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    2SA1327A Search Results

    2SA1327A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1327A Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SA1327(A) Unknown Silicon PNP Transistor Scan PDF
    2SA1327A Toshiba Silicon NPN epitaxial type transistor for strobe flash, audio power amplifier applications Scan PDF
    2SA1327A Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SA1327AO Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1327AY Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

    2SA1327A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1327A

    Abstract: 2SA1327A
    Text: 2SA1327A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1327A ○ ストロボフラッシュ用 ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −1.0 A) • hFE = 70 (最小) (VCE = −2 V, IC = −8 A)


    Original     		PDF 2SA1327A 2-10R1A 2SA1327A-6 20070701-JA A1327A 2SA1327A

    A1327

    Abstract: 2SA1327A
    Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)


    Original     		PDF 2SA1327A A1327 2SA1327A

    A1327A

    Abstract: a1327 2SA1327A
    Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)


    Original     		PDF 2SA1327A A1327A a1327 2SA1327A

    A1327A

    Abstract: No abstract text available
    Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)


    Original     		PDF 2SA1327A A1327A

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		PDF 2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    2SA1327A

    Abstract: No abstract text available
    Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr


    OCR Scan     		PDF 2SA1327A hpE-70 2SA1327A

    2SA1327A

    Abstract: No abstract text available
    Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr


    OCR Scan     		PDF 2SA1327A hpE-70 2SA1327A

    2SA1327A

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1327A 2SA1 3 2 7 A T O SH IB A TRANSISTO R STROBE FLASH APPLICATIO NS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO PO W ER AM PLIFIER APPLICATIO NS • • • High DC Current Gain : hjPE-70 (min.) (VCE= —2V, Ic ——1A) Low Collector Saturation Voltage : VCE (sat)“ —0.5V (max.)


    OCR Scan     		PDF 2SA1327A hFE-70 2SA1327A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1327A TO SHIBA 2 SA1 3 2 7 A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 10±0.3 • • • : hjTE = 70 (min.) (VCe = —2V, IC ——1A) Low Collector Saturation Voltage : VCE (sat)= -0 .5 V (max.)


    OCR Scan     		PDF 2SA1327A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1327A TOSHIBA 2SA1327A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 1Q +ÇI.3 , ^3.2 ±0.2 2.7±0.2 '\_ nr\ ( _\ n n n _ j. VUllCill V X


    OCR Scan     		PDF 2SA1327A a--25

    2SA1327A

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1327A T O S H IB A TRA N SISTO R SILICON PN P EPIT A X IA L T Y PE PCT PROCESS 2SA1 3 2 7 A STR O BE FLASH A PPLIC A TIO N S U n it in m m A UD IO P O W E R A M P L IF IE R A PPLIC A TIO N S 10 ±0.3 • H ig h DC C u rren t G a in : hjTE = 70 (m in.)


    OCR Scan     		PDF 2SA1327A 2SA1327A