50n60
Abstract: ixsk50n60au1 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60AU1
O-264
50n60
ixsk50n60au1
50N60AU1
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mj 340
Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM
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50N60AU1
O-264
D-68623
mj 340
MJ340
IXSK50N60AU1
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931 diode smd
Abstract: 50n60 IXGX50N60AU1 50N60AU1 IXGX50N60AU1S ic 931
Text: Preliminary data HiPerFASTTM IGBT with Diode 50N60AU1 50N60AU1S Combi Pack VCES IC25 VCE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXGX50N60AU1
IXGX50N60AU1S
O-247
50N60AU1S)
931 diode smd
50n60
IXGX50N60AU1
50N60AU1
IXGX50N60AU1S
ic 931
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50n60
Abstract: 50N60AU1
Text: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600
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50N60AU1
O-264
50n60
50N60AU1
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50N60AU1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads 75 A I C90
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50N60AU1
O-264
50N60AU1
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mj 340
Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Text: Preliminary data VCES = 600 V 50N60AU1 = 75 A 50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
IXSX50N60AU1S
mj 340
MJ340
50n60
50N60AU1
IXSX50N60AU1
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Untitled
Abstract: No abstract text available
Text: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings
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50N60AU1
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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50N60AU1
O-264
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Untitled
Abstract: No abstract text available
Text: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES
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247TM
50N60AU1
O-247
PLUS247TM
50N60AU1)
80A/ns
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60N60A
Abstract: c5021-0
Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90
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50N60AU1
O-264
JEDECTO-264AA
100-C
50N60AU1
60N60A
c5021-0
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C8750
Abstract: No abstract text available
Text: m xY S IGBT with Diode IXSK 50N60AU1 VCES I C25 v* CE sat Short Circuit S O A Capability 600 V 75 A 2.7 V ?c G OE Maximum Ratings Symbol Test Conditions VCES T0 = 25° C to 150° C 600 V VCGR Tj = 25° C to 150°C; RGE= 1 Mi2 600 V VGES VGEM Continuous ±20
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50N60AU1
O-264AA
C8750
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Untitled
Abstract: No abstract text available
Text: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM
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50N60AU1
125-C
O-264
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Untitled
Abstract: No abstract text available
Text: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads
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50N60AU1
O-264
IXGK56N60AU1
B2-97
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50N60
Abstract: 50N6
Text: IGBT with Diode vCES 50N60AU1 50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2
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247TM
IXSX50N60AU1
IXSX50N60AU1S
50N60AU1S)
O-247
247TM
50N60AU1)
50N60
50N6
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ic tea 1090
Abstract: smd tea 521 27AD
Text: Preliminary data HiPerFAST IGBT with Diode 50N60AU1 50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO
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IXGX50N60AU1
IXGX50N60AU1S
T0-247
50N60AU1S)
O-247
s1997
ic tea 1090
smd tea 521
27AD
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B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
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O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
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IXGH50N60A
Abstract: 100-200Q IXGH50N60AS
Text: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous
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50N60A
50N60AS
O-247
50N60A)
B2-91
IXGH50N60A
100-200Q
IXGH50N60AS
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50N6
Abstract: 50N60A IXGH50N60A
Text: o ix y s HiPerFAST IGBT IXGH 50N60A VCES IC25 V— tfi Surface Mountable = 600 V = 75 A = 2.7 V = 275 ns ÔE Maximum Ratings Symbol Test Conditions V CEs T j = 2 5 °C to 1 5 0 °C 600 V Vce„ T ,J = 2 5 ° C to 15 0 °C; R jfc „ = 1 MQ 600 V v GES Continuous
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50N60A
O-247
50N60A
50N60AU1
50N6
IXGH50N60A
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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30n60
Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100
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00Q1737
20N60
O-247
30N60
40N60
25N100
45N100
45N120
20N60A
24N60A
30n60
40N60AU1
40N60
igbt 30N60
30N60A
50N100
30n60* 227
30N60U1
IXSN40N60AU1
50N60U1
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Untitled
Abstract: No abstract text available
Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62
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20N60
30N60
40N60
25N100
45N100
45N120
40N60AU1
35N100U1
55N100U1Â
52N60AU1Â
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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