Zener diode smd marking 5K
Abstract: bzy55 marking code 651 smd bzy55c3v6 bzy55c6v2
Text: BZY55C2V4~BZY55C36 500mW,5% Tolerance SMD Zener Diode Small Signal Diode 0805 A Features B Wide zener voltage range selection : 2.4V to 36V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZY55C2V4
BZY55C36
500mW
MIL-STD-202,
C/10s
Zener diode smd marking 5K
bzy55
marking code 651 smd
bzy55c3v6
bzy55c6v2
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DL4148
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • DL4148 500mW High Speed Switching Diode 100 Volt Low Current Leakage Compression Bond Construction
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DL4148
500mW
500K/W
150mA
500mW
DL4148
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SOD-123 marking code H5
Abstract: zener diode Marking code h5 sod-123
Text: MMSZ52xB Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 3.0 to 30 Volts POWER DISSIPATION – 0.5 Watts FEATURES SOD-123 • Planar die construction • 500mW power dissipation rating • Ultra-small surface mount package SOD-123 MECHANICAL DATA • Case: SOD-123 Plastic
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Original
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MMSZ52xB
OD-123
OD-123
500mW
J-STD-020D
2002/95/EC
SOD-123 marking code H5
zener diode Marking code h5 sod-123
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A2 12 zener diode
Abstract: diode ZENER A2 6 A2 9 zener diode
Text: BZX55B2V4-BZX55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±2% A Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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Original
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BZX55B2V4-BZX55B75
500mW,
DO-35
OD-27)
C/10s
A2 12 zener diode
diode ZENER A2 6
A2 9 zener diode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. Planar Die construction 500mW Power Dissipation Ideally Suited for Automated Assembly Processes Both normal and Pb free product are available :
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GDZ56
DO-35
500mW
MIL-STD-202,
DO-35
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Untitled
Abstract: No abstract text available
Text: Formosa MS Zener Diodes 1N5221B THRU 1N5267B Axial Zener type DO-35 Features 500mWatt Power Dissipation 0.022 0.56 0.018 (0.46) DIA. High Voltages from 2.4V ~ 75V 1.02 (26.0) MIN. Extremely axial lead package 0.165 (4.2) MAX. 0.079 (2.0) DIA. MAX. 1.02 (26.0)
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1N5221B
1N5267B
DO-35
500mWatt
MIL-STD-750,
500mW
10-THERMAL
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PDF
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4V3Z
Abstract: 7v5z
Text: BZT52C2V4-BZT52C75 500mW,5% Tolerance SMD Zener Diode Small Signal Diode SOD-123F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D Moisture sensitivity level 1 Matte Tin Sn lead finish Pb free version and RoHS compliant
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BZT52C2V4-BZT52C75
500mW
OD-123F
OD-123
MIL-STD-202,
4V3Z
7v5z
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TCMMSZ5224B
Abstract: TCMMSZ5222B TCMMSZ5256B
Text: PRELIMINARY DATASHEET 500mW SOD-123 SURFACE MOUNT Flat Lead Surface Mount Plastic Package Zener Voltage Regulators Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation Value Units 500 mW TSTG Storage Temperature Range
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500mW
OD-123
TCMMSZ5224B
TCMMSZ5222B
TCMMSZ5256B
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CMHZ5265B
Abstract: CMHZ5228B CMHZ5229B marking code CJ4 CMHZ5221B CMHZ5222B CMHZ5223B CMHZ5224B CMHZ5225B CMHZ5226B
Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,
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CMHZ5221B
CMHZ5267B
500mW,
CMHZ5221B
OD-123
25-June
CMHZ5265B
CMHZ5228B
CMHZ5229B
marking code CJ4
CMHZ5222B
CMHZ5223B
CMHZ5224B
CMHZ5225B
CMHZ5226B
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DS30005
Abstract: 6.8 B2 zener zener diode 2.4 b2
Text: BZM55C2V4 - BZM55C75 500mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features 500mW Power Dissipation High Stability Low Noise Fits onto SOD323/SOT23 Foot Print Hemetic Package D B A Mechanical Data • • • • • C • • • • • Case: MicroMELF
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BZM55C2V4
BZM55C75
500mW
OD323/SOT23
MIL-STD-202,
DS30005
BZM55C2V4-BZM55C75
6.8 B2 zener
zener diode 2.4 b2
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6.8 B2 zener
Abstract: 8.2 B2 ZENER zener diode 2.0 b2
Text: BZX55C2V4 - BZX55C75 500mW ZENER DIODE POWER SEMICONDUCTOR Features • • • • Very Sharp Reverse Characteristic Low Reverse Current Level Very High Stability Low Noise B A A C D Mechanical Data • • • • DO-35 Case: DO-35, Glass Terminals: Solderable per MIL-STD-202,
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BZX55C2V4
BZX55C75
500mW
DO-35,
MIL-STD-202,
DO-35
200mA
JunctioBZX55C2V4-BZX55C75
DS18013
BZX55C2V4-BZX55C75
6.8 B2 zener
8.2 B2 ZENER
zener diode 2.0 b2
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT MMSZ5221B - MMSZ5259B 500mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes E D SOD-123
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MMSZ5221B
MMSZ5259B
500mW
OD-123
OD-123,
MIL-STD-202,
01grams
DS18010
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Untitled
Abstract: No abstract text available
Text: BZT52Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 43 Volts POWER DISSIPATION – 0.5 Watts FEATURES SOD-123 • Planar die construction • 500mW power dissipation rating • Ultra-small surface mount package SOD-123 MECHANICAL DATA • Case: SOD-123 Plastic
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Original
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BZT52Cx
OD-123
OD-123
500mW
J-STD-020D
2002/95/EC
May-2010,
KSJR03
25mm2.
