25N1 Search Results

25N1 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
G825N10201DEU		Amphenol Communications Solutions	Pin Header 2.0mm Pitch Rightangle Surfacemount, 1x10Pin, MATTE TIN, LCP, 3.2mm2.0mm2.8mm, T&R, CAP
G825N14202DEU		Amphenol Communications Solutions	Pin Header 2.0mm Pitch Rightangle Surfacemount, 2x7Pin, MATTE TIN, LCP, 3.2mm2.0mm6.22mm, T&R, CAP

25N1 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IPB025N10N3GATMA1 MOSFET N-CH 100V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB025N10N3GATMA1	Reel	5,000		1,000	1 - 10 - 100 - 1000 $2.91012 10000 $2.91012	Buy Now
Avnet Americas	IPB025N10N3GATMA1	Reel	13,000	16 Weeks	1,000	1 - 10 - 100 - 1000 $2.36692 10000 $2.28932	Buy Now
Mouser Electronics	IPB025N10N3GATMA1		3,558			1 $6.35 10 $4.63 100 $3.38 1000 $2.91 10000 $2.87	Buy Now
Newark	IPB025N10N3GATMA1	Bulk	12,907		1	1 $6.09 10 $4.3 100 $3.23 1000 $3.04 10000 $3.04	Buy Now
Chip One Stop	IPB025N10N3GATMA1	Cut Tape	3,800			1 $5.52 10 $4.48 100 $3.84 1000 $2.79 10000 $2.79	Buy Now

EBV Elektronik	IPB025N10N3GATMA1		1,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IPB025N10N3GATMA1		1,000		1	1 - 10 - 100 - 1000 $3.68 10000 $3.68	Buy Now
Win Source Electronics	IPB025N10N3GATMA1		2,800			1 - 10 $7.6901 100 $5.1268 1000 $5.1268 10000 $5.1268	Buy Now
Cal-Chip Electronics CHV2225N1K0104KXT HVCAP2225 X7R .1UF 10% 1KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CHV2225N1K0104KXT	Reel	2,000		1,000	1 - 10 - 100 - 1000 $0.47605 10000 $0.39521	Buy Now
	CHV2225N1K0104KXT	Digi-Reel	2,000		1	1 $1.45 10 $0.912 100 $0.6274 1000 $0.51208 10000 $0.51208	Buy Now
	CHV2225N1K0104KXT	Cut Tape	2,000		1	1 $1.45 10 $0.912 100 $0.6274 1000 $0.51208 10000 $0.51208	Buy Now
Maxecho Technologies Corp HBWS2012-5N1S FIXED IND 5.1NH 600MA 80MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HBWS2012-5N1S	Digi-Reel	1,970		1	1 $0.15 10 $0.114 100 $0.0885 1000 $0.06874 10000 $0.06874	Buy Now
	HBWS2012-5N1S	Cut Tape	1,970		1	1 $0.15 10 $0.114 100 $0.0885 1000 $0.06874 10000 $0.06874	Buy Now
Micro Commercial Components MIW25N120FA-BP IGBT 1200V 25A,TO-247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MIW25N120FA-BP	Tube	1,175		1	1 $6.23 10 $4.181 100 $6.23 1000 $2.52492 10000 $2.52492	Buy Now
Cal-Chip Electronics CHV2225N1K0563KXT HVCAP2225 X7R .056UF 10% 1KV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CHV2225N1K0563KXT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.16439 10000 $1.96749	Buy Now
	CHV2225N1K0563KXT	Cut Tape	1,000		1	1 $5.21 10 $3.518 100 $2.6214 1000 $2.257 10000 $2.257	Buy Now
	CHV2225N1K0563KXT	Digi-Reel	1,000		1	1 $5.21 10 $3.518 100 $2.6214 1000 $2.257 10000 $2.257	Buy Now

Find more 25N1 price and stock on Findchips.com

25N1 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
25N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
25N120	IXYS	Low Vce(sat) High Speed IGBT	Original	PDF
25N18	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

