2SA1327 Search Results

2SA1327 Datasheets (19)

Part	Manufacturer	Description	Type	PDF
2SA1327	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1327	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1327	Unknown	PNP Transistor	Scan	PDF
2SA1327	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1327	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1327	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1327	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1327	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1327	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SA1327	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SA1327	Toshiba	TO-220 Package Transistors	Scan	PDF
2SA1327A	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor	Original	PDF
2SA1327(A)	Unknown	Silicon PNP Transistor	Scan	PDF
2SA1327A	Toshiba	Silicon NPN epitaxial type transistor for strobe flash, audio power amplifier applications	Scan	PDF

2SA1327A	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	Scan	PDF
2SA1327AO	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1327AY	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1327-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1327-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2SA1327 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A1327A Abstract: 2SA1327A Text: 2SA1327A 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1327A ○ ストロボフラッシュ用 ○ 中電力増幅用単位: mm • hFE = 100~320 (VCE = −2 V, IC = −1.0 A) • hFE = 70 (最小) (VCE = −2 V, IC = −8 A)	Original	PDF	2SA1327A 2-10R1A 2SA1327A-6 20070701-JA A1327A 2SA1327A
A1327 Abstract: 2SA1327A Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)	Original	PDF	2SA1327A A1327 2SA1327A
Untitled Abstract: No abstract text available Text: JbE.rn.i~Condii.ctot L/^ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1327 DESCRIPTION • Low Collector Saturation Voltage: VcE<satr -0.5V(Max.)@lc= -8A	Original	PDF	2SA1327 O-220Fa -10mA;
A1327A Abstract: a1327 2SA1327A Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)	Original	PDF	2SA1327A A1327A a1327 2SA1327A
A1327A Abstract: No abstract text available Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)	Original	PDF	2SA1327A A1327A
2SA1327 Abstract: No abstract text available Text: JMnic Product Specification 2SA1327 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High current capacity APPLICATIONS ・Strobe flash applications ・Audio power amplifier applications PINNING	Original	PDF	2SA1327 O-220Fa 2SA1327
2SA1327 Abstract: transistor Ic 1A Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1327 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max.)@IC= -8A ·High DC Current Gain: hFE= 70(Min.)@ IC= -8A APPLICATIONS ·Strobe flash applications.	Original	PDF	2SA1327 2SA1327 transistor Ic 1A
2SA1327 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SA1327 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High current capacity · APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications	Original	PDF	2SA1327 O-220Fa 2SA1327
2SA1327 Abstract: HIGH VOLTAGE POWER PNP TRANSISTORS Text: Inchange Semiconductor Product Specification 2SA1327 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High current capacity APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications	Original	PDF	2SA1327 O-220Fa 2SA1327 HIGH VOLTAGE POWER PNP TRANSISTORS
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	PDF	VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	PDF	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
2SA1327 Abstract: No abstract text available Text: AOK AOK Semiconductor Product Spec ification 2SA1327 Silicon PNP P o w e r Transistors DESCRIPTION • W ith TO-22QFa package • L o w c o lle c to r s a tu r a tio n v o lta g e • H ig h c u rre n t c a p a c ity APPLICATIONS ¿ • S tro b e fla s h a p p lic a tio n s	OCR Scan	PDF	2SA1327 O-220Fa O-22QFa) 500nut Te-25
sb 320 toshiba audio power amplifier Abstract: No abstract text available Text: Sb TOSHIBA {D I SC RE TE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO 2SA1327 » F I S C H T E S D 0007314 0 5óC 07314' » T “"3 ^ - / 7 SILICO N PNP E P IT A X IA L TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 10L3M A X.	OCR Scan	PDF	2SA1327 10L3M sb 320 toshiba audio power amplifier
2SA1327A Abstract: No abstract text available Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr	OCR Scan	PDF	2SA1327A hpE-70 2SA1327A

2SA1327A Abstract: No abstract text available Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr	OCR Scan	PDF	2SA1327A hpE-70 2SA1327A
2SA1327A Abstract: No abstract text available Text: TO SHIBA 2SA1327A 2SA1 3 2 7 A T O SH IB A TRANSISTO R STROBE FLASH APPLICATIO NS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO PO W ER AM PLIFIER APPLICATIO NS • • • High DC Current Gain : hjPE-70 (min.) (VCE= —2V, Ic ——1A) Low Collector Saturation Voltage : VCE (sat)“ —0.5V (max.)	OCR Scan	PDF	2SA1327A hFE-70 2SA1327A
Untitled Abstract: No abstract text available Text: 2SA1327A TO SHIBA 2 SA1 3 2 7 A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 10±0.3 • • • : hjTE = 70 (min.) (VCe = —2V, IC ——1A) Low Collector Saturation Voltage : VCE (sat)= -0 .5 V (max.)	OCR Scan	PDF	2SA1327A
Untitled Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE 2SA1327 STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 1Cl3 MAX. FEATURES: . MIN. hpg of 70 at -2V, -8A . -10A Rated Collector Current . MAX. VcE sat of -0.5V . 20W at -8A Ic at 25°C Case Temperature	OCR Scan	PDF	2SA1327 -10mA,
Untitled Abstract: No abstract text available Text: 2SA1327A TOSHIBA 2SA1327A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 1Q +ÇI.3 , ^3.2 ±0.2 2.7±0.2 '\_ nr\ ( _\ n n n _ j. VUllCill V X	OCR Scan	PDF	2SA1327A a--25
2SA1327A Abstract: No abstract text available Text: T O SH IB A 2SA1327A T O S H IB A TRA N SISTO R SILICON PN P EPIT A X IA L T Y PE PCT PROCESS 2SA1 3 2 7 A STR O BE FLASH A PPLIC A TIO N S U n it in m m A UD IO P O W E R A M P L IF IE R A PPLIC A TIO N S 10 ±0.3 • H ig h DC C u rren t G a in : hjTE = 70 (m in.)	OCR Scan	PDF	2SA1327A 2SA1327A
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	PDF	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
2SA1317 Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319 Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60	OCR Scan	PDF	2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1317 2SA1348 2SC3331 2sc3345 2SC3398 2SA1319
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	PDF	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	PDF	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

2SA1327 Search Results

2SA1327 Datasheets (19)

2SA1327 Datasheets Context Search

A1327A

A1327

Untitled

A1327A

A1327A

2SA1327

2SA1327

2SA1327

2SA1327

2N7058

smd transistor h2a

2SA1327

sb 320 toshiba audio power amplifier

2SA1327A

2SA1327A

2SA1327A

Untitled

Untitled

Untitled

2SA1327A

Transistor 2SA 2SB 2SC 2SD

2SA1317

15J102

2sC5200, 2SA1943, 2sc5198