2SA836
Abstract: Hitachi DSA002754
Text: 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline 2SA836 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage
|
Original
|
PDF
|
2SA836
2SA836
Hitachi DSA002754
|
transistor 2SA836
Abstract: 2SA836 Hitachi DSA00396
Text: 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage
|
Original
|
PDF
|
2SA836
transistor 2SA836
2SA836
Hitachi DSA00396
|
2SA836
Abstract: 2SA836CTZ 2SA836DTZ PRSS0003DA-A SC-43A
Text: 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 Previous ADE-208-316 Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings
|
Original
|
PDF
|
2SA836
REJ03G0629-0200
ADE-208-316)
PRSS0003DA-A
2SA836
2SA836CTZ
2SA836DTZ
PRSS0003DA-A
SC-43A
|
Untitled
Abstract: No abstract text available
Text: 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 Previous ADE-208-316 Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings
|
Original
|
PDF
|
2SA836
REJ03G0629-0200
ADE-208-316)
PRSS0003DA-A
|
2SA836
Abstract: Hitachi DSA0076
Text: 2SA836 Silicon PNP Epitaxial ADE-208-316 Z 1st. Edition Mar. 2001 Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
|
Original
|
PDF
|
2SA836
ADE-208-316
2SA836
Hitachi DSA0076
|
2SA836
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM: -0.1 Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range
|
Original
|
PDF
|
2SA836
-10mA,
2SA836
|
2SA836
Abstract: transistor 2SA836 VCE-12
Text: 2SA836 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.1 A Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
|
Original
|
PDF
|
2SA836
-10mA,
2SA836
transistor 2SA836
VCE-12
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA836 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z High DC Current Gain z Low Frequency Amplifier 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
PDF
|
2SA836
-10mA
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA836 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V Operating and storage junction temperature range
|
Original
|
PDF
|
2SA836
270TYP
050TYP
|
2SA836
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM: -0.1 Collector-base voltage V V(BR)CBO : -55
|
Original
|
PDF
|
2SA836
-10mA,
2SA836
|
2SA1122
Abstract: 2SA836
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
2SA836
Abstract: 2SA844
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
2SA836
Abstract: 2SA83
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
transistor 2SA836
Abstract: 2SA836 2SA844 DSA003778 Hitachi 2SA
Text: 2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage
|
Original
|
PDF
|
2SA844
transistor 2SA836
2SA836
2SA844
DSA003778
Hitachi 2SA
|
|
|
2SA1374
Abstract: Hitachi DSA0076 2SA836
Text: 2SA1374 Silicon PNP Epitaxial ADE-208-1016 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO
|
Original
|
PDF
|
2SA1374
ADE-208-1016
2SA1374
Hitachi DSA0076
2SA836
|
2SA1015
Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^
|
OCR Scan
|
PDF
|
SA1015
2SA385
2SA715
2SB941
2SB1064
2SA1015
2SA673
2SA1015
2SA1358
2SA965
2SB1212
2SB560
2SA934
2SA985 NEC
2SA1096
|
2SA836
Abstract: No abstract text available
Text: 2SA836 Silicon PNP Epitaxial HITACHI Application Low frequency low noise amplifier Outline TO-92 1 I 1. Emitter 2. Collector 3. Base 3 2 1 97 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VcBO -5 5 V Collector to emitter voltage
|
OCR Scan
|
PDF
|
2SA836
2SA836
|
s2v 92
Abstract: No abstract text available
Text: H ITACHI 2SA836 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 4.2 Max ¡>2 Max 0 5 Max t . b n ii ic r 2. CoJJector X Ba*c il» mu» {JE0EC TO-92) • ABSOLUTE MAXIMUM RATINGS Ta=23»C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SAS36 Symbol Unit
|
OCR Scan
|
PDF
|
2SA836
2SAS36
2SAS36
s2v 92
|
2SA934
Abstract: 2SA970 2sa1015 2SA953 2sa933 2sa952 2sB1064 2SA1782 2SA720 2SA836
Text: tt € S> T y p e No. Manuf. « H $ SANYO M £ TOSHIBA B 11 NEC S ÍL HITACHI * ± a FU JITSU të T MATSUSHITA □ MITSUBISHI — A ROHM 2SA 671 — '' ÍL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2 SA 672 B SL 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SAS54
|
OCR Scan
|
PDF
|
2SB507
2SB596
2SA985
2SB856
2SB941
2SB1033
2SA1782
2SA1015
2SA953
2SA836
2SA934
2SA970
2sa933
2sa952
2sB1064
2SA720
2SA836
|
2SA836
Abstract: No abstract text available
Text: HITACHI 2SA836 SILIC O N P N P EPITA XIAL LO W F R E Q U E N C Y LO W N O ISE A M P LIF IE R 1. l-im uer 2. Cullccior 3. Base Dimensions in mm (JE D E C TO-92) I A B S O L U T E MAXIMUM R A T IN G S (Ta=25°C) Item Symbol MAXIMUM C O L L E C T O R D ISSIPA T IO N
|
OCR Scan
|
PDF
|
2SA836
2SA836
|
2sa970
Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Text: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925
|
OCR Scan
|
PDF
|
2SB675
2SB727
2SB1339
2SA1207
2SA970
2SA988
SA1127
2SA904A
2SA970
2SA1038
2SA564A
2SA906
2sa1015
2SA988
2SA1142
2sa949
2SA1038
|
2sa1015
Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Text: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK
|
OCR Scan
|
PDF
|
2SA778AK
2SA1309A
2SA562
2SA673
2SA933
2SA984
2SA1015
2sa1015
2SA673
2SA935
2sa733
2SA562
564a
2SA572
2SA933
2SA953
2SA930
|
2SA1015
Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Text: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A
|
OCR Scan
|
PDF
|
2SA1358
2SA1096
2SB1086
2SA934
2SA1015
2SB1041
2SA935
2SA934
2SA854
2SA933
2SA1358
2SA1096
2SA1309A
2SA1339
|
2SB737
Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Text: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127
|
OCR Scan
|
PDF
|
2SA1015
2SA988
2SA1030
2SA1127
2SA933
2SA1209
2SA949
2SA1142
2SB648
2SA1352
2SB737
2SA978
2SA933
2sa1306
2SA933 R
2SA970
2SA1127
2SA929
|