25N1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
.25N16 Abstract: 25N160 Text: High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	25N160 IC110 O-247 O-268 .25N16 25N160	PDF
25N120 Abstract: 25N120 ixys Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C	Original	25N120 25N120D1 O-247 25N120 25N120 ixys	PDF
Untitled Abstract: No abstract text available Text: VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	25N160 IC110 O-247 O-2684.	PDF
IC IGBT 25N120 Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12 Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C	Original	25N120 25N120D1 O-247 IC IGBT 25N120 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and	Original	25N10 25N10 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T	PDF
25N120 Abstract: IC IGBT 25N120 25n120 IGBT D-68623 Text: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	25N120 25N120D1 O-247 25N120 IC IGBT 25N120 25n120 IGBT D-68623	PDF
.25N10 Abstract: 25N10 25N10G Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and	Original	25N10 25N10 25N10L-TN3-R 25N10G-TN3-R O-252 QW-R502-448 .25N10 25N10G	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and	Original	25N10 25N10 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T	PDF
IC IGBT 25N120 Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C	Original	25N120 25N120D1 O-247 IC IGBT 25N120 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E	PDF
100N120 Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352 Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50	Original	15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352	PDF
Untitled Abstract: No abstract text available Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3476	PDF
Untitled Abstract: No abstract text available Text: New Products Indicator Square Ultra Bright LED Type M2P Large Square-bodied Indicators. New models added with Ultra LEDs. • New models with ultra bright LEDs added to single-screen models. • Previous models not changed. Line up of models in seven colors (the previous red, orange,	Original	2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: A230-E1-01	PDF
kgt25n120kda Abstract: 25N120KDA kgt25n120 IGBT 2000 25N120 Text: SEMICONDUCTOR 25N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.	Original	KGT25N120KDA kgt25n120kda 25N120KDA kgt25n120 IGBT 2000 25N120	PDF
c2555 Abstract: IC IGBT 25N120 25N120 Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C	OCR Scan	25N120 25N120A 25N120A c2555 IC IGBT 25N120	PDF

tt 2146 m Abstract: No abstract text available Text: DIXYS IXSH 25N120A IGBT IC25 V CES r Short Circuit SOA Capability Symbol Test C onditions V CES Tj Tj v CQR V 0 ES vQEM CE sat Maximum Ratings = 25°C to 150°C = 25°C to 150°C; RGE= 1 MO Continuous Transient ' cm Tc = 25°C Tc =90°C Tc = 25°C, 1 ms SSOA	OCR Scan	25N120A O-247 tt 2146 m	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
25N120AU1 Abstract: No abstract text available Text: IGBT with Diode IXSH 25N120AU1 VC ES V C E sat SCSOA Capability Sym bol Te st C on d ition s V CES Tj = 25°C to 150°C 1200 V vCGR T, = 2 5 °C to 150°C; R se = 1 M£2 1200 V v vGEM Continuous T ransient ±20 ±30 V V Maximum Ratings 50 25 80 A A A = 50	OCR Scan	25N120AU1 O-247 -100/ps: 25N120AU1	PDF
2SN100 Abstract: 25N100 Text: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C	OCR Scan	25N100 25N100A O-247 2SN100	PDF
25N120AU1 Abstract: No abstract text available Text: n ix Y S IGBT with Diode IXSH 25N120AU1 •C25 V CES SCSOA Capability CE sat Symbol Test Conditions VcHS T j = 25°C to 150°C 1200 V VC0R T j = 25°C to 150°C; RGE= 1 M il 1200 V v v GEM Continuous Transient U25 ' cm T c = 25°C T c = 90°C T 0 = 25°C, 1 ms	OCR Scan	25N120AU1 O-247AD IXSH25N120AU1 25N120AU1	PDF
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A	PDF
MTH25N10 Abstract: TH25N08 34002 MTH25N08 Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 2 5N 0 8 M T H 2 5N 1 0 M TM 25N10 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S P O W ER FETs AMPERES These TMOS Pow er FETs are desig n ed fo r h ig h speed p o w e r	OCR Scan	25N10 MTH25N10 TH25N08 34002 MTH25N08	PDF
C15VL Abstract: No abstract text available Text: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0	OCR Scan	25N100 O-247 IXSH25N100 C15VL	PDF
Untitled Abstract: No abstract text available Text: TOS HIB A { D I S C R E T E / O P T O } io 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A de l'ìc m a sa 90D SEMICONDUCTOR DD i b i i a i g 16161 D T ~ ? 3 - I3 TOSHIBA GTR MODULE 25N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.	OCR Scan	MG25N1BS1 EGA-MG25N1BS1-A	PDF
KYS 30 40 diode Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100 Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching	OCR Scan	30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100	PDF

25N1 Search Results

25N1 Result Highlights (2)

25N1 Price and Stock

Infineon Technologies AG IPB025N10N3GATMA1

Cal-Chip Electronics CHV2225N1K0104KXT

Maxecho Technologies Corp HBWS2012-5N1S

Micro Commercial Components MIW25N120FA-BP

Cal-Chip Electronics CHV2225N1K0563KXT

25N1 Datasheets (3)

25N1 Datasheets Context Search

.25N16

25N120

Untitled

IC IGBT 25N120

Untitled

25N120

.25N10

Untitled

IC IGBT 25N120

100N120

Untitled

Untitled

kgt25n120kda

c2555

tt 2146 m

30n60

25N120AU1

2SN100

25N120AU1

40N60A

MTH25N10

C15VL

Untitled

KYS 30 40 diode