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    2SD1706 Search Results

    2SD1706 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1706 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1706 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1706 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1706 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1706 Panasonic Silicon NPN Epitaxial Planar Type Power Transistors Scan PDF
    2SD1706 Panasonic SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING Scan PDF

    2SD1706 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1155

    Abstract: 2SD1706
    Text: SavantIC Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications


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    PDF 2SB1155 2SD1706 10MHz 2SB1155 2SD1706

    2SB1155

    Abstract: 2SD1706
    Text: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


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    PDF 2SB1155 2SD1706 2SB1155 2SD1706

    2SB1155

    Abstract: 2SD1706
    Text: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage


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    PDF 2SB1155 2SD1706 2SB1155 2SD1706

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE Large collector current IC


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    PDF 2SB1155 2SD1706

    2SB1155

    Abstract: 2SD1706
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1155 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -7A ·Complement to Type 2SD1706


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    PDF 2SB1155 2SD1706 -100V; 2SB1155 2SD1706

    2SB1155

    Abstract: 2SD1706 PC803
    Text: JMnic Product Specification 2SB1155 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1706 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING


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    PDF 2SB1155 2SD1706 10MHz 2SB1155 2SD1706 PC803

    2SD1706

    Abstract: 2SB1155
    Text: Inchange Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1706 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications


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    PDF 2SB1155 2SD1706 2SD1706 2SB1155

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1706 2SD1706 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1155 • Features Package Dimensions • Low collector-emitter saturation voltage Vce<mo • Good linearity of DC current gain (Iife) • High collector current (Ic)


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    PDF 2SD1706 2SB1155

    2SB1155

    Abstract: 2SD170 2SD1706
    Text: Power Transistors 2SD 1706 2SD1706 Silicon N P N Epitaxial Planar Type Package Dim ensions Pow er Switching Com plem entary Pair with 2SB1155 U n it ! mm 5 2 max. • Features ‘ 1/3.2 6 .9 m i n . Ö H -*1 • Low collector-em itter saturation voLtage VcEtsao


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    PDF 2SD1706 2SB1155 bT32fl 2SD170Ó 32fiSS 2SB1155 2SD170 2SD1706

    2SD1706

    Abstract: 2SB1155
    Text: •>i ¿i«.-nííV.8iÍRÍ?/.í . .Tft»«*!‘i B s t B f - n r ' S 2SD1706 Silicon NPN Épitaxial Planar Type ■ Package Dimensions Power Switching Com plementary Pair with 2SB 1155 ■ Features • Low collector-emitter saturation voltage Vce<s«o


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    PDF 2SD1706 2SB1155 2SD1706 2SB1155

    2SD1570

    Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
    Text: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26


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    PDF 2SD1443 2SD1707 2SC3293 2SD1322 2SD1323 2SD1324 2SD1393 2SD1481 2SD1521 2SD1325 2SD1570 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


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    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    SC-62

    Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
    Text: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)


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    PDF 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1692 2SB1150 O-126) SC-62 2SD1666 2SD1667 2SD1668 2SD1669

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    KA 3264

    Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
    Text: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A


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    PDF 2SC2979 2SC3508 2SC2555 2SC3322 2SD1457 2SC3306 2SC3509 2SD1706 2SD1707 KA 3264 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371

    2SC4159

    Abstract: 2SC3358 2SC2914 2sc2724 2sc3153 2sc3158 2sc3277 2SC2839 2SD641 2SC 3298
    Text: - m € Type No. 2SC 3295.*, 2SC 3296 2SC 329L* 2SC 3298 . • 2SC 3298A 2SC 3298B 2SC 3299 2SC 3300 ^ 2SC 3301 ✓ 2SC 3302 y 2SC 3303 , 2SC 3304 2SC 3305 ^ 2SC 3306 ✓ 2SC 3307 . 2SC 3308 2SC 3309 ✓ 2SC 3310 ^ 2SC 3311 . 2SC 3312 2SC 3313 2SC 3314 ^


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    PDF 2SC3689 2SD801 2SD1459 2SD1587 2SD1264 2SDI763A 2SD1348 2SC1173 2SD1444 2SD1762 2SC4159 2SC3358 2SC2914 2sc2724 2sc3153 2sc3158 2sc3277 2SC2839 2SD641 2SC 3298

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD2340 equivalent

    Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707

    2SD2340 equivalent

    Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent

    2SC4470

    Abstract: 4892 2sc3904 2SC3356 2SC3609 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928
    Text: - m £ 2SC 4856 2SC 4857 2 SC 4858 % tt Manuf. T y p e No. = SANYO >¥ =n =# 2 SC 4859 2SC 4860 2SC 4861 2SC 4862 2 SC 4863 2SC 4866 2SC 4867 2SC 4868 2SC 4869 2 m B NEC 2SC3937 2SC4904 2SC3704 2SC3609 2SC4093 2SC4900 2SC3704 2SC4228 2SC4903 2SC3585 2SC4902


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    PDF 2SC4394 2SC4226 2SC49Ã 2SC3937 2SC4470 2SC3356 2SC4904 2SC3704 2SC3609 2SC4093 4892 2sc3904 2sc3828 2SC4901 2SC3585 2sc3613 2SC4928