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    120N20 Search Results

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    120N20 Price and Stock

    Infineon Technologies AG IPP120N20NFDAKSA1

    MOSFET N-CH 200V 84A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP120N20NFDAKSA1 Tube 736 1
    • 1 $6.7
    • 10 $6.7
    • 100 $4.7882
    • 1000 $3.80239
    • 10000 $3.56299
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    Avnet Americas IPP120N20NFDAKSA1 Tube 348 18 Weeks 50
    • 1 -
    • 10 -
    • 100 $3.83444
    • 1000 $3.48585
    • 10000 $3.25346
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    IPP120N20NFDAKSA1 Bulk 19 Weeks 1
    • 1 $6.97
    • 10 $6.5
    • 100 $4.98
    • 1000 $4.98
    • 10000 $4.98
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    Mouser Electronics IPP120N20NFDAKSA1 2,034
    • 1 $6.7
    • 10 $6.29
    • 100 $3.49
    • 1000 $3.48
    • 10000 $3.48
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    Rochester Electronics IPP120N20NFDAKSA1 25 1
    • 1 $4.07
    • 10 $4.07
    • 100 $3.82
    • 1000 $3.46
    • 10000 $3.46
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    TME IPP120N20NFDAKSA1 48 1
    • 1 $6.39
    • 10 $4.88
    • 100 $3.66
    • 1000 $3.66
    • 10000 $3.66
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    Chip1Stop IPP120N20NFDAKSA1 Tube 5,454
    • 1 $6.69
    • 10 $3.7
    • 100 $2.8
    • 1000 $2.27
    • 10000 $2.27
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    Littelfuse Inc IXTP120N20X4

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP120N20X4 Tube 645 1
    • 1 $5.73
    • 10 $5.73
    • 100 $4.2362
    • 1000 $4.2362
    • 10000 $4.2362
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    Littelfuse Inc IXTH120N20X4

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH120N20X4 Tube 294 1
    • 1 $7.05
    • 10 $7.05
    • 100 $5.62733
    • 1000 $5.21425
    • 10000 $5.21425
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    Littelfuse Inc IXTQ120N20P

    MOSFET N-CH 200V 120A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ120N20P Tube 285 1
    • 1 $11.56
    • 10 $11.56
    • 100 $9.35667
    • 1000 $7.98065
    • 10000 $7.32018
    		Buy Now

    Torex Semiconductor LTD XC6120N202NR-G

    IC SUPERVISOR 1 CHANNEL SSOT24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XC6120N202NR-G Cut Tape 98 1
    • 1 $0.49
    • 10 $0.42
    • 100 $0.3139
    • 1000 $0.19059
    • 10000 $0.19059
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    Mouser Electronics XC6120N202NR-G 2,900
    • 1 $0.49
    • 10 $0.419
    • 100 $0.313
    • 1000 $0.19
    • 10000 $0.151
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    TME XC6120N202NR-G 3
    • 1 -
    • 10 $0.272
    • 100 $0.199
    • 1000 $0.186
    • 10000 $0.18
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    Find more 120N20 price and stock on Findchips.com

    120N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    120N20

    Abstract: No abstract text available
    Text: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS


    Original     		PDF 120N20 120N20

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    120N20

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    e15343

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTR 120N20P VDSS = 200 V ID25 = 85 A Ω RDS on ≤ 25 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200


    Original     		PDF 120N20P e15343

    ID104

    Abstract: IXFX
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200


    Original     		PDF 120N20 ID104 247TM ID104 IXFX

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 RDS on = (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 120N20 ISOPLUS247TM 247TM

    120N20

    Abstract: motor IG 2200 19 125OC ID104
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 ID104 247TM 125OC 728B1 120N20 motor IG 2200 19 125OC ID104

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 120N20P O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 ID104 247TM 125OC 728B1

    NS152

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXFN 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 220 ns trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 120N20P NS152

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200


    Original     		PDF 120N20 120N20 ID104 247TM O-264

    120n20

    Abstract: ID104
    Text: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 ID104 247TM 728B1 123B1 728B1 065B1 120n20 ID104

    120N20

    Abstract: DS965
    Text: IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF 120N20 OT-227 E153432 728B1 120N20 DS965

    120N20P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 120N20P O-247 120N20P

    120N20

    Abstract: No abstract text available
    Text: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 120N20 120N20 ID104 247TM O-264 125OC 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 120N20P IXTK 120N20P VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 120N20P

    IXFH120N20P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET VDSS = 200 V ID25 = 120 A Ω RDS on ≤ 22 mΩ ≤ 140 ns trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 120N20P IXFH120N20P

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		PDF 120N20 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 120N20 ISOPLUS247TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original     		PDF 120N20 OT-227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ID25 = 105 ISOPLUS247TM V A Ω 17 mΩ Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr ≤ 250 ns Preliminary Data Sheet Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS


    Original     		PDF 120N20 ISOPLUS247TM 728B1

    120N20P

    Abstract: IXTQ120N20P 120N20
    Text: PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P VDSS = 200 V ID25 = 120 A RDS on ≤ 22 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 120N20P O-264 120N20P IXTQ120N20P 120N20

    IXFK110N20

    Abstract: 20n20 IXFN120N20 IXFK120N20
    Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C


    OCR Scan     		PDF IXFN120N20 IXFN110N20 IXFK120N20 IXFK110N20 O-264 20N20 20n20

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 120N20 ISOPLUS247™ Electrically Isolated Back Surface Symbol Test Conditions v T j = 25° C to 150° C ^ = 25°Cto150°C ;R GS=1 Mi2 200 200 V V Continuous T ranslent ±20 £30 V V Tc = 25° C (MOSFET chip capability)


    OCR Scan     		PDF 120N20 ISOPLUS247TM Cto150 247TM