25N10 Search Results

25N10 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
G825N10201DEU		Amphenol Communications Solutions	Pin Header 2.0mm Pitch Rightangle Surfacemount, 1x10Pin, MATTE TIN, LCP, 3.2mm2.0mm2.8mm, T&R, CAP

25N10 Price and Stock

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TTM Technologies BD2425N100ATI BALUN 2.3GHZ-2.6GHZ 0404
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BD2425N100ATI	Digi-Reel	24,000		1	1 $0.98 10 $0.652 100 $0.4606 1000 $0.34986 10000 $0.34986	Buy Now
	BD2425N100ATI	Cut Tape	24,000		1	1 $0.98 10 $0.652 100 $0.4606 1000 $0.34986 10000 $0.34986	Buy Now
Richardson RFPD	BD2425N100ATI		150		1	1 $0.82 10 $0.69 100 $0.54 1000 $0.49 10000 $0.45	Buy Now
	BD2425N100ATI				4,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Micro Commercial Components MCAC25N10YHE3-TP MOSFET N-CH 100 25A DFN5060
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCAC25N10YHE3-TP	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.3405	Buy Now
	MCAC25N10YHE3-TP	Digi-Reel	5,000		1	1 $1.56 10 $0.957 100 $0.6232 1000 $0.43794 10000 $0.38967	Buy Now
	MCAC25N10YHE3-TP	Cut Tape	5,000		1	1 $1.56 10 $0.957 100 $0.6232 1000 $0.43794 10000 $0.38967	Buy Now
Infineon Technologies AG IPB025N10N3GATMA1 MOSFET N-CH 100V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB025N10N3GATMA1	Reel	5,000		1,000	1 - 10 - 100 - 1000 $2.91012 10000 $2.91012	Buy Now
Avnet Americas	IPB025N10N3GATMA1	Reel	13,000	16 Weeks	1,000	1 - 10 - 100 - 1000 $2.36692 10000 $2.28932	Buy Now
Mouser Electronics	IPB025N10N3GATMA1		3,558			1 $6.35 10 $4.63 100 $3.38 1000 $2.91 10000 $2.87	Buy Now
Newark	IPB025N10N3GATMA1	Bulk	12,907		1	1 $6.09 10 $4.3 100 $3.23 1000 $3.04 10000 $3.04	Buy Now
RS	IPB025N10N3GATMA1	Bulk			1	1 $5.39 10 $5.39 100 $5.39 1000 $5.39 10000 $5.39	Get Quote

TME	IPB025N10N3GATMA1		471		1	1 $4.92 10 $3.91 100 $3.51 1000 $3.27 10000 $3.16	Buy Now
Chip One Stop	IPB025N10N3GATMA1	Cut Tape	3,800			1 $5.52 10 $4.48 100 $3.84 1000 $2.79 10000 $2.79	Buy Now
EBV Elektronik	IPB025N10N3GATMA1		1,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPB025N10N3GATMA1		1,000		1	1 - 10 - 100 - 1000 $3.68 10000 $3.68	Buy Now
Win Source Electronics	IPB025N10N3GATMA1		2,800			1 - 10 $7.6901 100 $5.1268 1000 $5.1268 10000 $5.1268	Buy Now
STMicroelectronics STD25N10F7 MOSFET N-CH 100V 25A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STD25N10F7	Digi-Reel	4,817		1	1 $1.77 10 $1.128 100 $1.77 1000 $0.54672 10000 $0.54672	Buy Now
	STD25N10F7	Cut Tape	4,817		1	1 $1.77 10 $1.128 100 $1.77 1000 $0.54672 10000 $0.54672	Buy Now
	STD25N10F7	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.49137	Buy Now
Mouser Electronics	STD25N10F7		3,180			1 $1.55 10 $1.05 100 $0.722 1000 $0.531 10000 $0.445	Buy Now
Newark	STD25N10F7	Cut Tape	5,406		1	1 $1.45 10 $1.08 100 $0.782 1000 $0.607 10000 $0.607	Buy Now
STMicroelectronics	STD25N10F7		3,180		1	1 $1.57 10 $1.07 100 $0.72 1000 $0.58 10000 $0.58	Buy Now
Ameya Holding Limited	STD25N10F7		1,199			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	STD25N10F7		2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	STD25N10F7	Cut Tape	2,490			1 - 10 $0.919 100 $0.645 1000 $0.471 10000 $0.471	Buy Now
Win Source Electronics	STD25N10F7		50,000			1 - 10 - 100 $0.5585 1000 $0.4324 10000 $0.4324	Buy Now
PanJit Group PJD25N10A_L2_00001 100V N-CHANNEL ENHANCEMENT MODE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJD25N10A_L2_00001	Digi-Reel	2,603		1	1 $1.15 10 $0.724 100 $1.15 1000 $0.33422 10000 $0.33422	Buy Now
	PJD25N10A_L2_00001	Cut Tape	2,603		1	1 $1.15 10 $0.724 100 $1.15 1000 $0.33422 10000 $0.33422	Buy Now
Ozdisan Elektronik	PJD25N10A_L2_00001					1 $0.39778 10 $0.39778 100 $0.39778 1000 $0.39778 10000 $0.3459	Get Quote

