D 16027 G
Abstract: No abstract text available
Text: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20030
CSD20030D
CSD20030,
D 16027 G
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D 16027 G
Abstract: No abstract text available
Text: CSD20030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 20A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD20030â
O-247-3
CSD20030
D 16027 G
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IXGA30N60C3C1
Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
IF110
O-220AB
O-247
IXGH30N60C3C1
30N60C3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings
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IC110
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
O-263
100kHz
O-220AB
IF110
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G30N60
Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
Text: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions
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IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
IC110
100kHz
O-263
O-220
IF110
G30N60
IXGH30N60C3C1
20A 300V Schottky Diode
IF110
IXGP30N60C3C1
IGBT 600V 40A diode
30N60C
40ATD
IXGA30N60C3C1
IXGP30N60C3
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pj 69 diode
Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Text: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU
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LeicestershireLE17
Vo145
p1595
ICSCRM99)
0-7803-6404-X/00/
pj 69 diode
shottky barrier diode 100V 100A
diode pj
sic igbt 1000V 400 A
failure analysis IGBT
sic diode
diode schottky 600v
Cree SiC diode die
300C
600C
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Untitled
Abstract: No abstract text available
Text: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already
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25kHz.
50kHz,
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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APT0502
Abstract: No abstract text available
Text: APTDC20H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 20A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR1 CR3 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •
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APTDC20H601G
APT0502
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Untitled
Abstract: No abstract text available
Text: APTDC20H601G SiC Diode Full Bridge Power Module 3 VRRM = 600V IF = 20A @ Tc = 80°C 4 Application 5 1 • • • • 6 2 Features CR3 CR1 CR2 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers CR4 • 7 8 - 9 10 •
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APTDC20H601G
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S4 44 DIODE schottky
Abstract: ntc1.0 AG QC TRANSISTOR
Text: APTC60HM70SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ Ω max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60HM70SCT
S4 44 DIODE schottky
ntc1.0
AG QC TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: APT20DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 20A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery
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APT20DC60HJ
OT-227)
RoH00
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Untitled
Abstract: No abstract text available
Text: APT2X21DC60J APT2X20DC60J ISOTOP SiC Diode Power Module 2 2 3 1 4 VRRM = 600V IF = 20A @ TC = 100°C Application 3 • • • • Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features Anti-Parallel Anti-Parallel
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APT2X21DC60J
APT2X20DC60J
APT2X60DC120J
APT2X61DC120J
OT-227)
APT2X21
20DC60J
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Diode 400V 20A
Abstract: igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A
Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
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APT20GS60BRDQ1
APT20GS60SRDQ1
100kHz,
Diode 400V 20A
igbt 400V 20A
MOSFET welding INVERTER 200A
MIC4452
power Diode 400V 20A
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Untitled
Abstract: No abstract text available
Text: APTC60DDAM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual boost chopper Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • SiC Schottky Diode
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APTC60DDAM45CT1G
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Untitled
Abstract: No abstract text available
Text: APTC60DSKM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM45CT1G
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Untitled
Abstract: No abstract text available
Text: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM70CT1G
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Untitled
Abstract: No abstract text available
Text: APT50GF60JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 600V IC = 50A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT
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APT50GF60JCU2
OT-227)
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APT0406
Abstract: APT0502
Text: APTC60DSKM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM45CT1G
APT0406
APT0502
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schottky 400v
Abstract: APT0406 APT0502
Text: APTC60DSKM70CT1G VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual buck chopper Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies Features • • SiC Schottky Diode - Zero reverse recovery
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APTC60DSKM70CT1G
schottky 400v
APT0406
APT0502
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APT0502
Abstract: No abstract text available
Text: APT50GF60JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 600V IC = 50A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT
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APT50GF60JCU2
OT-227)
APT0502
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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20A 300V Schottky Diode
Abstract: MC20200 diode schottky 400A 300V
Text: 677859^ ÛLTRÜNICS INC 3fi D E | b 7 7 f l S im DOODOn 3 ü T - 0 3 -/9 Data Sheet No. 28302 OLTRONICS, INC. 73 Tremont Street Boston, MA 02108 -T - 3 3 -en Power Schottky Diodes ® Tel. 617 354-6534 Semiconductor O.EM. 20 AMP, 200 Volt Power Schottky Rectifier
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MC20200
20200T.
MC20200
20A 300V Schottky Diode
diode schottky 400A 300V
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5n fast recovery diodes
Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Text: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.
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SC802-04
TS902C2
TS902C3
TS912S6
TS906C2
5n fast recovery diodes
30A 45V SCHOTTKY BARRIER RECTIFIER
GENERAL SEMICONDUCTOR SMD DIODES
smd diode 0.5A fast 600v
LOW LOSS FAST RECOVERY DUAL DIODES
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