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    75N60 Search Results

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    75N60 Price and Stock

    Vishay Siliconix SIHK075N60E-T1-GE3

    E SERIES POWER MOSFET POWERPAK 1
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    DigiKey SIHK075N60E-T1-GE3 Reel 2,000 2,000
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    • 10000 $3.29383
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    SIHK075N60E-T1-GE3 Cut Tape 25 1
    • 1 $6.72
    • 10 $4.754
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    Vishay Siliconix SIHK075N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST
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    DigiKey SIHK075N60EF-T1GE3 Reel 2,000 2,000
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    SIHK075N60EF-T1GE3 Cut Tape 26 1
    • 1 $7.51
    • 10 $5.34
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    Infineon Technologies AG IGW75N60TFKSA1

    IGBT TRENCH FS 600V 150A TO247-3
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    DigiKey IGW75N60TFKSA1 Tube 775 1
    • 1 $6.39
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    Mouser Electronics IGW75N60TFKSA1 410
    • 1 $5.44
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    TME IGW75N60TFKSA1 1
    • 1 $5.48
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    Chip1Stop IGW75N60TFKSA1 Tube 468
    • 1 $5.22
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    EBV Elektronik IGW75N60TFKSA1 20 Weeks 240
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    Rochester Electronics LLC NGTB75N60SWG

    IGBT 600V 100A TO247-3
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    DigiKey NGTB75N60SWG Tube 674 80
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    IXYS Corporation IXKN75N60C

    MOSFET N-CH 600V 75A SOT-227B
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    DigiKey IXKN75N60C Tube 564 1
    • 1 $62.17
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    Mouser Electronics IXKN75N60C 140
    • 1 $62.17
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    Newark IXKN75N60C Bulk 1
    • 1 $78.92
    • 10 $70.72
    • 100 $60.38
    • 1000 $58.65
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    TME IXKN75N60C 1
    • 1 $72.15
    • 10 $61.29
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    Find more 75N60 price and stock on Findchips.com

    75N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-227 heatsink

    Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
    Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


    Original     		PDF 75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions

    75N60C

    Abstract: No abstract text available
    Text: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C


    Original     		PDF 75N60C OT-227 75N60C

    Untitled

    Abstract: No abstract text available
    Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source


    Original     		PDF 75N60C OT-227 20100609c

    75n60

    Abstract: 1/igbt 75n60
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60 VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B


    Original     		PDF 75N60 OT-227 E72873 75n60 1/igbt 75n60

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 75N60BD1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		PDF ISOPLUS-264TM 75N60BU1 728B1

    20n60c

    Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
    Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:


    Original     		PDF 20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c

    75n60

    Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
    Text: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved


    Original     		PDF ISOPLUS247TM 40N60C 40N60 75N60 OT-227 E72873 75n60 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c

    "SOT-227 B" dimensions

    Abstract: 75N60 sot-227
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S


    Original     		PDF 75N60C OT-227 E72873 "SOT-227 B" dimensions 75N60 sot-227

    75n60

    Abstract: M4x8 UPS SIEMENS C160 ID100
    Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source


    Original     		PDF 75N60C OT-227 20100609c 75n60 M4x8 UPS SIEMENS C160 ID100

    IXKN75N60C

    Abstract: 75n60 E72873
    Text: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt


    Original     		PDF 75N60C OT-227 E72873 IXKN75N60C IXKN75N60C 75n60 E72873

    75n60

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode Symbol Test Conditions IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 75N60BD1 75n60

    75N60C

    Abstract: 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink
    Text: IXKN 75N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 75 A 36 mΩ Ω miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source


    Original     		PDF 75N60C OT-227 20080523a 75N60C 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    75n60

    Abstract: No abstract text available
    Text: 75N60FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		PDF NGTB75N60FL2WG NGTB75N60FL2W/D 75n60

    TC1724

    Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784
    Text: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D