MSM531652F
Abstract: 42-PIN 44-PIN 48-PIN DIP42-P-600-2
Text: Semiconductor MSM531652F 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The
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MSM531652F
576-Words
16-bit
152-Bytes
16Words
32Bytes
MSM531652F
42-PIN
44-PIN
48-PIN
DIP42-P-600-2
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te0509
Abstract: 7253X
Text: 7A ug us t, 20 05 09 :4 7: 19 PM PM7389 FREEDM 84A1024 Data Sheet Released ed ne sd ay ,1 FREEDM -84A1024 DATA SHEET Released Issue 4: March 2003 Do wn lo ad ed by Co nt e nt Te a m of Pa rtm in er In co n W Frame Engine and Datalink Manager 84A1024 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use
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PM7389
84A1024
PMC-2000689,
84A1024
FREEDMTM-84A1024
PMC-2000689
31x31
te0509
7253X
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HYE18P16161AC
Abstract: No abstract text available
Text: Data Sheet, V2.2, July 2004 HYE18P16161AC-70/L70 HYE18P16161AC-85/L85 16M Asynchronous/Page CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-7-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
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HYE18P16161AC-70/L70
HYE18P16161AC-85/L85
HYE18P16161AC
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EZR0
Abstract: SRAM SAMSUNG
Text: FREEDM -336A1024 PRELIMINARY DATA SHEET ISSUE 9 FRAME ENGINE AND DATA LINK MANAGER 336A1024 19 Ju ly, 20 02 11 :26 :56 AM PMC-1991476 ies Inc on Fr ida y, FREEDM™-336A1024 DATA SHEET PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 9: MAY, 2002 Do wn loa
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PMC-1991476
FREEDMTM-336A1024
336A1024
EZR0
SRAM SAMSUNG
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implementation of 16-tap fir filter using fpga
Abstract: FIR FILTER implementation xilinx circuit diagram of half adder XC4003PC84 XC4000 FIR Filter LUT control device fir compiler xilinx fir filter applications FIR FILTER xilinx
Text: 16-Tap, 8-Bit FIR Filter Applications Guide November 21, 1994 Application Note BY GREG GOSLIN & BRUCE NEWGARD Summary This application note describes the functionality and integration of a 16-Tap, 8-Bit Finite Impulse Response FIR filter macro with predefined coefficients (e.g. low pass) and a sample rate of 5.44 mega-samples per second or 784
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16-Tap,
XC4000-4
XC4000
16-Tap
implementation of 16-tap fir filter using fpga
FIR FILTER implementation xilinx
circuit diagram of half adder
XC4003PC84
XC4000
FIR Filter LUT control device
fir compiler xilinx
fir filter applications
FIR FILTER xilinx
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samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
samsung electronics ba41
BA175
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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IRF 950
Abstract: 74F403A 74F403ASPC N24C
Text: Revised May 1999 74F403A First-In First-Out FIFO Buffer Memory General Description Features The 74F403A is an expandable fall-through type highspeed First-In First-Out (FIFO) Buffer Memory optimized for high-speed disk or tape controllers and communication
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74F403A
74F403A
16-words
IRF 950
74F403ASPC
N24C
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06SEC
Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
06SEC
BA213
16N10
BA167
BA184
15ET
BA244
BA242
K8F5615ETM
samsung nor flash
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Untitled
Abstract: No abstract text available
Text: FREEDM -336A1024 PRELIMINARY DATASHEET ISSUE 11 FRAME ENGINE AND DATA LINK MANAGER 336A1024 ce m be r, 20 02 01 :5 5: 39 PM PMC-1991476 Tu es da y, 03 De FREEDM™-336A1024 DATASHEET PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 11: NOVEMBER 2002 Do wn
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-336A1024
336A1024
PMC-1991476
IncPMC-1991476
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k 1358
Abstract: 56FBGA
Text: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations
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SST34WA32A3
SST34WA32A4
SST34WA3283
SST34WA3284
SST34WA32x3
SST34WA32x4
MO-225,
56-fbga-MVN-6x8-1
56-Ball
S71358-01-000
k 1358
56FBGA
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W29GL064C
Abstract: No abstract text available
Text: W29GL064C 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: October 18, 2011 Preliminary - Revision E BLANK W29GL064C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1
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W29GL064C
64M-BIT
W29GL064C
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V2.3, April 2005 HYE18P32160AF-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Data Sheet, V2.3, April 2005 HYE18P32160AF-15 32M Synchronous Burst CellularRAM CellularRAM Memory Products N e v e r
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HYE18P32160AF-15
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MSM531655E
Abstract: TSOP 66 Package TSOP70-P-400
Text: Semiconductor MSM531655E 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM531655E is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 8 double
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MSM531655E
288-Double
32-bit
576-Words
16-bit
16Word
16-Bit/Page
MSM531655E
TSOP 66 Package
TSOP70-P-400
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Untitled
Abstract: No abstract text available
Text: HYE18P16161AC-70/85 Graphics & Specialty Memories 16M Async/Page CellularRAM Version 1.8 06.2003 HYE18P16161AC-70/85 16M Async/Page CellularRAM Revision History – V1.31, 11/00 Fully synchronous bus interface with multiplexed address and data, asyncronous write, 1.8V
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HYE18P16161AC-70/85
HYE18P16161AC-70/85
FBGA-40
FBGA-48
FBGA-56
48-ball
56-ball
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PF38F4060
Abstract: PF38F4060M SCSP M18 PF38F4050 PF38F4060M0y 3076* intel 3098* intel tba 790
Text: Intel StrataFlash Cellular Memory M18 SCSP 2048-Mbit M18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 256, 512 Mbit, or 1 Gbit — PSRAM Die Density: 64 or 128 Mbit — x16 Non-Mux or AD-Mux I/O Interface
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2048-Mbit
11x13
307654-005US
PF38F4060
PF38F4060M
SCSP M18
PF38F4050
PF38F4060M0y
3076* intel
3098* intel
tba 790
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156 relay
Abstract: relay 156 PM7389
Text: Oc to be r, 20 03 02 :3 7: 35 AM PM7389 FREEDM 84A1024 Data Sheet Released Tu es da y, 14 FREEDM -84A1024 DATA SHEET Released Issue 4: March 2003 lo ad ed by Am r Ma ns ou ro fS ilic on Ex pe rt Te cn ol og yI nc on Frame Engine and Datalink Manager 84A1024
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PM7389
84A1024
FREEDMTM-84A1024
84A1024
PMC-2000689,
31x31
156 relay
relay 156
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42-PIN
Abstract: 44-PIN 48-PIN DIP42-P-600-2 MSM531652F
Text: O K I Semiconductor MSM531652F_ 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM • DESCRIPTION The OKI M SM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The
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MSM531652F_
576-Words
16-bit
152-Bytes
16Words
32Bytes
MSM531652F
42-PIN
44-PIN
48-PIN
DIP42-P-600-2
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EC 9410 -F
Abstract: ec 9410- f EC 9410 -1
Text: 9410 r REGISTER STACK» 1 6 x 4 RAM WITH 3-STATE OUTPUT REGISTER „P FAIRCHILD TTL MACROLOGIC „ f! ' A c : r u tr D ESCR IPTIO N - The 9410 is a register oriented high speed 6 4 -b it Read/W rite M em ory organized as 16-words by 4-bits. A n edge triggered 4 -b it o u tp u t register allows new inpu t
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16-words
18-PIN
EC 9410 -F
ec 9410- f
EC 9410 -1
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54F10
Abstract: 74F10 E28A
Text: April 1989 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fa ll-through type high-speed First-In First-O ut (FIFO) B utter M em ory optim ized fo r high speed disk or tape co ntrollers and com m unication buffer
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16-words
54F10
74F10
E28A
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9403A-C
Abstract: No abstract text available
Text: April 1989 Semiconductor & 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fall-through type high-speed First-In First-Out (FIFO) Buffer Memory optimized for high speed disk or tape controllers and communication buffer
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16-words
9403A-C
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N74S89N
Abstract: N74LS89F N74LS89N N74S89F S54LS89F S54S89F
Text: 54S/74S89 54LS/74LS89 Preliminary LOGIC SYMBOL data FEATURES DESCRIPTION T h e ''S S }" is a 6 4 -B it h ig h -s p e e d R e a d / W r it e R a n d o m A c c e s s M e m o r y fo r u s e a s a “s c r a t c h p a d 1’ m e m ory with n o n -d e stru c tiv e
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54S/74S89
54LS/74LS89
64-Bit
54S/74S
54LS/74LS
54H/74H,
54S/74S
54LS/74LS
N74S89N
N74LS89F
N74LS89N
N74S89F
S54LS89F
S54S89F
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delta dps 298 cp
Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Text: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X
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Corporation/464
962-5011/TWX
Tech-71-038
delta dps 298 cp
delta dps 298 cp-1
IRF 8030
irf 4710
bbc 598 479 DIODE
F4049
sn 94042
Switching power supplies Delta electronics dps
MR 4710
ci 4047B
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fairchild 9410
Abstract: 18-PIN 9410 ScansUX1004
Text: 9410 REGISTER S T A C K - 1 6 x 4 RAM WITH 3-STATE OUTPUT REGISTER FAIRCHILD TTL MACROLOGIC DESCRIPTION - The 9410 is a register oriented high speed 64-bit Read/Write Memory organized as 16-words by 4-bits. An edge-triggered 4-bit output register allows new input
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64-bit
16-words
18-PIN
fairchild 9410
9410
ScansUX1004
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