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    Microchip Technology Inc 2N5601

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    2N5601 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5601 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=2 / Hfe=70-200 / fT(Hz)=50M / Pwr(W)=20 Original PDF
    2N5601 API Electronics Short form transistor data Short Form PDF
    2N5601 API Electronics 5 Amps PNP Transistors Scan PDF
    2N5601 API Electronics 5 AMPS PNP Transistors Scan PDF
    2N5601 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5601 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5601 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5601 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5601 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5601 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5601 PPC Products Transistor Short Form Data Scan PDF
    2N5601 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N5601 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5601

    Abstract: 2N5597 2N5599 2N5603
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5597

    Abstract: 2N5601 2N5599 2N5603
    Text: Inchange Semiconductor Product Specification 2N5597 2N5599 2N5601 2N5603 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5597

    Abstract: 2N5599 2N5601 2N5603
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    Untitled

    Abstract: No abstract text available
    Text: 2N5601 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N5601 O213AA) 30-Jul-02

    2N5601

    Abstract: No abstract text available
    Text: 2N5601 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N5601 O213AA) 1-Aug-02 2N5601

    2N3775

    Abstract: 2N3202 2N3203
    Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203


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    PDF QDDD10S 2N3202 2N3203 2N3204 2N3719 2N3720 2N3775 2N3776 2N3777 2N3778

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


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    PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    b0348

    Abstract: 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 SML69503 SML69511 SML69603 SML69611 SML3503 SML3507 SML3511 SML3515 ~b~~~~4 25 30 SOT3554 SOT3554 B0638 SOT3551 SOT3551 SOT3551 SOT3577 SOT3577 ~~:g77 35 40 BLX40 BLX40 SOT69503 SOT69503 SOT69603 SOT69603


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    PDF ZTX751 B0378-25 BSS17 2N5322 NS06180 2N6181 SK3179 SML3551 b0348 2N5333 motorola B0238 SGS-Ates SML3511 NSOU56 2N5322 motorola B0818 MPS-U56 mpsu56

    2N2891

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


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    PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891

    2S721

    Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .


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    PDF ST450 2S013 2N2383 2S721 2S723 2N3138 bdy11 TO53 to-53 TO5-3 KT932A SDT5913

    Untitled

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER ELECTRONICS SPACE POWER ELECTRONICS , J " D -o/ 89C 00104 ST D E I A4403S5 ••DD1D4 1 30W@T =100°C C FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T Breakdown Voltages TYPE CASE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026


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    PDF A4403S5 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3163 2N3164 2N3165

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N5286

    Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
    Text: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204


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    PDF 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N5286 2N3196 2n5601 TO111 package

    JAN2N3996

    Abstract: 2N4307 ISM22 2n3183
    Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100


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    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    N5408

    Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384
    Text: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153


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    PDF 2N5153 2N5286 O-111-I 2N5287 2N5333 2N5384 O-111-1 2IM5404 2IM5405 N5408 SDT3324 N5404 2N5609 2n5601

    2N5287

    Abstract: 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5322 2N5323 2N5333
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRE A K D O V SAT V O L T A GES M e X. h FE V( D L TAG E S PNP CASE V CE V EB (V) >C (A) M in . Max. 'c (A) 'b (A) V CE (V) V BE V CB 2N5287 TO-59/I 120 100 5.5 5 2.5 70 20 0 2.5 0.5 1.5 Z. 2N 5290 T O -61/1


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    PDF 2N5287 O-59/I 2N5290 O-61/1 2N5291 2N5312 2N5314 2N5316 2N5318 2N5322 2N5323 2N5333

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


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    PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    2N3173

    Abstract: 2N3171 2N3172 2N3198 2N3185 2N5408 TO111 package 2N3174 2N3184 2N3183
    Text: E s n E, LEC TR O N IC S, IN C . 1-13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204


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    PDF 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3198 2N3185 2N5408 TO111 package

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    JANS2N3741

    Abstract: ne 545 d
    Text: Microsemi PNP Transistors : P a cka g e O u tlin e M il i Data Spec Sheet : ID PD iC V c b o V c e o V e b o V C E sat @ IC <w> (A) (V) (V) (V) (V) (m A ) HFE m in (dB ) -5 100 80 5.5 1.5 2.5 70 200 23776 11.8 11.8 -5 100 80 5.5 1.5 2.5 30 90 545 23781 11.8


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