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    2SK30 Search Results

    2SK30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3070L-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 75A 5.8Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK3070STR-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 75A 5.8Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3054C-T1-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3060-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3054-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SK30 Price and Stock

    ROHM Semiconductor 2SK3065T100

    MOSFET N-CH 60V 2A MPT3
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    DigiKey 2SK3065T100 Digi-Reel 26,056 1
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    2SK3065T100 Cut Tape 26,056 1
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    2SK3065T100 Reel 25,000 1,000
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    Avnet Americas 2SK3065T100 Reel 18,000 21 Weeks 1,000
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    Mouser Electronics 2SK3065T100 69,438
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    Newark 2SK3065T100 Reel 1,000
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    2SK3065T100 Cut Tape 1
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    Bristol Electronics 2SK3065T100 955
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    Quest Components 2SK3065T100 800
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    TTI 2SK3065T100 Reel 1,000
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    TME 2SK3065T100 1
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    Avnet Asia 2SK3065T100 24 Weeks 1,000
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    Avnet Silica 2SK3065T100 19 Weeks 1,000
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    New Advantage Corporation 2SK3065T100 28,000 1
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    Win Source Electronics 2SK3065T100 255,000
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    ROHM Semiconductor 2SK3019TL

    MOSFET N-CH 30V 100MA EMT3
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    DigiKey 2SK3019TL Digi-Reel 11,364 1
    • 1 $0.32
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    2SK3019TL Cut Tape 11,364 1
    • 1 $0.32
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    2SK3019TL Reel 6,000 3,000
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    Newark 2SK3019TL Cut Tape 1,577 5
    • 1 $0.269
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    • 100 $0.084
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    Bristol Electronics 2SK3019TL 53,709
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    2SK3019TL 42,522 12
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    Quest Components 2SK3019TL 10,686
    • 1 $0.385
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    2SK3019TL 5,683
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    2SK3019TL 2,000
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    2SK3019TL 736
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    2SK3019TL 197
    • 1 $0.154
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    • 100 $0.0963
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    2SK3019TL 38
    • 1 $0.315
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    Ameya Holding Limited 2SK3019TL 2,485 1
    • 1 $0.3626
    • 10 $0.24304
    • 100 $0.10094
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    ComSIT USA 2SK3019TL 18,000
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    Velocity Electronics 2SK3019TL 9,000
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    Chip 1 Exchange 2SK3019TL 5,998
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    Avnet Asia 2SK3019TL 24 Weeks 3,000
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    Avnet Silica 2SK3019TL 11 Weeks 3,000
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    Chip One Stop 2SK3019TL Cut Tape 1
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    Component Electronics, Inc 2SK3019TL 2,231
    • 1 $0.38
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    • 100 $0.29
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    Micro Commercial Components 2SK3020-TP

    N-CHANNEL MOSFET,SOT-723
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    DigiKey 2SK3020-TP Digi-Reel 11,015 1
    • 1 $0.23
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    2SK3020-TP Cut Tape 11,015 1
    • 1 $0.23
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    2SK3020-TP Reel 8,000 8,000
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    Mouser Electronics 2SK3020-TP 7,554
    • 1 $0.23
    • 10 $0.141
    • 100 $0.065
    • 1000 $0.051
    • 10000 $0.035
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    Micro Commercial Components 2SK3018-TP

    MOSFET N-CH 30V 100MA SOT323
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    DigiKey 2SK3018-TP Digi-Reel 10,521 1
    • 1 $0.36
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    2SK3018-TP Cut Tape 10,521 1
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    2SK3018-TP Reel 9,000 3,000
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    Mouser Electronics 2SK3018-TP 8,251
    • 1 $0.36
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    TME 2SK3018-TP 4,955 5
    • 1 -
    • 10 $0.16
    • 100 $0.081
    • 1000 $0.072
    • 10000 $0.068
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    Micro Commercial Components 2SK3019-TP

