-39/TO-5
2N1479A
2N1480A
2N1481A
2N1482A
2N1714A
2N1715A
2N1716A
2N1717A
2N1890
2N3440A
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transistor T43
Abstract: No abstract text available
Text: 5L.E D • tn7QS7fl 0007004 T43 ■ Z E T B NPN HIGH CURRENT SWITCHING "r - 3 S “- o < TABLE 12 - NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors show n in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments.
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BUY92
BUY91
BUY90
BUY82
BUY81
BUY80
transistor T43
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pic 08m
Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174
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2N3053SM
2N3054
2N3055
2N3055/5
2N3055/6
2N3055/7
2N3055A
2N3055E
pic 08m
2N3055-7
2N3171
2N3172
2N3055H
2N3055-5
2N3055-6
2N3055 TO220
to-53
2N3411
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Untitled
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY DE | 7 2 2 0 S 3 3 □004^54 0 95D 04954 SEMICOND/DISCRETE -r-sr-/7 SWITCHING TABLE 6 - N P N SILICO N PLANAR HIGH CURRENT SW ITCHING T R A N SIST O R S The transistors shown in this table are designed for high current, high dissipation switching applications
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BUY82
BUY81
BUY92
BUY91
2N4037
BUY90
2N4036
TP-39
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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Untitled
Abstract: No abstract text available
Text: NPN HIGH CURRENT SWITCHING TABLE 12 - NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The tran sisto rs sh o w n in th is table are designed fo r high cu rre n t, high dissipation s w itc h in g a pplications in Industrial and M ilita ry equipm ents.
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BUY82
BUY81nsistors.
BUY81
BUY80
BUY91
BUY90
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