2SC3356 Search Results

2SC3356 Price and Stock

Filter by Manufacturer


EVVO Semiconductor 2SC3356 RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3356	Digi-Reel	1,070		1	1 $0.1 10 $0.044 100 $0.0329 1000 $0.02497 10000 $0.02497	Buy Now
	2SC3356	Cut Tape	1,070		1	1 $0.1 10 $0.044 100 $0.0329 1000 $0.02497 10000 $0.02497	Buy Now
	2SC3356	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.02239	Buy Now
California Eastern Laboratories (CEL) 2SC3356-A RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3356-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC3356-T1B-R24-A RF TRANS NPN 12V 7GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3356-T1B-R24-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC3356-T1B-R25-A RF TRANS NPN 12V 7GHZ SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3356-T1B-R25-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NEC Electronics Group 2SC3356
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SC3356		8,460			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SC3356		400			1 $1.82 10 $1.82 100 $0.91 1000 $0.728 10000 $0.728	Buy Now
	2SC3356		53			1 $0.36 10 $0.36 100 $0.3 1000 $0.3 10000 $0.3	Buy Now

Find more 2SC3356 price and stock on Findchips.com

2SC3356 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3356	Kexin	NPN Silicon Epitaxial Transistor	Original	PDF
2SC3356	Micro Commercial Components	TRANS GP BJT NPN 12V 0.1A 3SOT-23	Original	PDF
2SC3356	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SC3356	NEC	Semiconductor Selection Guide	Original	PDF
2SC3356	NEC	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR	Original	PDF
2SC3356	TY Semiconductor	NPN Silicon Epitaxial Transistor - SOT-23	Original	PDF
2SC3356	California Eastern Laboratories	UHF/Microwave NPN BJT	Scan	PDF
2SC3356	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3356	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SC3356	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3356	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SC3356	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3356	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3356	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SC3356-A	CEL	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-23	Original	PDF
2SC3356A	Micro Commercial Components	TRANS GP BJT NPN 12V 0.1A 3SOT-23	Original	PDF
2SC3356B	Micro Commercial Components	TRANS GP BJT NPN 12V 0.1A 3SOT-23	Original	PDF
2SC3356C	Micro Commercial Components	TRANS GP BJT NPN 12V 0.1A 3SOT-23	Original	PDF
2SC3356-L	NEC	For amplify low noise and high frequency	Original	PDF
2SC3356Q	NEC	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-Pin Minimold	Original	PDF

2SC3356 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3356 Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS	PDF
2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356	PDF
SOT R23 Abstract: marking R24 2SC3356 SOT R25 r25 q Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR	Original	OT-23-3L OT-23-3L 2SC3356 width350s, SOT R23 marking R24 2SC3356 SOT R25 r25 q	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3	Original	2SC3356 OT-23	PDF
2SC3356-T1B-A Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz	Original	2SC3356 R09DS0021EJ0300 2SC3356 2SC3356-T1B 2SC3356-A 2SC3356-T1B-A 2SC3356 s2p	PDF
2SC3356 Application Note Abstract: 2sc3356 2SC3356R25 2SC3356 r25 Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability	Original	2SC3356 2SC3356 OT-23 2SC3356 Application Note 2SC3356R25 2SC3356 r25	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR	Original	OT-23-3L OT-23-3L 2SC3356	PDF
Untitled Abstract: No abstract text available Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES Low Noise and High Gain High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER	Original	2SC3356 OT-23 QW-R206-024	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage	Original	2SC3356 2SC3356 2SC3356L 2SC3356G 2SC3356-x-AE3-R 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R OT-23 2SC3356L-x-AE3-R QW-R206-024	PDF
2SC3356 Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.	Original	2SC3356 2SC3356 IC nec 555 transistor 1431 T marking 544 low noise amplifier	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.	Original	2SC3356 2SC3356 2SC3356L-x-AE3-R OT-23 QW-R206-024	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR	Original	OT-323 OT-323 2SC3356	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage	Original	OT-323 OT-323 2SC3356	PDF
2sc3356 Abstract: No abstract text available Text: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon 3 P b Lead Pb -Free 1 2 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2SC3356 OT-23 25-Feb-09 OT-23 2sc3356	PDF

2SC3356 s2p Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz	Original	2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356	PDF
Untitled Abstract: No abstract text available Text: 2SC3356 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10	Original	2SC3356	PDF
Untitled Abstract: No abstract text available Text: 2SC3356W High-Frequency Amplifier Transistors P b Lead Pb -Free COLLECTOR 3 3 DESCRIPTION: The 2SC3356W is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 1 BASE 1 2 2 EMITTER SOT-323(SC-70) FEATURES: * We declare that the material of product	Original	2SC3356W 2SC3356W OT-323 SC-70) 24-Jan-2013 OT-323	PDF
marking r25 Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25 Text: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain	Original	2SC3356F OT-323 01-June-2002 marking r25 transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25	PDF
SOT R23 Abstract: 2SC3356 marking R24 r25 q Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.	Original	OT-323 OT-323 2SC3356 width350s, SOT R23 2SC3356 marking R24 r25 q	PDF
transistor R24 Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23 Text: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2SC3356 OT-23-3L OT-23-3L width350s, transistor R24 SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23	PDF
2SC3356R25 Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23 Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings	Original	2SC3356 2SC3356 OT-23 2SC3356R25 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23	PDF
2SC3356 Abstract: 2SC3356 to 92 NPN R25 R24 marking DATASHEET marking r25 NPN r25 q Text: 2SC3356 SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range	Original	2SC3356 OT-23-3L 2SC3356 2SC3356 to 92 NPN R25 R24 marking DATASHEET marking r25 NPN r25 q	PDF
2SC3368 Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331 Text: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360	OCR Scan	2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 00MHz 2SC3354 O-92JÃ 2SC3368 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331	PDF
GE 2646 Abstract: 2SC3356 r25 CD/GE S 2646 Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.	OCR Scan	2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646	PDF

Privacy Settings

2SC3356 Search Results

2SC3356 Price and Stock

EVVO Semiconductor 2SC3356

California Eastern Laboratories (CEL) 2SC3356-A

California Eastern Laboratories (CEL) 2SC3356-T1B-R24-A

California Eastern Laboratories (CEL) 2SC3356-T1B-R25-A

NEC Electronics Group 2SC3356

2SC3356 Datasheets (38)

2SC3356 Datasheets Context Search

2SC3356

2SC3356 s2p

SOT R23

Untitled

2SC3356-T1B-A

2SC3356 Application Note

Untitled

Untitled

Untitled

2SC3356

Untitled

Untitled

Untitled

2sc3356

2SC3356 s2p

Untitled

Untitled

marking r25

SOT R23

transistor R24

2SC3356R25

2SC3356

2SC3368

GE 2646