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    APT20GS60BRDQ1 Search Results

    APT20GS60BRDQ1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20GS60BRDQ1G Microsemi Insulated Gate Bipolar Transistor - NPT High Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 20; Original PDF

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    MOSFET welding INVERTER 200A

    Abstract: H bridge 300v 30a jc5010
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, MOSFET welding INVERTER 200A H bridge 300v 30a jc5010

    Diode 400V 20A

    Abstract: igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, Diode 400V 20A igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A

    Untitled

    Abstract: No abstract text available
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz,

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit