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    Carling Technologies PBB-BA-24-470-11A-EG

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    Carling Technologies PBB-BA-24-450-BDB-AC

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    Carling Technologies PBA-BA-24-425-1AA-AG

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    Carling Technologies PBA-BA-24-450-5DA-AG

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    BA244 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA244 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    BA244 ITT Industries Misc. Data Book Scans 1975/76 Scan PDF
    BA244 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BA244 Mullard Quick Reference Guide 1977/78 Scan PDF
    BA244 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA244 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA244 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BA244 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA244 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA244 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA244 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA244 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BA244 Philips Components Philips Data Book Scan Scan PDF
    BA244 Semtech Silicon Epitaxial Planar Diode Switches Scan PDF
    BA244 Siemens Silicon RF Switching Diodes Scan PDF
    BA244 Telefunken Electronic Diodes 1977 Scan PDF
    BA244 Telefunken Electronic Silicon Planar Diode Scan PDF
    BA244 Thomson-CSF Condensed Data Book 1977 Scan PDF
    BA244A Honey Technology Silicon Epitaxial Planar Diode Switches Scan PDF
    BA244A Iskra Silicon Switching / Planar Signal Diodes Scan PDF

    BA244 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ba244

    Abstract: No abstract text available
    Text: BA244 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100 V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100n V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100


    Original     		BA244 Current100 Voltage35 Time200n Current50n StyleDO-35 PDF

    BA244A

    Abstract: BA243A
    Text: BA243A, BA244A SILICON EPITAXIAL PLANAR DIODE SWITCHES for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is


    Original     		BA243A, BA244A BA243A BA243A BA244A PDF

    BA243A

    Abstract: BA244A
    Text: BA243A, BA244A SILICON EPITAXIAL PLANAR DIODE SWITCHES for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is


    Original     		BA243A, BA244A BA243A BA243A BA244A PDF

    Untitled

    Abstract: No abstract text available
    Text: BA244A Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m


    Original     		BA244A Current100m Voltage35 Current50n StyleDO-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA244S Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current100m V(RRM)(V) Rep.Pk.Rev. Voltage35 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m


    Original     		BA244S Current100m Voltage35 Current50n StyleDO-35 PDF

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB PDF

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204 PDF

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175 PDF

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh PDF

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65 PDF

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash PDF

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145 PDF

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT PDF

    Untitled

    Abstract: No abstract text available
    Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H PDF

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213 PDF

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379 PDF

    BA251

    Abstract: 16N10
    Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10 PDF

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204 PDF

    BA244A

    Abstract: BA243A
    Text: BA243A, BA244A Silicon Epitaxial Planar Diode Switches for electronic band-switching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also


    OCR Scan     		BA243A, BA244A DO-35 BA243A BA244A ACtot-100 PDF

    BA244A

    Abstract: ITT Intermetall BA243A
    Text: ITT SEMICOND/ INTERMETALL SÜE D 4bûE711 DDGafiaT STI IISI T-cfM$ BA243A, BA244A Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of


    OCR Scan     		BA243A, BA244A 4bflE711 DO-35 BA243A BA244A ITT Intermetall PDF

    BA244

    Abstract: BZY88C3V3 1NS226B ALL ZENER BA243 glass capacitor 1NS223B voltage variable capacitor BZY88-C3V3 1N5221B
    Text: FAIRCHILD DIODES DIODES VOLTAGE VARIABLE CAPACITOR DIODES GLASS PACKAGE Item DEVICE NO. BV V Min >R ii A @ Max C 1/C 4 C 3/C 20 V r i = 0.1V VR3 = 3V Package VR4 = 4.0 V V R20 = 20V No. Figure of Merit Q Min C PF Max Vr V 1 RF400 35 30 30 10 350 2.0 2.0


    OCR Scan     		C3/C20 RF400 DO-35 RF401 BA243 BA244 1N5221B BZY88C3V3 1NS226B ALL ZENER glass capacitor 1NS223B voltage variable capacitor BZY88-C3V3 PDF

    iskra diode

    Abstract: BA513 BA531 Iskra by dioda DIODE ISKRA BA519 Iskra BA-518 1N4153 silicon diodes BA517
    Text: IS K R A E L E C T R O N IC S IN C 2SE D • 4 fifiB 4 7 7 Silicijeve planarne signalne diode Silicon planar signal diodes Uf prl/at If I fav *'. Übb : ■ ^trr > ' pri/at pri/at pri/at 1 MHz ¿tOÓ/iA: 25 °C Ùufib —25 °C 25°C Ur Ur=OV Tip/Type mA


    OCR Scan     		BA511 1N4148 BA513 1N4448 BA517 1N4150 BA518 1N4151 BA519 1N4152 iskra diode BA531 Iskra by dioda DIODE ISKRA Iskra BA-518 1N4153 silicon diodes PDF

    BB409

    Abstract: BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode
    Text: SIEMENS/ SPCLt SEHXCONJS 7DC S B 8S3t320 0013823 8 m Discrete Semiconductors For High Frequency Applications t - o i- c / O Siemens is a major supplier of high frequency discrete semiconductors. An extensive line of tuner and band switch diodes, RF, Microwave and Dual


    OCR Scan     		8S3t320 /200CM 8-121A BB409 BF960 BF966 BF963 GP 004 DIODE BB505G LT 5202 diode PDF