2n1711
Abstract: No abstract text available
Text: 2N1711 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1711 Availability Online Store
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2N1711
2N1711
STV3208
LM3909N
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equivalent transistor 2N1711
Abstract: J 2N1711 2N1711 Data Sheet 2N1613 2N1711 N1711 2n1613 equivalent 2N1613 Data Sheet 2N1613-2N1711
Text: 2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers
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2N1613
2N1711
2N1613
2N1711
equivalent transistor 2N1711
J 2N1711
2N1711 Data Sheet
N1711
2n1613 equivalent
2N1613 Data Sheet
2N1613-2N1711
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2N1711
Abstract: st 2n1711 transistor 2n1711 "2N1711"
Text: 2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
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2N1711
2N1711
st 2n1711
transistor 2n1711
"2N1711"
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PDF
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2N1711
Abstract: No abstract text available
Text: 2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.
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2N1711
2N1711
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2N1613
Abstract: 2N1711
Text: NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits.
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2N1613
2N1711
2N1613
2N1711
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Untitled
Abstract: No abstract text available
Text: rm. 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA DESCRIPTION 2N1613 2N1711 2N1893 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-6960 NPN Silicon Transistor JEDEC TO-39 case 2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications.
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2N1613
2N1711
2N1893
2N1613,
2N1711,
2N1893
2N17H
Ic-500mA
300uA,
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Untitled
Abstract: No abstract text available
Text: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE
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2N1711
2N1711
150mA,
150mA
500mA
20MHz
100kHz
23-April
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PDF
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)
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2N1711
O205AD)
19-Jun-02
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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2N1711
Abstract: No abstract text available
Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)
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2N1711
O205AD)
17-Jul-02
2N1711
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transistor 2n1711
Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor
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M3D111
2N1711
MAM317
SCA54
117047/00/02/pp8
transistor 2n1711
2N1711
BP317
st 2n1711
"2N1711"
2N1711 philips
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage, RBE < 10Ω Ω
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2N1711
C-120
2N1711Rev
040406E
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2N1711
Abstract: No abstract text available
Text: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)
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2N1711
O205AD)
1-Aug-02
2N1711
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.
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2N1711
C-120
2N1711Rev250701
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transistor npn double
Abstract: TO-39 CASE to ambient 2N1711 D73 transistor
Text: N AUER PHILIPS/DISCRETE b^E T> • bbS3*131 GD2ÔD73 275 2N1711 SILICON PLANAR TRANSISTOR N-P-N double diffused transistor in a TO-39 metal envelope designed fora wide variety of applications such as d.c. and wideband amplifiers. QUICK REFERENCE DATA Collector-base voltage open emitter
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OCR Scan
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2N1711
7Z593220
bb53T31
002007b
transistor npn double
TO-39 CASE to ambient
2N1711
D73 transistor
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2N3019A
Abstract: 2N3501A
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725
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OCR Scan
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O-5/TO205AD/TO-39
T0205AD
2N697
2N1711
2N1613A
2N1893
2N2218A
2N2218AA
2N2219A
2N2219AA
2N3019A
2N3501A
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max7550
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 50 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to case • DC and wideband amplifiers.
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OCR Scan
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2N1711
max7550
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PDF
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2N2243
Abstract: 2n2405
Text: Medium Power Amplifiers and Switches TYPE PO LA CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B
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OCR Scan
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2N1566
2N1613
2N1613A
2N1613B
2N1711
2N1711A
2N1711B
2N1889
2N1890
2N1893
2N2243
2n2405
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2N310B
Abstract: 2N2270
Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*
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OCR Scan
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2N718A
2N720A
2N915
2N916
2N956
2N2221
2N2221A
2N2222
2N2222A
2N3700
2N310B
2N2270
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2N2222 - to-92
Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Text: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124
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OCR Scan
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2N1613
2N1711
2N1893
2N2219
2N2219A
2N2222
2N2222A
2N2297
2N2368
2N2369
2N2222 - to-92
2N2222A TO-92
JC547
2n2222 to92
2N3904 TO-92 type
JC500, Jc501
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2N1711
Abstract: 2N1711 MOTOROLA 2N956 2N956 MOTOROLA 2N3019 2N718 2N718A
Text: 2N718A 2N956 M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N718A 2N956 2N1711 VCER 50 Vdc Collector-Base Voltage v CBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ Tc = Derate above 25°C
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OCR Scan
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2N718A
2N956
2N1711
2N956
2N1711
O-206AA)
2N1711 MOTOROLA
2N956 MOTOROLA
2N3019
2N718
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2N2222A TO-18
Abstract: 2N2222 to92 2N2222A TO-92 2N3904 TO-92 type 2N2222 TO-92 2N6428 J 2N2369 2N1711 2N1893 2N2219
Text: N AMER PHILIPS/DISCRETE SSE D • bbS3131 G Q l b n a S ■ T-2.7-0J 14 Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE . PKG „ ' . 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A
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OCR Scan
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bbS3131
2N1613
2N1711
2N1893
2N2218
2N2219
2N2219A
2N2221A
2N2222
2N2222A
2N2222A TO-18
2N2222 to92
2N2222A TO-92
2N3904 TO-92 type
2N2222 TO-92
2N6428
J 2N2369
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PDF
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2N1711 MOTOROLA
Abstract: 2n1711 2N956 2N956 MOTOROLA 2n718a
Text: 2N718A 2N956 M A X IM U M R ATIN G S Rating Symbol 2N718A 2N956 2N1711 Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation a T ^ = 25°C Derate above 25°C PD Total Device Dissipation
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OCR Scan
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2N718A
2N956
2N1711
2N1711
T0-205AD)
ReferN1711
2N718A,
2N956,
2N1711 MOTOROLA
2N956
2N956 MOTOROLA
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