Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1356 Search Results

    2SA1356 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1356 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC3419 Original PDF
    2SA1356 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1356 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1356 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1356 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1356 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1356 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1356 Unknown Cross Reference Datasheet Scan PDF
    2SA1356 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1356 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1356 Toshiba Silicon PNP transistor for audio power amplifier applications Scan PDF
    2SA1356 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SA1356 Toshiba TO-126 Package Transistor Scan PDF
    2SA1356-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1356O Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1356-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1356Y Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

    2SA1356 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3419

    Abstract: 2SC3419 2SA1356
    Text: 2SC3419 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3419 ○ 中電力増幅用 • 単位: mm : VCE (sat) = 0.25 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) • 2SA1356 とコンプリメンタリになります。


    Original     		PDF 2SC3419 2SA1356 20070701-JA C3419 2SC3419 2SA1356

    c3419

    Abstract: 2SC3419 2SA1356 MA61
    Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356


    Original     		PDF 2SC3419 2SA1356 c3419 2SC3419 2SA1356 MA61

    c3419

    Abstract: No abstract text available
    Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356


    Original     		PDF 2SC3419 2SA1356 c3419

    2SA1356

    Abstract: 2SC3419 A1356 2SA1356 A1356
    Text: 2SA1356 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1356 ○ 中電力増幅用 • 単位: mm : VCE (sat) = −0.32 V (標準) 飽和電圧が低い。 • コレクタ損失が大きい。: PC = 1.2 W (Ta = 25°C) •


    Original     		PDF 2SA1356 2SC3419 20070701-JA 2SA1356 2SC3419 A1356 2SA1356 A1356

    A1356 transistor

    Abstract: 2SA1356
    Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)


    Original     		PDF 2SA1356 2SC3419 A1356 transistor 2SA1356

    A1356 transistor

    Abstract: 2SA1356 2SA1356 A1356 2SC3419 A1356 A135
    Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)


    Original     		PDF 2SA1356 2SC3419 A1356 transistor 2SA1356 2SA1356 A1356 2SC3419 A1356 A135

    A1356 transistor

    Abstract: 2SA1356 a1356 2SC3419
    Text: 2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1356 Audio Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C)


    Original     		PDF 2SA1356 2SC3419 A1356 transistor 2SA1356 a1356 2SC3419

    c3419

    Abstract: 2SC3419 2SA1356
    Text: 2SC3419 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3419 Medium-Power Amplifier Applications. Unit: mm • Low saturation voltage: VCE (sat) = 0.25 V (typ.) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356


    Original     		PDF 2SC3419 2SA1356 c3419 2SC3419 2SA1356

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA1356

    Abstract: 2SC3419 2sc341 2SA135
    Text: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)


    OCR Scan     		PDF 2SA1356 500mA, 2SC3419 2SA1356 2sc341 2SA135

    A1356 transistor

    Abstract: A1356 2SA1356 2SC3419
    Text: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)


    OCR Scan     		PDF 2SA1356 500mA, 2SC3419 A1356 transistor A1356 2SA1356

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 356 AUDIO POWER AMPLIFIER APPLICATIONS. U nit in mm 8.3 M A X . • Low Saturation Voltage • VCE(sat)“ —0.32V (Typ.) ( I c = -5 0 0 m A , I g = -5 0 m A ) • High Collector Power Dissipation : P c = 1.2W (Ta = 25°C)


    OCR Scan     		PDF 2SA1356 2SC3419 961001EAA2'

    2SC3419

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3419 MEDIMUM POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.i±ai . Low Saturation Voltage : VcE sat =0.25V(Typ.) (Ic=500mA, •2 lB=50mA) . High Collector Power Dissipation : Pc=1.2W (Ta=25°C) . Complementary to 2SA1356


    OCR Scan     		PDF 2SC3419 500mA, 2SA1356 500mA 2SC3419

    2SA1356

    Abstract: 2SC3419
    Text: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 8.3 MAX. • • • Low Saturation Voltage : VCE(sat)“ —0.32V (Typ.) (In = -500m A, IB = -50m A) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)


    OCR Scan     		PDF 2SA1356 -500m 2SC3419 2SA1356

    A1356 transistor

    Abstract: a1356 2SA1356 2SC3419
    Text: TO S H IB A 2SA1356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 356 AUDIO PO W ER AM PLIFIER APPLICATIONS. • U n it in mm Low Satu ration V oltage : VCE(sat) = - 0 .3 2 V (Typ.) (IC = - 500m A, IB = - 50mA) • H igh Collector Pow er D issipation : P q = 1.2W (Ta = 25°C)


    OCR Scan     		PDF 2SA1356 961001EAA2' A1356 transistor a1356 2SA1356 2SC3419

    2SC3419

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3419 M E D IU M PO W ER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) = 0-25V (Typ.) (Ic = 500mA, lB = 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C) Complementary to 2SA1356


    OCR Scan     		PDF 2SC3419 500mA, 2SA1356 500mA 2SC3419

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)


    OCR Scan     		PDF 2SA1356 500mA, 2SC3419

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2SC3424

    Abstract: 80240 2SA1361
    Text: -3 5 TO-126 ( j S ) PACKAGE S E R IE S o n T0-126<JSD JZ IffH. —“ CD o (0 N ro ' in i° Application . . VCEQ Type No. v PNP NPN Audio Drive T V Chroma Out I 'V I 2SC3423 j 2SC3424 2SA1360 T V Chroma Out v 2SC3619 I 1 2SA1361 • T V Chroma Out |


    OCR Scan     		PDF O-126 2SC3423 2SC3424 2SA1360 2SA1356 20MIN 2SC3620 2SC3419 2SC3425 2SC3421 80240 2SA1361

    2SA1015

    Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
    Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^


    OCR Scan     		PDF SA1015 2SA385 2SA715 2SB941 2SB1064 2SA1015 2SA673 2SA1015 2SA1358 2SA965 2SB1212 2SB560 2SA934 2SA985 NEC 2SA1096

    2sa970

    Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
    Text: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925


    OCR Scan     		PDF 2SB675 2SB727 2SB1339 2SA1207 2SA970 2SA988 SA1127 2SA904A 2SA970 2SA1038 2SA564A 2SA906 2sa1015 2SA988 2SA1142 2sa949 2SA1038

    2SB536A

    Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
    Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ


    OCR Scan     		PDF 2SB13n7M 2SA1782 2SB1320A 2SA1561 2SA1703 2SA1426 2SA1559 2SB1242 2SB536A 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431

    C3422

    Abstract: AAAM strobo 2SC3420 2SD1508 2SD1509
    Text: Powered T O -1 26 ¡ D O CO N N tn O Application Electronic-Library •c v CEO '-/P&'V. Type No. NPN PNP Ì Audio Drive 2SC3423 ! 2SA1360 T V Chroma Out 2SC3424 ! 2SA1361 . .1 (A VcE*(sat) w VX. ;W frp g,'. •' Tc=2?C V CE >C (V) (W> (V) (A) >c (V> (A)


    OCR Scan     		PDF 2SC3420 2SD1508 2SD1509 T-33-OÃ C3422 AAAM strobo 2SC3420 2SD1509