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    60N10 Search Results

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    60N10 Price and Stock

    STMicroelectronics ECMF4-2450A60N10

    CMC 100MA 4LN SMD
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    DigiKey ECMF4-2450A60N10 Cut Tape 31,716 1
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    ECMF4-2450A60N10 Digi-Reel 31,716 1
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    ECMF4-2450A60N10 Reel 24,000 3,000
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    Avnet Americas ECMF4-2450A60N10 Reel 24,000 13 Weeks 3,000
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    Mouser Electronics ECMF4-2450A60N10 18,427
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    Newark ECMF4-2450A60N10 Cut Tape 2,682 1
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    STMicroelectronics ECMF4-2450A60N10 18,427 1
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    Avnet Silica ECMF4-2450A60N10 14 Weeks 3,000
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    EBV Elektronik ECMF4-2450A60N10 14 Weeks 3,000
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    Micro Commercial Components MCAC60N10Y-TP

    MOSFET N-CH 100 60A DFN5060
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    DigiKey MCAC60N10Y-TP Cut Tape 16,065 1
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    MCAC60N10Y-TP Digi-Reel 16,065 1
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    MCAC60N10Y-TP Reel 10,000 5,000
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    Infineon Technologies AG IPD60N10S412ATMA1

    MOSFET N-CH 100V 60A TO252-3
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    DigiKey IPD60N10S412ATMA1 Cut Tape 5,741 1
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    IPD60N10S412ATMA1 Digi-Reel 5,741 1
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    IPD60N10S412ATMA1 Reel 2,500 2,500
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    Avnet Americas IPD60N10S412ATMA1 Reel 12 Weeks 2,500
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    Mouser Electronics IPD60N10S412ATMA1 4,163
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    Newark IPD60N10S412ATMA1 Cut Tape 4,482 1
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    Rochester Electronics IPD60N10S412ATMA1 2,338 1
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    Chip1Stop IPD60N10S412ATMA1 Cut Tape 2,495
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    EBV Elektronik IPD60N10S412ATMA1 13 Weeks 2,500
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    onsemi FDBL0260N100

    MOSFET N-CH 100V 200A 8HPSOF
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    DigiKey FDBL0260N100 Cut Tape 3,815 1
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    FDBL0260N100 Digi-Reel 3,815 1
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    FDBL0260N100 Reel 2,000 2,000
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    Avnet Americas FDBL0260N100 Reel 22 Weeks 2,000
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    Mouser Electronics FDBL0260N100 1,082
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    Newark FDBL0260N100 Cut Tape 1,858 1
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    Rochester Electronics FDBL0260N100 11,223 1
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    Ameya Holding Limited FDBL0260N100 6,920
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    Richardson RFPD FDBL0260N100 2,000
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    Avnet Silica FDBL0260N100 23 Weeks 2,000
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    EBV Elektronik FDBL0260N100 2,000 24 Weeks 2,000
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    New Advantage Corporation FDBL0260N100 2,000 1
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    Micro Commercial Components MCBS260N10YHE3-TP

    N-CHANNEL MOSFET,TO-263-7
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    DigiKey MCBS260N10YHE3-TP Digi-Reel 1,600 1
    • 1 $7.35
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    MCBS260N10YHE3-TP Cut Tape 1,600 1
    • 1 $7.35
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    Mouser Electronics MCBS260N10YHE3-TP 800
    • 1 $6.56
    • 10 $5.51
    • 100 $4.46
    • 1000 $3.39
    • 10000 $3.06
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    Find more 60N10 price and stock on Findchips.com

    60N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60n10

    Abstract: IXTH60N10
    Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		PDF 60N10 TJM15 O-268 728B1 123B1 728B1 065B1 60n10 IXTH60N10

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface Symbol Test Conditions ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous


    Original     		PDF ISOPLUS220TM 60N10 728B1 065B1 123B1

    60N10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220LVTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous


    Original     		PDF 60N10 ISOPLUS220TM 220LVTM 728B1 065B1 123B1 60N10

    60n10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous


    Original     		PDF 60N10 ISOPLUS220TM 220TM 728B1 065B1 123B1 60n10

    60n10

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous


    Original     		PDF 60N10 ISOPLUS220TM 220TM 728B1 60n10

    IGBT/MOSFET Gate Drive

    Abstract: OMD32F60ML OMD38L60ML OMD60N10ML OMD75N06ML
    Text: OMD38L60ML Preliminary Data Sheet OMD75N06ML 60N10ML OMD32F60ML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules With Internal Gate Drive, 3-Phase Bridge Configuration FEATURES • • • • •


    Original     		PDF OMD75N06ML OMD38L60ML OMD60N10ML OMD32F60ML IGBT/MOSFET Gate Drive OMD32F60ML OMD38L60ML

    70N10

    Abstract: 60N10 JESD97 STD60N10 STP70N10
    Text: 60N10 STP70N10 N-channel 100 V - 0.016 Ω - 60 A TO-220 / DPAK low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)max ID 60N10 100 V <0.0195 Ω 60 A STP70N10 100 V <0.0195 Ω 65 A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)


    Original     		PDF STD60N10 STP70N10 O-220 O-220 70N10 70N10 60N10 JESD97 STD60N10 STP70N10

    OM55N10NK

    Abstract: OM60N10NK OM75N05NK OM75N06NK
    Text: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 60N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener protected SuperMESH 5 Power MOSFET in a ISOTOP package Datasheet — preliminary data Features Oreder code VDSS 60N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area


    Original     		PDF STE60N105DK5 STE60N105DK5

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    55n10

    Abstract: 75n05 60n10 75N06SA 75n06 OM55N10SA OM55N10SC OM60N10SC OM75N05SA OM75N05SC
    Text: OM55N10SC 60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •


    Original     		PDF OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA O-254 O-258 MIL-S-19500, 55n10 75n05 60n10 75N06SA 75n06

    Untitled

    Abstract: No abstract text available
    Text: 60N10F7 N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max ID PTOT 60N10F7 100 V 0.018 Ω 12 A 5W 2 3 • Ultra low on-resistance


    Original     		PDF STL60N10F7 DocID024453

    SSH60N06

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b4E ]> 7^4142 SSH60N06/60N10 FEATURES • • • • • • • • GG 15 4b S 45b « S M Ò K N-CHANNEL POWER MOSFETS TO-3P Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF SSH60N06/60N10 O-220 SSH60N06 SSH60N1 SSH60N10 SSM60N06/60N10 SSH60N06

    60n10

    Abstract: ssm60n06 SSH60N06
    Text: N-CHANNEL POWER MOSFETS SSH60N06/60N10 FEATURES TO-3P • L o w e r R d s ON • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF SSH60N06/60N10 O-220 SSH60N06 SSH60N10 06/60N 60n10 ssm60n06 SSH60N06

    Untitled

    Abstract: No abstract text available
    Text: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id


    OCR Scan     		PDF 10/FI STH60N1OFI 60N10 7T2T537 04STL STH60N10/FISTW60N10

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: OM55N1ÛNK OM75N05NK 60N10NK OM75NQ6NK LOW VOLTAGE, LOW R DS on POWER MOSFETS IN A TO-3 PACKAGE 50V And 60V, Ultra Low RDS(on) Power MOSFETs In A TO-3 Package FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge


    OCR Scan     		PDF OM55N1Ã OM75N05NK OM60N10NK OM75NQ6NK MIL-S-19500,

    Untitled

    Abstract: No abstract text available
    Text: P relim inary Data Sheet OMS75NÛ6ML OMS38L60ML OMS6ONIOML OMS32F60ML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 A m p M od ul es, 3 - P h a s e Bridge Conf igu ra tio n FEATURES • • • • • Isolated Heat Sink


    OCR Scan     		PDF OMS75N OMS38L60ML OMS32F60ML OMS75N06ML QMS32F60ML 75N06ML 60N10ML 38L60ML 32F60ML

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    Untitled

    Abstract: No abstract text available
    Text: OM55N10NK OM75N05NK OM6ONIONK OM75N06NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE R DS on POWER MOSFETS FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low R DS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TX V And S Levels


    OCR Scan     		PDF OM55N10NK OM75N05NK OM75N06NK MIL-S-19500, 55N10NK 60N10NK 75N06NK 75N05NK 025rom

    qe rts diode

    Abstract: 60N10
    Text: Preliminary Data Sheet OMS75N06ML OMS38L60ML OMS6ONIOML OMS32F6QML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt. 25 To 75 Amp Modules. 3-Phase Bridge Configuration FEATURES • • • • • Isolated Heat Sink Low Inductance Design


    OCR Scan     		PDF OMS75N06ML OMS38L60ML OMS32F6QML OMS75N06M 0MS32F6QML 75N06ML 60N10ML 38L60ML 32F60ML qe rts diode 60N10

    55n10

    Abstract: No abstract text available
    Text: OM55N1ÛSC 60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA LOW VOLTAGE, LOW R DS 0n POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V. A n d 1 00 V Ultra L o w RDS(on) P o w e r M O S F E T s In T O -2 54 A n d T O-258 Isolated P a c k a g e s


    OCR Scan     		PDF OM55N1 OM60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA O-258 MIL-S-19500, 55n10

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan     		PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D