SOT-227 heatsink

Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
Contextual Info: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90

75N60C

Contextual Info: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C

Contextual Info: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source

75n60

Abstract: 1/igbt 75n60
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60 VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V

20n60c

Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
Contextual Info: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:

75n60

Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
Contextual Info: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved

"SOT-227 B" dimensions

Abstract: 75N60 sot-227
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S

75n60

Abstract: M4x8 UPS SIEMENS C160 ID100
Contextual Info: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source

IXKN75N60C

Abstract: 75n60 E72873
Contextual Info: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt

75n60

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode Symbol Test Conditions IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

75N60C

Abstract: 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink
Contextual Info: IXKN 75N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 75 A 36 mΩ Ω miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

75n60

Contextual Info: 75N60FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

TC1724

Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784
Contextual Info: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions

100N055

Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06