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    New Japan Radio Co Ltd 2N1988

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    Bristol Electronics 2N1988 138
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    Honeywell Sensing and Control 41SM1-H2N198

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    Master Electronics 41SM1-H2N198 36
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    2N198 Datasheets (179)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N198 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N198 Unknown Transistor Replacements Scan PDF
    2N198 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N198 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N198 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N198 Unknown Vintage Transistor Datasheets Scan PDF
    2N1980 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1980 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1980 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1980 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1980 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1980 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1980 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1980 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1980 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1980 Unknown Vintage Transistor Datasheets Scan PDF
    2N1980 Semitron Germanium Power Transistors Scan PDF
    2N1980 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N1981 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1981 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    ...

    2N198 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2N1981 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)70 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)6.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1981 StyleTO-36

    Untitled

    Abstract: No abstract text available
    Text: 2N1989 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)30m


    Original     		PDF 2N1989 Freq40M

    2N1990

    Abstract: No abstract text available
    Text: na. 20 STERN AVE. SPRINQRELD, NEW JERSEY 07081 U.SA TYPE NO DESCRIPTION VCBO VCEO V M Small Signal Transistors VEBO teo« VCB (MA) M M IFE et «vc (mA) 00 Vce(SAT)«lc M (mA) •CEO "ICES -ICEV —ICEH *VCER MIN MIN MIN 2N1975 NPNAMPUSWnrCH 100 60 7.0 2N1983


    Original     		PDF 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N19B8 2N2800 2N2S01 2N1990

    Untitled

    Abstract: No abstract text available
    Text: 2N1980 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)6.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1980 StyleTO-36

    Untitled

    Abstract: No abstract text available
    Text: 2N1984 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1984 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: 2N1985 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1985 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: 2N1988 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)30m


    Original     		PDF 2N1988 Freq40M

    2N2090

    Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607


    Original     		PDF OT85306 OT85506 OT85606 KSP1151 KSP1171 OT7A07 2N2090 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


    Original     		PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A

    TO36 package

    Abstract: 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 - 25 30 >= 40 45 50 60 See Index See Index See Index See Index Germanium See Index See Index See Index See Index Germanium 15 15 15 15 15 15 15 15 15 15 ~~n~7 ~elnClex ~~ 2N1557A MP1557 2N2078 2N2078A


    Original     		PDF 2N173 2N1358 2N174A 2N1549 MP1549 2N1549A 2N677 2N1553 2N1553A MP1553 TO36 package 2N2076 pnp germanium to36 TO36 TO41 dtg1210a 2N2076A 2N1560 2N1970 germanium

    2N2464

    Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
    Text: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40


    Original     		PDF 2N1945 O-205AD/TO-39: 2N1958A 2N1959A 2N1973 2N2464 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453

    2N2049

    Abstract: 2N1990 2N1987 2N1988 2N1989 2N2102 2N2192 2N2193 2N2194 2N2195
    Text: metsd-Cati Paciàcie^l^yìstslofs iWIA » • • w W w t • • ^ W F I lM W iw “* ■ “ w iiW Maximum Ratings Type No. 2N1987 ^CBO ^CEO V (V) Min Min 50 W w V w w w * PD (W) Min Tc=25°c (V) 'cm (A) (A) tso ^CB (UA) 0(V) Max 'ces W vce »FE e Min


    OCR Scan     		PDF 2N1987 2N1988 2N1989 2N1990 2N2049 2N2102 2N2219 2N2219A 2N2192 2N2193 2N2194 2N2195

    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


    OCR Scan     		PDF 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405

    transistor 152 M

    Abstract: No abstract text available
    Text: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages


    OCR Scan     		PDF 2IM1986 transistor 152 M

    2N545

    Abstract: 2n1117 2N541 2N1052 2N1054 2N1055 2N1116 2N546 2N547 2N548
    Text: S Û UA RE » CO/ G E N E R A L ôs a s s ü a 3918590 GENERAL SEMICONDUCTOR — / DEVICE TYPE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019


    OCR Scan     		PDF 052550a 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N4300 2H4B63 2n1117 2N541 2N1054 2N1055 2N1116

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N244

    Abstract: bfy5
    Text: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000


    OCR Scan     		PDF 2N3439 2N3742 BF259 2N19S7 2N2195 BSY52 2N1838 2N1B40 2N1644 2N1990 2N244 bfy5

    2N2049

    Abstract: 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N1613B 2N720A 2N721
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) 10 10 10 10 10 Cob COMPLE­ max MENTARY TYPE (PF) (A) fT min (MHz) 5 1.5 1.2 1.5 1.5 0.15 0.15 0.05 0.15 0.15 50 50 50 70 60 15 45 15


    OCR Scan     		PDF 2N720A 2N721 2N91I 2N956 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N2049 2N1613B

    2N2195

    Abstract: 2N198 2N1987 BFY72 BSY52 BSY53 BSY54 CL150
    Text: b3E J> CONTINENTAL DEVICE INDIA • 23033^4 QQQGOTl 2Tb ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Typ» V CBO V CEO V EBO *CBO No. (V) Min (V) M'm (V) Min (MA) Max 75 30 7 BSY53 0.010 V CB hFE 75 30 7 0.010 O 'c * (mA) V CE V C E (S a t)& V B E (S a t)° 'c


    OCR Scan     		PDF BSY53 BSY54 2N183S 2N1840 2N1S44 2N1J90 2N2218 2N2195 2N198 2N1987 BFY72 BSY52 CL150

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF