power switching
Abstract: ISO264 ISO264TM ID90
Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20
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25N80C
ISO264TM
728B1
065B1
123B1
power switching
ISO264
ISO264TM
ID90
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IXFG 55N50
Abstract: ISO264 ISO264TM IXFK55N50 55N50
Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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55N50
ISOPLUS247TM
ISO264TM
ISO264
IXFK55N50
728B1
123B1
728B1
065B1
IXFG 55N50
ISO264TM
55N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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Original
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PDF
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55N50
ISOPLUS247TM
ISO264
IXFK55N50
728B1
123B1
728B1
065B1
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