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    25N1 Search Results

    25N1 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    G825N10201DEU Amphenol Communications Solutions Pin Header 2.0mm Pitch Rightangle Surfacemount, 1x10Pin, MATTE TIN, LCP, 3.2mm*2.0mm*2.8mm, T&R, CAP Visit Amphenol Communications Solutions
    G825N14202DEU Amphenol Communications Solutions Pin Header 2.0mm Pitch Rightangle Surfacemount, 2x7Pin, MATTE TIN, LCP, 3.2mm*2.0mm*6.22mm, T&R, CAP Visit Amphenol Communications Solutions
    SiT1602BC-12-25N-19.200000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    25N1 Price and Stock

    Diodes Incorporated AP2125N-1.8TRG1

    IC REG LINEAR 1.8V 300MA SOT23-3
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    DigiKey AP2125N-1.8TRG1 Cut Tape 9,436 1
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    AP2125N-1.8TRG1 Digi-Reel 9,436 1
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    AP2125N-1.8TRG1 Reel 6,000 3,000
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    Newark AP2125N-1.8TRG1 Cut Tape 958 5
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    TME AP2125N-1.8TRG1 1
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    Avnet Silica AP2125N-1.8TRG1 10 Weeks 3,000
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    Cal-Chip Electronics CHV2225N1K0124KXT

    HVCAP2225 X7R .12UF 10% 1KV
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    Cal-Chip Electronics CHV2225N1K0563KXT

    HVCAP2225 X7R .056UF 10% 1KV
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    DigiKey CHV2225N1K0563KXT Reel 1,000 1,000
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    Cal-Chip Electronics CHV1825N1K0103KXT

    HVCAP1825 X7R .01UF 10% 1KV
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    Cal-Chip Electronics CHV1825N1K0473KXT

    HVCAP1825 X7R .047UF 10% 1KV
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    DigiKey CHV1825N1K0473KXT Reel 1,000 1,000
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    Find more 25N1 price and stock on Findchips.com

    25N1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    25N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    25N120 IXYS Low Vce(sat) High Speed IGBT Original PDF
    25N18 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    25N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    .25N16

    Abstract: 25N160
    Text: High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 25N160 IC110 O-247 O-268 .25N16 25N160

    25N120

    Abstract: 25N120 ixys
    Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 25N120 25N120D1 O-247 25N120 25N120 ixys

    Untitled

    Abstract: No abstract text available
    Text: VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 High Voltage IGBT For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 25N160 IC110 O-247 O-2684.

    IC IGBT 25N120

    Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12
    Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 25N120 25N120D1 O-247 IC IGBT 25N120 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and


    Original     		PDF 25N10 25N10 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T

    25N120

    Abstract: IC IGBT 25N120 25n120 IGBT D-68623
    Text: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		PDF 25N120 25N120D1 O-247 25N120 IC IGBT 25N120 25n120 IGBT D-68623

    .25N10

    Abstract: 25N10 25N10G
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and


    Original     		PDF 25N10 25N10 25N10L-TN3-R 25N10G-TN3-R O-252 QW-R502-448 .25N10 25N10G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and


    Original     		PDF 25N10 25N10 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T

    IC IGBT 25N120

    Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E
    Text: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C


    Original     		PDF 25N120 25N120D1 O-247 IC IGBT 25N120 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E

    100N120

    Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
    Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50


    Original     		PDF 15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352

    Untitled

    Abstract: No abstract text available
    Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		PDF 2SK3476

    Untitled

    Abstract: No abstract text available
    Text: New Products Indicator Square Ultra Bright LED Type M2P Large Square-bodied Indicators. New models added with Ultra LEDs. • New models with ultra bright LEDs added to single-screen models. • Previous models not changed. Line up of models in seven colors (the previous red, orange,


    Original     		PDF 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: A230-E1-01

    kgt25n120kda

    Abstract: 25N120KDA kgt25n120 IGBT 2000 25N120
    Text: SEMICONDUCTOR 25N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.


    Original     		PDF KGT25N120KDA kgt25n120kda 25N120KDA kgt25n120 IGBT 2000 25N120

    c2555

    Abstract: IC IGBT 25N120 25N120
    Text: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C


    OCR Scan     		PDF 25N120 25N120A 25N120A c2555 IC IGBT 25N120

    tt 2146 m

    Abstract: No abstract text available
    Text: DIXYS IXSH 25N120A IGBT IC25 V CES r Short Circuit SOA Capability Symbol Test C onditions V CES Tj Tj v CQR V 0 ES vQEM CE sat Maximum Ratings = 25°C to 150°C = 25°C to 150°C; RGE= 1 MO Continuous Transient ' cm Tc = 25°C Tc =90°C Tc = 25°C, 1 ms SSOA


    OCR Scan     		PDF 25N120A O-247 tt 2146 m

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


    OCR Scan     		PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    25N120AU1

    Abstract: No abstract text available
    Text: IGBT with Diode IXSH 25N120AU1 VC ES V C E sat SCSOA Capability Sym bol Te st C on d ition s V CES Tj = 25°C to 150°C 1200 V vCGR T, = 2 5 °C to 150°C; R se = 1 M£2 1200 V v vGEM Continuous T ransient ±20 ±30 V V Maximum Ratings 50 25 80 A A A = 50


    OCR Scan     		PDF 25N120AU1 O-247 -100/ps: 25N120AU1

    2SN100

    Abstract: 25N100
    Text: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C


    OCR Scan     		PDF 25N100 25N100A O-247 2SN100

    25N120AU1

    Abstract: No abstract text available
    Text: n ix Y S IGBT with Diode IXSH 25N120AU1 •C25 V CES SCSOA Capability CE sat Symbol Test Conditions VcHS T j = 25°C to 150°C 1200 V VC0R T j = 25°C to 150°C; RGE= 1 M il 1200 V v v GEM Continuous Transient U25 ' cm T c = 25°C T c = 90°C T 0 = 25°C, 1 ms


    OCR Scan     		PDF 25N120AU1 O-247AD IXSH25N120AU1 25N120AU1

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


    OCR Scan     		PDF 2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A

    MTH25N10

    Abstract: TH25N08 34002 MTH25N08
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 2 5N 0 8 M T H 2 5N 1 0 M TM 25N10 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S P O W ER FETs AMPERES These TMOS Pow er FETs are desig n ed fo r h ig h speed p o w e r


    OCR Scan     		PDF 25N10 MTH25N10 TH25N08 34002 MTH25N08

    C15VL

    Abstract: No abstract text available
    Text: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0


    OCR Scan     		PDF 25N100 O-247 IXSH25N100 C15VL

    Untitled

    Abstract: No abstract text available
    Text: TOS HIB A { D I S C R E T E / O P T O } io 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A de l'ìc m a sa 90D SEMICONDUCTOR DD i b i i a i g 16161 D T ~ ? 3 - I3 TOSHIBA GTR MODULE 25N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG25N1BS1 EGA-MG25N1BS1-A

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100