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    SEFH25N08

    Abstract: SEFH25N10 25N1
    Text: S G S-THOMSON 07E D g T3C 17565 SEFH25N08 SEFH25N10 SEFM25N08 SEFM25N10 S fi s t% . 7=15=1237 OOiaObö D | D N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


    OCR Scan     		PDF SEFH25N08 SEFH25N10 SEFM25N08 SEFM25N10 300jis, 25N1

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120