SOT-227 heatsink
Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90
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75N60C
OT-227
E72873
SOT-227 heatsink
75n60
SOT-227 Package
335AB
E72873
"SOT-227 B" dimensions
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DA QG
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V = 25 mW 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25
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75-01F
75-01F
DA QG
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transistor da 307
Abstract: 24N10
Text: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet RDSon = 390 mW in High Voltage ISOPLUS I4-PACTM 1 5 Features MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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24N100
24N100
transistor da 307
24N10
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Untitled
Abstract: No abstract text available
Text: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C
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24N100
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75N60C
Abstract: No abstract text available
Text: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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75N60C
OT-227
75N60C
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IR power mosfet switching power supply
Abstract: Welding topologies
Text: FMD 21-05QC ID25 = 21 A = 500 V VDSS Ω RDSon typ. = 190 mΩ Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM 3 Preliminary data 1 4 1 5 2 Features Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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21-05QC
E72873
IR power mosfet switching power supply
Welding topologies
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power Mosfet FMK 75-01F ID25 VDSS RDSon -Common Source Topologyin ISOPLUS i4-PACTM = 75 A = 100 V Ω = 25 mΩ 4 5 3 1 1 5 2 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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75-01F
75-01F
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V Ω = 25 mΩ 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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75-01F
75-01F
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet Ω RDSon = 390 mΩ in High Voltage ISOPLUS i4-PACTM 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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24N100
24N100
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power Mosfet FMM 75-01F ID25 VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 75 A = 100 V Ω = 25 mΩ 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C
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75-01F
75-01F
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chopper transformer
Abstract: 6035a
Text: Advanced Technical Information HiPerFETTM Power Mosfets FMD 21-05QC ID25 = 21 A FDM 21-05QC VDSS = 500 V RDSon = 220 mW -Chopper Topologiesin ISOPLUS i4-PACTM 1 5 FMD FDM MOSFET Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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21-05QC
chopper transformer
6035a
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Untitled
Abstract: No abstract text available
Text: FMK 75-01F HiPerFETTM Power MOSFET ID25 = 75 A = 100 V VDSS Ω RDSon typ. = 18 mΩ Common Source Topology in ISOPLUS i4-PACTM 3 Preliminary data 5 T1 4 1 1 T2 2 5 Features MOSFET T1/T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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75-01F
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Untitled
Abstract: No abstract text available
Text: FMK 75-01F HiPerFETTM Power MOSFET ID25 = 75 A = 100 V VDSS Ω RDSon typ. = 18 mΩ Common Source Topology in ISOPLUS i4-PACTM 3 Preliminary data 5 T1 4 1 1 T2 2 5 Features MOSFET T1/T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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75-01F
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40N60C
Abstract: CoolMOS E72873 Ixkn 40n60 E72873 SOT-227
Text: IXKN 40N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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40N60C
OT-227
E72873
40N60C
CoolMOS
E72873
Ixkn
40n60
E72873 SOT-227
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Untitled
Abstract: No abstract text available
Text: FMM 65-015P ID25 = 65 A = 150 V VDSS Ω RDSon typ. = 12 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data 5 T1 4 1 1 T2 2 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 150 V ±20 V ID25 ID90
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65-015P
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Untitled
Abstract: No abstract text available
Text: FMM 150-0075P ID25 = 150 A = 75 V VDSS Ω RDS on typ = 3.2 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 T1 5 1 4 1 T2 5 2 Features MOSFET T1/T2 Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 75 V ±20 V ID25 ID90 TC = 25°C
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150-0075P
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Untitled
Abstract: No abstract text available
Text: IXKN 40N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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40N60C
OT-227
E72873
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chopper transformer
Abstract: No abstract text available
Text: FMD 40-06KC Advanced Technical Information HiPerFETTM Power MOSFETs ID25 = 38 A VDSS = 600 V Ω RDSon = 60 mΩ -Boost Chopper Topologyin ISOPLUS i4-PACTM 3 4 1 1 5 2 Features Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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40-06KC
chopper transformer
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"SOT-227 B" dimensions
Abstract: ks fuses
Text: IXUN 280N10 Advanced Technical Information VDSS = 100 V ID25 = 280 A Ω typ. RDS(on) = 3.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D Maximum Ratings TJ = 25°C to 150°C VGS VGSM Continuous Transient ID25 ID90 TC = 25°C
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280N10
OT-227
"SOT-227 B" dimensions
ks fuses
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Untitled
Abstract: No abstract text available
Text: FMD 80-0045PS ID25 = 100 A = 55 V VDSS Ω RDSon typ. = 3.8 mΩ Boost Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM 3 Preliminary data 4 1 1 5 2 Features Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90
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80-0045PS
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Untitled
Abstract: No abstract text available
Text: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 55 V ±20 V ID25 ID90
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300-0055P
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D-68623
Abstract: No abstract text available
Text: FMD 80-0045PS ID25 = 100 A = 55 V VDSS Ω RDSon typ. = 3.8 mΩ Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM 3 Preliminary data 4 1 1 5 2 Features Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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80-0045PS
D-68623
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Untitled
Abstract: No abstract text available
Text: FMK 75-01F HiPerFETTM Power MOSFET ID25 = 75 A = 100 V VDSS Ω RDSon typ. = 18 mΩ Common Source Topology in ISOPLUS i4-PACTM 4 Preliminary data 5 T1 3 1 1 T2 2 5 Features MOSFET T1/T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C
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75-01F
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IXKN75N60C
Abstract: 75n60 E72873
Text: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt
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75N60C
OT-227
E72873
IXKN75N60C
IXKN75N60C
75n60
E72873
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