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    25N80C Search Results

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    25N80C Price and Stock

    IXYS Corporation IXKR25N80C

    MOSFET N-CH 800V 25A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKR25N80C Tube 30
    • 1 -
    • 10 -
    • 100 $20.88033
    • 1000 $20.88033
    • 10000 $20.88033
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    Mouser Electronics IXKR25N80C
    • 1 $25.18
    • 10 $22.37
    • 100 $20.87
    • 1000 $20.87
    • 10000 $20.87
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    TME IXKR25N80C 1
    • 1 $28.21
    • 10 $22.4
    • 100 $20.14
    • 1000 $20.14
    • 10000 $20.14
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    IXYS Corporation IXKG25N80C

    MOSFET N-CH 800V 25A ISO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXKG25N80C Tube
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    IXYS Corporation IXKC25N80C

    Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IXKC25N80C 1
    • 1 $12.71
    • 10 $9.05
    • 100 $9.05
    • 1000 $9.05
    • 10000 $9.05
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    25N80C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CoolMOS Power Transistor

    Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C E153432 065B1 728B1 123B1 CoolMOS Power Transistor POWER MOSFET 4600 UPS SIEMENS 25N80C

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF ISOPLUS220TM 25N80C ISOPLUS220LV 728B1 065B1 123B1

    25N80C

    Abstract: No abstract text available
    Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions


    Original     		PDF 25N80C ISOPLUS220 E72873 25N80C

    IXKR25N80C

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432


    Original     		PDF 25N80C 125mW 247TM ISOPLUS247TM E153432 ISOPLUS247 O-247 IXKR25N80C

    CoolMOS Power Transistor

    Abstract: ISOPLUS247 IXKR25N80C
    Text: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432


    Original     		PDF ISOPLUS247TM 25N80C 247TM E153432 CoolMOS Power Transistor ISOPLUS247 IXKR25N80C

    power switching

    Abstract: ISO264 ISO264TM ID90
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20


    Original     		PDF 25N80C ISO264TM 728B1 065B1 123B1 power switching ISO264 ISO264TM ID90

    25N80C

    Abstract: 25n80 E72873 mosfet b4
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 20080526a 25N80C 25n80 E72873 mosfet b4

    25N80C

    Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432


    Original     		PDF 25N80C 125mW ISOPLUS247TM 247TM E153432 20080526a 25N80C "VDSS 800V" mosfet ISOPLUS247 25n80

    25n8

    Abstract: No abstract text available
    Text: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features


    Original     		PDF 25N80C ISOPLUS220 E72873 0080526a 20080526a 25n8

    Untitled

    Abstract: No abstract text available
    Text: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432


    Original     		PDF 25N80C ISOPLUS247â E153432 20080526a

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous


    Original     		PDF ISOPLUS220TM 25N80C 220TM

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous


    Original     		PDF ISOPLUS220TM 25N80C 25VDS 728B1 065B1 123B1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D