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    1N4608 Price and Stock

    Microchip Technology Inc 1N4608

    DIODE GEN PURP 85V 200MA DO35
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    DigiKey 1N4608 Bulk 28 1
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    Avnet Americas 1N4608 Reel 22 Weeks 286
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    Mouser Electronics 1N4608 227
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    Microchip Technology Inc 1N4608/TR

    DIODE GEN PURP 85V 200MA DO35
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    Microsemi Corporation 1N4608

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    Bristol Electronics 1N4608 1,600
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    Quest Components 1N4608 1,280
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    AP PRODUCTS 1N4608

    Rectifier Diode, 85 Volt, DO-35
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    Quest Components 1N4608 271
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    1N4608 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N4608 Microsemi Signal or Computer Diode Original PDF
    1N4608 APD Semiconductor Planar Diodes Scan PDF
    1N4608 APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
    1N4608 General Diode Silicon Switching Diode Scan PDF
    1N4608 General Electric Semiconductor Data Book 1971 Scan PDF
    1N4608 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N4608 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4608 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4608 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4608 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N4608 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N4608 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4608 Panasonic Silicon epitaxial planar type diode. Scan PDF
    1N4608 Texas Instruments Discrete Devices 1978 Scan PDF

    1N4608 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N4608 SILICON SWITCHING DIODE *absoluto maximum ratings at 25°C free-air temperature (unless otherwise noted) VRM|wkg| Working Peak Reverse Voltage


    Original     		PDF 1N4608 temperature1N4608

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    1N4607

    Abstract: TL50 1N4150 1N4608 DO-213AA LL4607 LL4608 diode with PIV 200
    Text: Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m


    Original     		PDF DO-35 1N4607 1N4150 -55oC 031-A 1N4607 TL50 1N4150 1N4608 DO-213AA LL4607 LL4608 diode with PIV 200

    ALL4150

    Abstract: 1N4606
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original     		PDF 00000S3 DO-35 ALL4152 ALL4153 ALL4450 ALL4451 ALL4453 ALL4454 500mW ALL4150 1N4606

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DeT | t O,î 7ESD ODPTETb 1 * D T 'O S 'O Q 67C 0 92 96 Silicon Epitaxial Planar Typei. 1N4608 Diode TENTATIVE Unit in ram COMMUNICATION A ND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


    OCR Scan     		PDF 1N4608 100mA 250mA 350mA 450mA 500mA 500mA,

    1N4607

    Abstract: 1N4452 1N4608
    Text: niCROSEMI CORP/ Ü1ATERTOÜIN SDE D • ^ 3 4 7 ^ 3 GGlHBbT 4SÛ ■ U N I T 1N4452-1N4607' 1N4608 COMPUTER DIODE Higlr Conductance T -^ 3 -o ^ FEATU RES • M etallu rgical Bond • Planar Passivated • High C o n ductance • DO-35 Package DESCRIPTION T h is series offers M etallurgical Bonding


    OCR Scan     		PDF DO-35 1N4452, 1N4607 1N4608 1N4452 1N4608 600mA 1000mA 1N4452

    1N4608

    Abstract: SC-40 toshiba diode do-35 039 opto TOSHIBA 1N4608
    Text: b7 TOSHIBA {DIS CR ETE /O PT O} 9097250 TOSHIBA DISCRETE/OPTO DeT| t O,î7ESD ODPTETb 1 * 67C 09296 Silicon Epitaxial P lanar Typei. D T m0'3’’0 4 1N4608 Diode TENTATIVE Unit in ram COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.


    OCR Scan     		PDF 1N4608 DO-35 SC-40 100mA 250mA 350mA 450mA 500mA 500mA, 1N4608 SC-40 toshiba diode do-35 039 opto TOSHIBA 1N4608

    Untitled

    Abstract: No abstract text available
    Text: COMPUTER DIODE 1N4452, 1N4607, 1N4608 High Conductance FEATURES DESCRIPTION • • • • This series offers Metallurgical Bonding and Is specifically designed for high conductance switching applications such as core memories. Metallurgical Bond Planar Passivated


    OCR Scan     		PDF DO-35 1N4452, 1N4607, 1N4608 1N4452 1N4608 400mAdc. 500mAdc 1N4607 250mA

    1N4606

    Abstract: No abstract text available
    Text: TYPES 1N4606 THRU 1N4608 SILICON SWITCHING DIODES B U L L E T I N NO. D L - S 739271, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST H IG H -C U R R E N T C O R E -D R IV E R SW IT C H IN G D IO D E S • Rugged Double-Plug Construction •mechanical data


    OCR Scan     		PDF 1N4606 1N4608

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    SS321

    Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 D07 15 SS322 SS337 DT230A HPIXP2350ADT

    1N4447-A

    Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
    Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536


    OCR Scan     		PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 1S801 1N4447-A 1N4532 1S953 1N4448-A is805 1N4449 1N4454

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    A114D

    Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
    Text: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)


    OCR Scan     		PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 A114D A114F DT230B DT230F STB-568 GER4007 a114n

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    1N4454A

    Abstract: IS954 1N4532 1S954 IS953 1S955 In4536 1N4446 1N4447 1N4448
    Text: - 148- 41 Jig 1 S -k fS] # & m % m # t rr n s & C t(p F ) m s í± £ V rrm Vr io . I f * I fm I fsm 1 tk & Vpnax m iä & i* ft I Rmax ( * tt s) * itii © 1Í ^ % 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 H i a — A H i a — A


    OCR Scan     		PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 1S806 1N4454A IS954 1N4532 1S954 IS953 1S955 In4536

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82