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    2N546 Price and Stock

    NTE Electronics Inc 2N5460

    JFET P-CH 40V TO92
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    DigiKey 2N5460 Bag 1,315 1
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    Microchip Technology Inc 2N5467

    POWER BJT
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    Microchip Technology Inc 2N5466

    POWER BJT
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    onsemi 2N5462

    JFET P-CH 40V TO92
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    Central Semiconductor Corp 2N5460

    JFET P-CH 40V TO92-3
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    Find more 2N546 price and stock on Findchips.com

    2N546 Datasheets (272)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N546 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N546 Central Semiconductor Various Transistors Scan PDF
    2N546 Central Semiconductor Transistor Selection Guide Scan PDF
    2N546 General Diode Transistor Selection Guide Scan PDF
    2N546 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N546 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N546 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N546 Unknown Vintage Transistor Datasheets Scan PDF
    2N546 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N546 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N546 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N546 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N546 Unknown GE Transistor Specifications Scan PDF
    2N546 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N546 Semitronics Silicon Power Transistors Scan PDF
    2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
    2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
    2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
    2N5460 InterFET P-Channel silicon junction field-effect transistor Original PDF
    2N5460 Motorola CASE 2904, STYLE 7 TO92 (TO226AA) Original PDF
    ...

    2N546 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SST5461

    Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462 70262
    Text: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9


    Original     		PDF 2N/SST5460 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 2N/SST5460 2N/SST5461 2N/SST5462 SST5461 2N5460 2n5462 2N5461 SST5460 SST5462 70262

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461

    2N5466

    Abstract: 2N5467
    Text: SavantIC Semiconductor Product Specification 2N5466 2N5467 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High-voltage capability ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·They are intended for use in off-line power


    Original     		PDF 2N5466 2N5467 2N5466 2N5467

    2N5466

    Abstract: No abstract text available
    Text: 2N5466 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5466 O205AD) 1-Aug-02 2N5466

    2N5460

    Abstract: 2N5461 2N5462
    Text: 2N5460/5461/5462 Siliconix PĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 0.75 to 6 40 1 -1 2N5461 1 to 7.5 40 1.5 -2 2N5462 1.8 to 9 40 2 -4 Features Benefits Applications D High Input Impedance


    Original     		PDF 2N5460/5461/5462 2N5460 2N5461 2N5462 2N5460/5461/5462 P-37410--Rev. 2N5460 2N5461 2N5462

    SST5461

    Abstract: "P-Channel JFETs" 2N5460 2n5462 2N5461 SST5460 SST5462 2n EQUIVALENT
    Text: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9


    Original     		PDF 2N/SST5460 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 2N/SST5460 2N/SST5461 2N/SST5462 SST5461 "P-Channel JFETs" 2N5460 2n5462 2N5461 SST5460 SST5462 2n EQUIVALENT

    2n5467

    Abstract: No abstract text available
    Text: 2N5467 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5467 O205AD) 17-Jul-02 2n5467

    Untitled

    Abstract: No abstract text available
    Text: 2N5466 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5466 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5467 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 400V 0.41 (0.016)


    Original     		PDF 2N5467 O205AD) 19-Jun-02

    SST5461

    Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462
    Text: 2N/SST5460 Series P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9 –2 40 2 –4


    Original     		PDF 2N/SST5460 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 2N/SST5460 2N/SST5461 2N/SST5462 SST5461 2N5460 2n5462 2N5461 SST5460 SST5462

    2N5461

    Abstract: 2N5462 2N5460
    Text: ON Semiconductort 2N5460 2N5461 2N5462 JFET Amplifiers P–Channel — Depletion MAXIMUM RATINGS Symbol Value Unit Drain–Gate Voltage Rating VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc Forward Gate Current IG f 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		PDF 2N5460 2N5461 2N5462 226AA) 2N5460/D r14525 2N5462

    "P-Channel JFETs"

    Abstract: transistor 2N5461 2N5460 5461 Siliconix P-Channel JFETs 2N5461 2N5462
    Text: 2N5460/5461/5462 P-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 0.75 to 6 2N5461 1 to 7.5 40 1 –1 40 1.5 2N5462 1.8 to 9 –2 40 2 –4 Features Benefits Applications D High Input Impedance D Very Low Noise


    Original     		PDF 2N5460/5461/5462 2N5460 2N5461 2N5462 2N5460/5461/5462 P-37410--Rev. 04-Jul-94 "P-Channel JFETs" transistor 2N5461 2N5460 5461 Siliconix P-Channel JFETs 2N5461 2N5462

