2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT200 Features • • This device is designed for general purpose amplifier applications at collector currents to 300mA.

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

MMBT200

Abstract: MMBT200A PN200 PN200A T092
Contextual Info: . D iscrete P O W E R & S ig n a l Technologies S e m i c o n d u c t o r ,M I MMBT200 PN200 PN200A / PN200A I MMBT200A MMBT200 MMBT200A S O T -2 3 Mark: N2 I N2A PNP General Purpose Amplifier This device is designed fo r general purpose amplifier applications

PN200

Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

SOT23 MARK Y3

Abstract: sot-23 Marking N2 MMBT200 10bv MARK N2 SOT-23 PN200
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

pn200

Abstract: MMBT200 MMBT200A PN200A
Contextual Info: PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT200 Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. PNP General Purpose Amplifier

SO45

Abstract: 2N243 2N2247 2SC1072 LOW-POWER SILICON NPN 2N472 2N2897 BSY10
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

PN200

Abstract: PN200A CBVK741B019 F63TNR MMBT200 MMBT200A PN2222N MARK N2 SOT-23
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

pn200

Abstract: MMBT200 MMBT200A PN200A
Contextual Info: PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol

pn200

Abstract: PR68 MMBT200 MMBT200A PN200A
Contextual Info: PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol

Contextual Info: PN200A UMi t a MMBT200A TO-236 SOT-23 TO- « 2 T L /G /1 0 1 0 0 -5 U r T L /G /1 0 1 0 0 -1 PNP General Purpose Amplifier Electrical Characteristics ta = 25°cunless otherwise noted Symbol Parameter Min Typ Max Units lc = 10 fiA 60 V BV c e o lc = 1 mA, (Note 1)

2N904

Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

Contextual Info: M M IC Q N B L C M R » PN200 PN200A MMBT200 MMBT200A / MMBT200A Mark: N2 / N2A PNP General Purpose Amplifier T his device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from P ro ce ss 68. A bsolute Maximum RâtinÇjS

ts3020

Abstract: PN200
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E Mark: N2 / N2A B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

CBVK741B019

Abstract: F63TNR MMBT200 MMBT200A PN200 PN200A PN2222N
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

MMBT200

Abstract: pn200
Contextual Info: PN200/MMBT200 E J l National J u t Semiconductor PN200 MMBT200 UjT /M/ /#/ M TO-236 SOT-23 TO-92 ED U ' TL/G/10100-5 *C . TL/G/10100-1 P N P G e n e r a l P u r p o s e A m p lif ie r E le c tric a l C h a r a c t e r is t ic s ta = 25°c unless otherwise noted

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MMBT2904

Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
Contextual Info: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)

HFA3424

Abstract: HFA3524 HFA3524IA HFA3524IA96 HFA3724 HSP3824 hfa35241 hp5385
Contextual Info: HFA3524 TM Data Sheet March 2000 File Number 2.5GHz/600MHz Dual Frequency Synthesizer Features The Intersil 2.4GHz PRISM chip set is a highly integrated six-chip solution for RF modems employing Direct Sequence Spread Spectrum DSSS signaling. The HFA3524 600MHz Dual

prescaler 64

Abstract: MMBT200 WB1220 NC219
Contextual Info: WB1220 Serial Input PLL with 2.0-GHz Prescaler Features Applications • Operating voltage 2.7V to 5.5V • Operating frequency: up to 2.0 GHz with prescaler ratios of 64/65 and 128/129 • Lock detect feature • Power-down mode • 20-pin TSSOP Thin Shrink Small Outline Package

rm73z1j000

Abstract: MCH182F104ZK TRANSISTOR R57 phillips ERJ-2RKF-20R0 MCH312F105ZP MCH215A101JK smd transistor RA5 smd transistor RA4 KXN1332A LL2012-F12NK
Contextual Info: Using The HFA3524EVAL Board TM March 2000 AN9809.3 Author: Milutin Culibrk Introduction The HFA3524 is a highly integrated Dual Frequency Synthesizer ideally suited for use in communications applications. The Synthesizer features include a dual modulus prescaler for

Contextual Info: HFA3524, HFA3524A if H A R R I S SEMICONDUCTOR July 1998 2.5GHz/600MHz Dual Frequency Synthesizer Features • 2.7V to 5.5V Operation • Low Current Consumption • Selectable Powerdown Mode Iqq = 1jliA Typical at 3V • Dual Modulus Prescaler, 32/33 or 64/65