2SA1327A Search Results

2SA1327A Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1327A	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor	Original	PDF
2SA1327(A)	Unknown	Silicon PNP Transistor	Scan	PDF
2SA1327A	Toshiba	Silicon NPN epitaxial type transistor for strobe flash, audio power amplifier applications	Scan	PDF
2SA1327A	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	Scan	PDF
2SA1327AO	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF
2SA1327AY	Toshiba	Silicon PNP Epitaxial Type Transistor	Scan	PDF

2SA1327A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A1327A Abstract: 2SA1327A Text: 2SA1327A 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1327A ○ ストロボフラッシュ用 ○ 中電力増幅用単位: mm • hFE = 100~320 (VCE = −2 V, IC = −1.0 A) • hFE = 70 (最小) (VCE = −2 V, IC = −8 A)	Original	2SA1327A 2-10R1A 2SA1327A-6 20070701-JA A1327A 2SA1327A	PDF
A1327 Abstract: 2SA1327A Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)	Original	2SA1327A A1327 2SA1327A	PDF
A1327A Abstract: a1327 2SA1327A Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)	Original	2SA1327A A1327A a1327 2SA1327A	PDF
A1327A Abstract: No abstract text available Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)	Original	2SA1327A A1327A	PDF
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
2SC4793 2sa1837 Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y	Original	2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor	PDF

2sc5088 horizontal transistors Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.	Original	BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a	PDF
2SA1327A Abstract: No abstract text available Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr	OCR Scan	2SA1327A hpE-70 2SA1327A	PDF
2SA1327A Abstract: No abstract text available Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr	OCR Scan	2SA1327A hpE-70 2SA1327A	PDF
2SA1327A Abstract: No abstract text available Text: TO SHIBA 2SA1327A 2SA1 3 2 7 A T O SH IB A TRANSISTO R STROBE FLASH APPLICATIO NS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO PO W ER AM PLIFIER APPLICATIO NS • • • High DC Current Gain : hjPE-70 (min.) (VCE= —2V, Ic ——1A) Low Collector Saturation Voltage : VCE (sat)“ —0.5V (max.)	OCR Scan	2SA1327A hFE-70 2SA1327A	PDF
Untitled Abstract: No abstract text available Text: 2SA1327A TO SHIBA 2 SA1 3 2 7 A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 10±0.3 • • • : hjTE = 70 (min.) (VCe = —2V, IC ——1A) Low Collector Saturation Voltage : VCE (sat)= -0 .5 V (max.)	OCR Scan	2SA1327A	PDF
Untitled Abstract: No abstract text available Text: 2SA1327A TOSHIBA 2SA1327A TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS 1Q +ÇI.3 , ^3.2 ±0.2 2.7±0.2 '\_ nr\ ( _\ n n n _ j. VUllCill V X	OCR Scan	2SA1327A a--25	PDF
2SA1327A Abstract: No abstract text available Text: T O SH IB A 2SA1327A T O S H IB A TRA N SISTO R SILICON PN P EPIT A X IA L T Y PE PCT PROCESS 2SA1 3 2 7 A STR O BE FLASH A PPLIC A TIO N S U n it in m m A UD IO P O W E R A M P L IF IE R A PPLIC A TIO N S 10 ±0.3 • H ig h DC C u rren t G a in : hjTE = 70 (m in.)	OCR Scan	2SA1327A 2SA1327A	PDF

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2SA1327A Search Results

2SA1327A Datasheets (6)

2SA1327A Datasheets Context Search

A1327A

A1327

A1327A

A1327A

2N7058

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2sC5200, 2SA1943

2SA1930 2sc5171

GT45F122

GT30J124

2SC4793 2sa1837

2sc5088 horizontal transistors

2SA1327A

2SA1327A

2SA1327A

Untitled

Untitled

2SA1327A