    Untitled

    Abstract: No abstract text available
    Text: 2N5468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5468 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5466 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400è V(BR)CBO (V)500 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5466

    Untitled

    Abstract: No abstract text available
    Text: 2N5462 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2N5462

    Untitled

    Abstract: No abstract text available
    Text: 2N5465 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)60 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2N5465

    P-Channel JFETs

    Abstract: sst5460 SST5461
    Text: 2N/SST5460 Series VISHAY T Vishay Sil icon ix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number V G S o ff ( V ) V (B R )G S S M i n ( V ) 2 N /S S T 5 4 6 0 0 .7 5 to 6 40 1 -1 2 N /S S T 5 4 6 1 1 to 7.5 40 1.5 -2


    OCR Scan     		PDF 2N/SST5460 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 S-04030-- 04-Jun-01 P-Channel JFETs

    2n5463

    Abstract: No abstract text available
    Text: SILICONIX INC lfiC D • 2N5460 SERIES fSTSiliconbc JtJm Ö2S473S QQ13ÖSQ fl in c o rp o ra te d P-Channel JFETs _r-'^S-25 The 2N5460 Series are low cost p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog , switchapplications. This series features two ranges of


    OCR Scan     		PDF 2S473S 2N5460 2N5461 2N5462 2N5463 2N5464 300Ms

    2N5463

    Abstract: 2N5465 2N5464 2N5460 2N5461 2N5462 2n5463-5
    Text: S IL IC O N IX INC 1ÎE I> 8 2 54 7 3 5 0013Ä50 S 2N5460 SERIES f ü Z 'S ilic o n ix JtJw • in c o r p o r a ts d P-Channel JFETs _ r - 'ä S - 2 S The 2N5460 Series are low cost p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog , switchapplications. This series features two ranges of


    OCR Scan     		PDF 2N5460 300ms 2N5463 2N5465 2N5464 2N5461 2N5462 2n5463-5

    2n5462

    Abstract: 2N5460 2N5461 MMBF5460 MMBF5461
    Text: M ICÜNDUCTQR tm 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 SOT-23 S Mark: 6 E / 6 1 U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high im pedance signal sources. Sourced from Process 89.


    OCR Scan     		PDF 2N5460 MMBF5460 2N5461 MMBF5461 2N5462 OT-23 6E/61U Vdg--15V 2n5462 MMBF5460 MMBF5461

    5461 AB

    Abstract: 2N5460
    Text: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 TO-226AA MAXIMUM RATINGS Rating Unit Sym bol Value V DG 40 Vdc VGSR 40 Vdc D rain-G ate Voltage R e v e rse G ate-S ource Voltage 3 'G(f> 10 m A dc Total D evice D issip a tio n ut T a - 2 5 X Derate ab o ve 2 5 X


    OCR Scan     		PDF 2N5460 2N5462* O-226AA) 5461 AB 2N5460

    P-Channel JFETs

    Abstract: marking 2n sot23 52431 2N/SST5461 SST5461
    Text: Tem ic 2N/SST5460 Series S e m i c o n d u c t o r s P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary P a rt N um ber VcS oB <V) V<BR)GSS M in (V ) gfe M in (m S ) l o s s M in (m A ) 2N/SST5460 0.75 to 6 40 1 -1 2N/SST5461 1 to 7.5


    OCR Scan     		PDF 2N/SST5460 2N5460 2N5461 2N5462 2N/SST5461 2N/SST5462 SST5460 SST5461 SST5462 P-Channel JFETs marking 2n sot23 52431

    P-Channel JFETs

    Abstract: 2N5460 "P-Channel JFETs"
    Text: Tem ic — _ 2N5460/5461/5462 P-Channel JFETs Product Summary P a rt N um ber VGS off (V) V(BR)GSS M in (V) gii, M in (m S) I n s s M in (mA) 2N5460 0.75 to 6 40 1 -1 2N5461 1 to 7.5 40 1.5 -2 2N5462 1.8 to 9 40 2 -4 Features Benefits Applications


    OCR Scan     		PDF 2N5460/5461/5462 2N5460 2N5461 2N5462 2N5460/5461/5462 O-226AA plastic5462 P-37410--Rev. P-Channel JFETs "P-Channel JFETs"

    SST5461

    Abstract: No abstract text available
    Text: calocflc P-Channel JFET Low Noise Amplifier CORPORATION \ J 2N5460- 2N54B5/SST5460 SST5465 - ABSO LUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified PIN CONFIGURATION Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 .-40V


    OCR Scan     		PDF 2N5460- 2N54B5/SST5460 SST5465 2N5460 2N5462 2N5463 2N5465 10sec) 310mW 2N5461, SST5461