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25N10 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
25N10		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

25N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and	Original	25N10 25N10 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T	PDF
.25N10 Abstract: 25N10 25N10G Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and	Original	25N10 25N10 25N10L-TN3-R 25N10G-TN3-R O-252 QW-R502-448 .25N10 25N10G	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and	Original	25N10 25N10 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T	PDF
25N100 Abstract: No abstract text available Text: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	N100A O-204 O-247 25N100g2 25N100	PDF
Untitled Abstract: No abstract text available Text: Advanced Power Electronics Corp. 25N10GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics 100V R DS ON Low Gate Charge G 80mΩ ID RoHS-compliant, halogen-free 23A S Description G Advanced Power MOSFETs from APEC provide the designer with the best	Original	AP25N10GH/J-HF-3 O-252 AP25N10GH-HF-3 O-252 O-251 AP25N10GJ-HF-3) O-251 AP25N10 25N10GJ	PDF
Untitled Abstract: No abstract text available Text: Preliminary data Low VCE sat High speed IGBT with Diode VCES 25N100U1 1000 V 25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100AU1	PDF
30n60 Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10 Text: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
2SN100 Abstract: 25N100 Text: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C	OCR Scan	25N100 25N100A O-247 2SN100	PDF
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A	PDF
MTH25N10 Abstract: TH25N08 34002 MTH25N08 Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 2 5N 0 8 M T H 2 5N 1 0 M TM 25N10 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S P O W ER FETs AMPERES These TMOS Pow er FETs are desig n ed fo r h ig h speed p o w e r	OCR Scan	25N10 MTH25N10 TH25N08 34002 MTH25N08	PDF
C15VL Abstract: No abstract text available Text: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0	OCR Scan	25N100 O-247 IXSH25N100 C15VL	PDF
KYS 30 40 diode Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching	OCR Scan	30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100	PDF
Untitled Abstract: No abstract text available Text: □IXYS Preliminary data Low -u vv V v ICE sat High speed IGBT with Diode V " ces 1000 V 25N100U1 25N100AU1 1000 V ^C25 50 A 50 A V v CE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES ^ v CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	IXGH25N100U1 IXGH25N100AU1 O-247 IXGH25N100U1 IXGH25N100AU1	PDF

7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh	PDF
2SN100 Abstract: 25N100 Text: VCES Low V CE sat <" W¥V High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A ^C25 1000 V 1000 V v* CE(sat) 50 A 1 3.5 V 50 A 4.0 V G_ Symbol Test C onditions Maximum Ratings V " ces Tj = 25°C to 150°C 1000 V v CGR T j = 25°C to 150°C; RGE = 1 M n 1000	OCR Scan	N100A T0-247 T0-204 O-247 2SN100 25N100	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
SMD diode b24 Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64	OCR Scan	12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF
20N15 Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.	OCR Scan		PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E	PDF
MTM13N50E Abstract: MTM13N50 40N20 MOSFET IRF250 TM12P10 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e Text: TT TMOS TMOS Power MOSFETs Metal Packages — TO-204AA/AE 0 40" 060" TO-204AA CASE 1-07 Table 6 — P-Channel Voss Volts Min 100 RDS(on) ID (Ohms) (Amps) Max TO-204AE CASE 197A-03 Table 7 — N-Channel Device •d (cont) Amps Pd * (Watts) Max VDSS (Volts)	OCR Scan	O-204AA/AE O-204AA O-204AE 97A-03 TM12P10 TM20P10 MTM6N100E MTM6N80E IRF440 IRF450 MTM13N50E MTM13N50 40N20 MOSFET IRF250 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e	PDF
SEFH25N08 Abstract: SEFH25N10 25N1 Text: S G S-THOMSON 07E D g T3C 17565 SEFH25N08 25N10 SEFM25N08 25N10 S fi s t% . 7=15=1237 OOiaObö D \| D N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field	OCR Scan	SEFH25N08 SEFH25N10 SEFM25N08 SEFM25N10 300jis, 25N1	PDF

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25N10 Search Results

25N10 Result Highlights (1)

25N10 Price and Stock

TTM Technologies BD2425N100ATI

Micro Commercial Components MCAC25N10YHE3-TP

Infineon Technologies AG IPB025N10N3GATMA1

STMicroelectronics STD25N10F7

PanJit Group PJD25N10A_L2_00001

25N10 Datasheets (1)

25N10 Datasheets Context Search

Untitled

.25N10

Untitled

25N100

Untitled

Untitled

30n60

30n60

2SN100

40N60A

MTH25N10

C15VL

KYS 30 40 diode

Untitled

7N60B

2SN100

40n80

SMD diode b24

ixgh 1500

20N15

IRFD1Z3 equivalent

MTM13N50E

MTM13N50E

SEFH25N08