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    1N4450 Search Results

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    1N4450 Price and Stock

    ITT Interconnect Solutions 1N4450

    Rectifier Diode, 40 Volt, DO-35
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    Quest Components 1N4450 344
    • 1 $0.5
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    • 100 $0.225
    • 1000 $0.15
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    Fairchild Semiconductor Corporation 1N4450

    Rectifier Diode, 40 Volt, DO-35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1N4450 80
    • 1 $2.1745
    • 10 $2.1745
    • 100 $1.0873
    • 1000 $1.0873
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    1N4450 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4450 Chenyi Electronics SMALL SIGNAL SWITCHING DIODE Original PDF
    1N4450 EIC Semiconductor High Speed Switching Diodes Original PDF
    1N4450 Good-Ark SILICON EPITAXIAL PLANAR DIODES Original PDF
    1N4450 Taitron Components Rectifier Diode, Switching Diode, Single, 40V, SOD-27|SOD-68, 2-Pin Original PDF
    1N4450 APD Semiconductor Planar Diodes Scan PDF
    1N4450 APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
    1N4450 BKC International Silicon Diodes Scan PDF
    1N4450 Crimson Semiconductor SILICON DIODES Scan PDF
    1N4450 Fairchild Semiconductor High conductance ultra fast diode. Working inverse voltage 30 V. Scan PDF
    1N4450 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N4450 General Electric Semiconductor Data Book 1971 Scan PDF
    1N4450 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N4450 International Semiconductor Rectifier Diode, Switching Diode, Single, 40V, SOD-27, 2-Pin Scan PDF
    1N4450 International Semiconductor SWITCHING DIODE Scan PDF
    1N4450 ITT Industries Silicon Diodes Scan PDF
    1N4450 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4450 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4450 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4450 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N4450 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    1N4450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4450

    Abstract: DO-204AH
    Text: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)


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    PDF 1N4450 DO-204AH) DO-35 1N4450 DO-204AH

    1N4450

    Abstract: DO-204AH
    Text: Certificate TH97/10561QM 1N4450 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min.


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    PDF TH97/10561QM 1N4450 TW00/17276EM DO-204AH) DO-35 1N4450 DO-204AH

    Untitled

    Abstract: No abstract text available
    Text: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • • • • High switching speed: max. 4 ns Reverse voltage:max. 30 V Peak reverse voltage:max. 40 V Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)


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    PDF 1N4450 DO-204AH) DO-35

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N4450 SWITCHING RECTIFIER MAXIMUM RATINGS Symbol Value Unit Maximum peak reverse voltage Rating VRM 40 V Maximum reverse voltage VR 30 V Maximum forward DC current IF 250 mA Maximum average forward current IF AV 200 mA Maximum surge forward current @ tp = 1µs


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    PDF 1N4450 MIL-PRF-19500,

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    1N4149

    Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
    Text: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end


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    PDF 1N914 1N4454 1N4149, 1N4447, 1N4449 DO-34 DO-35 13gram 1N4450 1N4451 1N4149 1N4150 1N4152 1N4153 1N4447 1N4454

    Untitled

    Abstract: No abstract text available
    Text: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature


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    PDF 1N914. 1N4454 1N4149, 1N4447 1N4449 DO-34. 1N4451 1N4453

    1N4447-A

    Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
    Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536


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    PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 1S801 1N4447-A 1N4532 1S953 1N4448-A is805 1N4449 1N4454

    Untitled

    Abstract: No abstract text available
    Text: MICROSEtll CORP/ WATERTOWN SDE D • cJ347cîb3 ODläata 511 ■ U N I T COMPUTER DIODE 1N4450J.N4451, 1N4453 Switching T -e J -a l FEATURES • Metallurgical Bond • Planar Passivated • DO-35 Package ABSOLUTE MAXIMUM RATINGS, AT 25'C 1N4450 1N4451 1N4453


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    PDF J347c 1N4450J N4451, 1N4453 1N4450 1N4451 200mAdc. 100mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: 1N4450, 1N4451, 1N4453 COMPUTER DIODE Switching ABSOLUTE MAXIMUM RATINGS, AT 25 °C FEATURES 1N4450 1N4451 1N4453 Peak Reverse Voltage. 4 0 V . 4 0 V . 3 0 V . Reverse Working Voltage. 3 0 V . 3 0 V . 2 0 V .


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    PDF 1N4450, 1N4451, 1N4453 1N4450 1N4451 1N4453 200mAdc. 500mA 100mA 200mA

    1N4450

    Abstract: BKC Semiconductors DSAIH0002560 1N6641
    Text: Silicon Switching Diodes Use Advantages 1 1N6639 1N6640 1N6641 DO-35 Hard Glass Package High Rel. Voidless General purpose fast diodes with rugged voidless hard glass tungsten design. Able to replace lower power, less robust types like 1N4150-1 and 1N4450-1.


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    PDF 1N4150-1 1N4450-1. 1N6639 1N6640 1N6641 DO-35 200mA 200mA 1N4450 BKC Semiconductors DSAIH0002560 1N6641

    1N4532

    Abstract: 1N4448-A 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531 1N4533
    Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536


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    PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 1S801 1N4532 1N4448-A 1N4449 1N4450 1N4454 1N4531 1N4533

    1N4532

    Abstract: 1S954 1N4536 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531
    Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536


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    PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 sc-11 1N4532 1S954 1N4536 1N4449 1N4450 1N4454 1N4531

    1N4453

    Abstract: 1N4450 1N4451
    Text: COMPUTER DIODE 1N4450, 1N4451, 1N4453 Switching FEATURES DESCRIPTION • M etallurgical Bond • Planar Passivated • DO-35 Package T his series offers M etallurgical Bonding and is very popular for general purpose sw itching applications. ABSO LUTE MAXIMUM RATINGS, AT 25 °C


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    PDF 1N4450, 1N4451, 1N4453 DO-35 1N4450 1N4451 1N4453

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


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    PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent

    SS321

    Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package


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    PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 D07 15 SS322 SS337 DT230A HPIXP2350ADT

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


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    PDF MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor

    Untitled

    Abstract: No abstract text available
    Text: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that


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    PDF 76S6t DO-35 025mA 1N4532 1N4531 1N4533 1N4S34 1N4536

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @


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    PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454

    FDS01201

    Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
    Text: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16


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    PDF FDS01000 O-236 BAV70 BAV74 BAV99 BAW56 FDS01201 FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


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    PDF DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064

    1N4149

    Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
    Text: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm


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    PDF 1N4149, 1N4447 1N4449 DO-34. DO-35 DO-34 1N914 1N41491* 1N44491' 1N4450 1N4149 1N4150 1N4151 1N4152 1N4153 1N44491

    bav20 itt

    Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage


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    PDF DO-35 BA170 BA201 BAV17 BAV18 BAV19 1N4449* 1N4450* 1N4451* 1N4453* bav20 itt BAV21 ITT WG713 1n4148 ITT 1N914 ITT BAV20