DSEE8-08CC
Abstract: 10P40
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
DSEE8-08CC
10P40
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80N085
Abstract: No abstract text available
Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80N085
ISOPLUS220TM
405B2
80N085
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Untitled
Abstract: No abstract text available
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface Symbol Test Conditions ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous
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ISOPLUS220TM
60N10
728B1
065B1
123B1
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80N085
ISOPLUS220TM
405B2
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Untitled
Abstract: No abstract text available
Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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ISOPLUS220TM
25N80C
ISOPLUS220LV
728B1
065B1
123B1
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80N10
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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80N10
ISOPLUS220TM
728B1
123B1
728B1
065B1
80N10
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Untitled
Abstract: No abstract text available
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRM¦ VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; t p = 10 ms 50 Hz , sine
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8-08CC
ISOPLUS220TM
220LVTM
10P400PJ
DS99053
DSEE8-08CC
ISOPLUS220LV
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Untitled
Abstract: No abstract text available
Text: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Symbol Conditions Maximum Ratings TC = 130°C; rectangular, d = 0.5
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8-08CC
ISOPLUS220TM
220LVTM
DS99053
DSEE8-08CC
ISOPLUS220LV
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80N08
Abstract: 80N085 4800 mosfet
Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 11 mΩ Ω Ω 80 A 11 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions
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ISOPLUS220TM
80N08
80N085
728B1
123B1
728B1
065B1
80N08
80N085
4800 mosfet
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80N08
Abstract: 80N085
Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions
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ISOPLUS220TM
80N08
80N085
728B1
123B1
728B1
065B1
80N08
80N085
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