    MOSFET N-CH 30V 100MA SOT523
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    DigiKey 2SK3019-TP Cut Tape 7,020 1
    • 1 $0.27
    • 10 $0.162
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    Mouser Electronics 2SK3019-TP 9,270
    • 1 $0.27
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    TME 2SK3019-TP 2,315 5
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    2SK30 Datasheets (456)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK30 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK30 Unknown NF, Uni, ra, Silicon N-Channel JFET Scan PDF
    2SK30 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK30 Unknown FET Data Book Scan PDF
    2SK30 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK30 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK30 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK30 Toshiba FET N Channel Scan PDF
    2SK300 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK300 Unknown FET Data Book Scan PDF
    2SK300 Sony Scan PDF
    2SK3000 Hitachi Semiconductor Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK3000 Renesas Technology Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK3000 Renesas Technology Silicon N Channel MOS FET Low Frequency Power Switching Original PDF
    2SK3000 Sanyo Semiconductor Very High Frequency Transistors / Amplifier Transistors Scan PDF
    2SK3001 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SK3002 Sanken Electric TRANS MOSFET N-CH 200V 8A 3TO-220F Original PDF
    2SK3002 Sanken Electric N-Channel MOSFET Original PDF
    ...

    2SK30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK303V4

    Abstract: 2SK303V3 2sK303L 2SK303
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES „ * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion * Halogen Free


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    2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303-V2 2SK303-V3 2SK303-V4 2SK303-V5 QW-R206-071 2SK303V4 2SK303V3 2sK303L 2SK303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK3074 630mW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


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    2SK3075 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Product specification 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


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    2SK3024 O-252 PDF

    K3090

    Abstract: 2SK3090 78hg
    Text: 2SK3090 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3090 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 16mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 26S (標準)


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    2SK3090 10VID 2-10S1B VDD24V, K3090 20070701-JA K3090 2SK3090 78hg PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.


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    2SK3018 OT-23 PDF

    MJ10050

    Abstract: 2SK3085 K3085 2-10P1B k308
    Text: 2SK3085 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3085 ○ レギュレータDC-DC コンバータ、モータドライブ用 特 • 単位: mm 長 : RDS (ON) = 1.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


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    2SK3085 O-220AB SC-46 2-10P1B MJ10050 2SK3085 K3085 2-10P1B k308 PDF

    EN8624

    Abstract: 2SK3095LS
    Text: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.


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    2SK3095LS EN8624 150described EN8624 2SK3095LS PDF

    K3050

    Abstract: 2sk3050
    Text: 2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)


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    2SK3050 K3050 K3050 2sk3050 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)


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    2SK3019 OT-523 SC-75) 03-Jun-2011 OT-523 PDF

    F16W60

    Abstract: 2SK3012 F16W60VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


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    2SK3012 F16W60VX2) 00-200V 500mJ F16W60 2SK3012 F16W60VX2 PDF

    2SK3074

    Abstract: all mosfet vhf power amplifier transistor marking zg
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C


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    2SK3074 630mW SC-62 000707EAA1 520MHz, 2SK3074 all mosfet vhf power amplifier transistor marking zg PDF

    2SK3043

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


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    2SK3043 100mJ O-220D 2SK3043 PDF

    2SK3045

    Abstract: DSA003714
    Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2


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    2SK3045 O-220D 2SK3045 DSA003714 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)


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    2SK0301 2SK301) SC-43 PDF

    2SK3034

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


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    2SK3034 2SK3034 PDF

    2SK3061

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching application.


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    2SK3061 O-220 O-220 2SK3061 PDF

    2SK3055

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3055


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    2SK3055 O-220 O-220 2SK3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3079A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.8 8 V 1. Vgs = 0.5V ∼ 1.8V 0.05V


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    2SK3079A 150mA, 250mA, 350mA, 450mA, 550mA, 650mA PDF

    2SK3099LS

    Abstract: K3099
    Text: 2SK3099LS Ordering number : EN8628 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3099LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.


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    2SK3099LS EN8628 150described 2SK3099LS K3099 PDF

    k3089

    Abstract: 2SK3089 40IDP
    Text: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.)


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    2SK3089 k3089 2SK3089 40IDP PDF

    2SA20

    Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
    Text: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


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    2SA2018 2SK3019 2SA20 "dual TRANSISTORs" resistance dual audio circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3068 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt-M O S V 2SK3068 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE TO -220FL APPLICATIONS • • • • INDUSTRIAL APPLICATIONS


    OCR Scan
    2SK3068 -220FL 20kil) --12A, --25Q PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3090 2SK3090 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX


    OCR Scan
    2SK3090 O-220FL PDF