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PDF
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zener diode Marking code h5 sod-123
Abstract: No abstract text available
Text: MMSZ52xB Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.5 Watts FEATURES SOD-123 • Planar die construction • 500mW power dissipation rating • Ultra-small surface mount package SOD-123 MECHANICAL DATA • Case: SOD-123 Plastic
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Original
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MMSZ52xB
OD-123
OD-123
500mW
J-STD-020D
2002/95/EC
May-2010,
KSJR12
25mm2.
zener diode Marking code h5 sod-123
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Untitled
Abstract: No abstract text available
Text: 2SB772Q PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -3 3.EMITTER Collector-base voltage
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2SB772Q
OT-89
500mW
01-Jun-2002
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MARKING J3 MMBZ5248B
Abstract: MMBZ5221B MMBZ5222B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5259B
Text: MMBZ5221B DC COMPONENTS CO., LTD. THRU RECTIFIER SPECIALISTS R MMBZ5259B TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON ZENER DIODES FEATURES * * * * Planar Die construction Zener Voltages from 2.4V - 39V 500mW Power Dissipation Ideally Suited for Automated Assembly Processes
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MMBZ5221B
MMBZ5259B
500mW
OT-23
MIL-STD-202,
MMBZ5252
MMBZ5250
MMBZ5245
MMBZ5242
MMBZ5241
MARKING J3 MMBZ5248B
MMBZ5221B
MMBZ5222B
MMBZ5223B
MMBZ5225B
MMBZ5226B
MMBZ5227B
MMBZ5228B
MMBZ5229B
MMBZ5259B
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Untitled
Abstract: No abstract text available
Text: Product specification BZT55C18 • Features LL-34 Unit: mm ● 500mW Power Dissipation ● Low reverse current level 1.50 1.30 2.64REF ● Very high stability 0.50 0.35 ● Low noise ● Ideal for Surface Mountted Application 3.60 3.30 ■ Absolute Maximum Ratings Ta = 25℃
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BZT55C18
LL-34
500mW
64REF
200mA
500mW
300K/W
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Untitled
Abstract: No abstract text available
Text: Diodes IC Transistors Transistor T SMD Type Product specification KTA1663 SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ● Collector Power Dissipation: PC=500mW 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1
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KTA1663
OT-89
500mW
-500mA
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Untitled
Abstract: No abstract text available
Text: Product specification KTD1302 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=300mA 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1 2 2.60±0.1 1 3.00±0.1
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KTD1302
OT-89
500mW
300mA
100mA,
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Untitled
Abstract: No abstract text available
Text: Product specification KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1
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KTC4379
OT-89
500mW
KTA1666
500mA
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Untitled
Abstract: No abstract text available
Text: Product specification BZT55C2V7 • Features LL-34 Unit: mm ● 500mW Power Dissipation ● Low reverse current level 1.50 1.30 2.64REF ● Very high stability 0.50 0.35 ● Low noise ● Ideal for Surface Mountted Application 3.60 3.30 ■ Absolute Maximum Ratings Ta = 25℃
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BZT55C2V7
LL-34
500mW
64REF
200mA
500mW
300K/W
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PDF
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Untitled
Abstract: No abstract text available
Text: LH2101A • LH2201A • LH2301A-A.F FEATURES ABSOLUTE MAXIMUM RATINGS • LOW OFFSET VOLTAGE Supply Voltage ±22V Power Dissipation 500mW Differential Input Voltage ±30V Input Voltage Note 2 ±15V Output Short Circuit Duration Continuous Operating Temperature Range
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OCR Scan
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LH2101A
LH2201A
LH2301A-A
500mW
LH2101A
LH2201A
LH2301A
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PDF
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EQA01-06R
Abstract: eqa01 EQA01 zener EQA01-06 EQA01-35R EQA01-24R EQA01-13R EQA01-33R EQA01-25R EQA01-13
Text: 7M DE I 55367^2 OODObOM 1 |~; Zener diodes 500mW, 5 to 3 5V EQAOI-DD .V ' 2238792 COLLMER SEMICONDUCTOR INC f •s 74C 00604 T - d - • '4 - ■i ,1 . 4 • Maximum ratings Max. power dissipation at 25°C 500mW Continuous allowable junction temperature —30 to +125°C
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OCR Scan
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500mW,
EQA01-DD
500mW
EQA01-21
EQA01-22
EQA01-24
EQA01-25
EQA01-26
EQA01-28
EQA01-30
EQA01-06R
eqa01
EQA01 zener
EQA01-06
EQA01-35R
EQA01-24R
EQA01-13R
EQA01-33R
EQA01-25R
EQA01-13
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Untitled
Abstract: No abstract text available
Text: IDT8MP824S 128K x 8 CMOS STATIC RAM MODULE Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • High-density 1 megabit CMOS static RAM module • Fast access time — 25ns max. • Low-power consumption — Active: less than 500mW (typ.) — Standby: less than 8.8mW (typ.)
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OCR Scan
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IDT8MP824S
500mW
30-pin
IDT8MP824S
2715dtw
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PDF
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