M16E5 Search Results

M16E5 Price and Stock

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Alliance Memory Inc AS4C1M16E560JC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AS4C1M16E560JC		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4LCM16E5TG-6
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Bristol Electronics	MT4LCM16E5TG-6		91			1 - 10 - 100 - 1000 - 10000 -	Get Quote
. MT4LCM16E5DJ-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4LCM16E5DJ-6		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Alliance Memory Inc AS4C1M16E5-60TI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AS4C1M16E5-60TI		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micron Technology Inc MT4C1M16E5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MT4C1M16E5		85			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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M16E5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MT4LC1M165 Abstract: No abstract text available Text: MT4LC1 M16E5 L 1 MEG X 16 DRAM (M IC R O N DRAM 1 M E G x 1 6 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH m FEATURES PIN ASSIGNMENT (Top View) • JE D E C - and in d u stry-stan d ard x l 6 tim ing , fu nction s, pin ou ts and p ackages • • •	OCR Scan	PDF	M16E5 024-cy C1995. MT4LC1M165
Untitled Abstract: No abstract text available Text: 1 MEG x 16 EDO DRAM DRAM M16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • JEDEC- and industry-standard x l6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process	OCR Scan	PDF	MT4LC1M16E5 024-cycle 44/50-Pin
Marking E5 Abstract: No abstract text available Text: 1 MEG x 16 EDO DRAM DRAM M16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x l6 tim ing, functions,	OCR Scan	PDF	024-cycle MT4LC1M16E5 44/50-Pin Marking E5
Untitled Abstract: No abstract text available Text: 1 MEG x 16 EDO DRAM M IC R O N I TECHNOLOGY, INC. DRAM M16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x l6 tim ing, functions,	OCR Scan	PDF	024-cycle MT4LC1M16E5 44/50-Pin
M16E5 Abstract: No abstract text available Text: PRELIMINARY D R A M 1 M E G x 1 6 D R A M 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x l6 timing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply	OCR Scan	PDF	M16E5 024-cycle 180mW MT4LC1M16E5
Untitled Abstract: No abstract text available Text: M16E5 L 1 MEG X 16 DRAM MICRON I TECHNOLOGY INC 1 M E G x 1 6 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply	OCR Scan	PDF	MT4LC1M16E5 024-cycle 180mW 44/50-Pin
Untitled Abstract: No abstract text available Text: PRELIMINARY \|U \|IC R O N 1, 2 MEG x 32 DRAM DIMMs DRAM MODULE M T2L D 132U X M T4L D 232U (X ) FEATURES • JEDEC pinout in a 100-pin, dual in-line memory module (DIMM) • 4MB (1 Meg x 32) and 8MB (2 Meg x 32) • State-of-the-art, high-performance CMOS silicon-gate	OCR Scan	PDF	100-pin, 024-cycle 100-Pin
Untitled Abstract: No abstract text available Text: MICRON I M16E5 S 1 MEG X 16 DRAM TECHNOLOGY, MC. 1 MEG x 16 DRAM DRAM 5.0V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-perform ance CMOS silicon-gate process • Single +5.0V +10% pow er supply	OCR Scan	PDF	MT4C1M16E5 024-cyde 310mW 44/50-Pin
Untitled Abstract: No abstract text available Text: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY, INC. n p A M M16E5 M16E5 U r tM IV I FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single pow er supply +3.3V +0.3V or 5V +10%	OCR Scan	PDF	MT4C1M16E5 MT4LC1M16E5 024-cycle 44/50-Pin
G1117S Abstract: MT4LC1M165 Text: ADVANCE ft M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44	OCR Scan	PDF	MT4LC1M16E5 024-cycle 225mW 44/50-Pin MT4lCtMt6E54S) L111S41 G1117S MT4LC1M165
marking 1PC 6-pin Abstract: No abstract text available Text: 1 MEG x 16 EDO DRAM MICRON I TECHNOLOGY. INC. DRAM M16E5 M16E5 FEATURES • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%	OCR Scan	PDF	MT4C1M16E5 MT4LC1M16E5 024-cycle marking 1PC 6-pin
4LCIM16E5-50 Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000 Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout	OCR Scan	PDF	42-pin 4C1M16E5) 50-pin 4LC1M16E5) 4C1M16E5-60) 4LC1M16E5-60) AS4C1M16E5) AS4LC1M16E5) -60JC 16E5-50JC 4LCIM16E5-50 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000