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    1N60A Search Results

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    1N60A Price and Stock

    Vishay Siliconix IRFR1N60ATRPBF

    MOSFET N-CH 600V 1.4A DPAK
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    DigiKey IRFR1N60ATRPBF Reel 4,000 2,000
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    • 10000 $0.625
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    IRFR1N60ATRPBF Cut Tape 2,009 1
    • 1 $1.49
    • 10 $1.237
    • 100 $0.9848
    • 1000 $0.707
    • 10000 $0.707
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    IRFR1N60ATRPBF Digi-Reel 1
    • 1 $1.49
    • 10 $1.237
    • 100 $0.9848
    • 1000 $0.707
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    New Advantage Corporation IRFR1N60ATRPBF 24,000 1
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    Vishay Siliconix IRFR1N60APBF

    MOSFET N-CH 600V 1.4A DPAK
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    DigiKey IRFR1N60APBF Tube 3,047 1
    • 1 $1.49
    • 10 $1.49
    • 100 $1.1968
    • 1000 $0.83326
    • 10000 $0.6464
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    Bristol Electronics IRFR1N60APBF 22
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    Vishay Siliconix IRFR1N60APBF-BE3

    MOSFET N-CH 600V 1.4A DPAK
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    DigiKey IRFR1N60APBF-BE3 Tube 2,995 1
    • 1 $1.05
    • 10 $1.05
    • 100 $0.84133
    • 1000 $0.62499
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    Micro Commercial Components MCU01N60A-TP

    N-CHANNEL MOSFET, DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCU01N60A-TP Reel 2,500 2,500
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    MCU01N60A-TP Cut Tape 2,375 1
    • 1 $0.63
    • 10 $0.544
    • 100 $0.3768
    • 1000 $0.26793
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    Mouser Electronics MCU01N60A-TP 2,488
    • 1 $0.63
    • 10 $0.553
    • 100 $0.377
    • 1000 $0.276
    • 10000 $0.217
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    New Advantage Corporation MCU01N60A-TP 5,000 1
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    Vishay Siliconix IRFR1N60ATRPBF-BE3

    MOSFET N-CH 600V 1.4A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR1N60ATRPBF-BE3 Cut Tape 1,869 1
    • 1 $1.49
    • 10 $1.237
    • 100 $0.9848
    • 1000 $0.707
    • 10000 $0.707
    		Buy Now
    Find more 1N60A price and stock on Findchips.com

    1N60A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N60A Microsemi Gold Bonded Germanium Diode Original PDF
    1N60A BKC International 30 V, 150 mA, gold bonded diode Scan PDF
    1N60A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N60A Unknown GE Transistor Specifications Scan PDF
    1N60A Unknown Cross Reference Datasheet Scan PDF
    1N60A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N60A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N60A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    1N60A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N60A Semitronics Germanium Diodes / Germanium Rectifiers Scan PDF

    1N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    gold detectors circuit

    Abstract: 1N60A dr 25 germanium diode M/"TV-IF Filter"
    Text: Gold Bonded Germanium Diodes 1N60A Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Applications D O -7 G lass Package AM/FM detectors Ratio detectors FM discriminators 0.018 -0.022 "


    Original     		PDF 1N60A gold detectors circuit 1N60A dr 25 germanium diode M/"TV-IF Filter"

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    1n60ag

    Abstract: 1N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091 1n60ag

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    1N60AL

    Abstract: 1N60A UTC 1N60AL 1N60AL-T92-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 1N60AL-T92-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091.

    1N60AL

    Abstract: UTC 1N60AL 1N60A 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091 1N60AL UTC 1N60AL 600v 2A ultra fast recovery diode power mosfet 600v 1N60-A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    1n60ag

    Abstract: 1N60A 1n60al T92 DIODE XT92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091 1n60ag 1n60al T92 DIODE XT92

    1N60 mosfet

    Abstract: 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)


    Original     		PDF OT-223 O-220 QW-R502-052 1N60 mosfet 1N60B diode 1n60 1N60G 1N60L 1n60 diode mosfet 1N60 1N60 Diode Equivalent 1N60 1N60 TO92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-052

    1N34A reverse recovery

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge


    OCR Scan     		PDF 1N34A 1N60A 1N128A 1N198A 1N251 1N270 1N277 1N695A 1N772A 1N933 1N34A reverse recovery

    to3a

    Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
    Text: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A


    OCR Scan     		PDF DQDD35S 1N60A 150mA 300nS to3a 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		PDF 1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N48 diode

    Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
    Text: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M


    OCR Scan     		PDF 00034e] 1N34A at-10V at-25 1N38A 1N38B -100V at-50V at-50 1N52A 1N48 diode diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1Ns4

    1n48 H

    Abstract: No abstract text available
    Text: CRIMSON DeT| S S l M C H b □ □ □ 0 3 LH S E M I C O N D U C T O R INC 2514096 CRIMSON SEMICONDUCTOR INC 99D 00349 D T-ot^o'l GERMANIUM DIODE TYPE PEAK REVERSE VO LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FORW ARD CURRENT A T 1 V O LT M A X IM U M


    OCR Scan     		PDF 1N34A at-25 1N38A at-100 1N38B 1N52A 1N54A 1N57A 1N58A 1n48 H

    1Nu5

    Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
    Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p


    OCR Scan     		PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128

    IN270

    Abstract: 1N47S6A zener 1n34a 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A diodes 1N34A color 1N4734A
    Text: TAIWAN LITO N E L E C T R O N I C M^E D • ZENER DIODES 1W ZENER DIO DES/DO -41 Device Type Nominal Zener Voltage V z <§> IzT Test Current IM IE C 0 0 3 3 1 ^ 5 0 Ü G 4 G 7 3 07*1 ■ T L I T ^ „ 13 ¡B iffi OPERATING/STORAGE TEM PERA TU RE -65°C to +200°C


    OCR Scan     		PDF DIODES/DO-41 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A VR/25Â IN270 1N47S6A zener 1n34a diodes 1N34A color

    RED Color band DIODES GLASS

    Abstract: diodes 1N34A color N4009 1n270 1N34A reverse recovery 1N4009 RED Color band DIODES 1N295A 1N34A 1N34A do-35
    Text: diodes T4 INCORPORATED DOODETfl 1 1~~ D D I 20407^3 s ~ BUTTON RECTIFIERS OPERATING AND STORAGE TEMPERATURE -6 5 °C to +175°C PRV V PK Maximum Average Rectified Current Half-Wave Resistive Load 60Hz lo > > < TYPE Maximum Peak Reverse Voltage Maximum Reverse


    OCR Scan     		PDF RA2505 RA251 RA252 RA253 RA254 DI750 1N914 1N914A 1N914B 1N4148 RED Color band DIODES GLASS diodes 1N34A color N4009 1n270 1N34A reverse recovery 1N4009 RED Color band DIODES 1N295A 1N34A 1N34A do-35

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF