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    74F189

    Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 N16E
    Text: Revised January 1999 74F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3STATE and are in the high impedance state whenever the


    Original     		PDF 74F189 64-Bit 16word 74F189SC 16-Lead 74F189 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 N16E

    MR533252J

    Abstract: MR533252J-XXMA MR533252J-XXTP
    Text: This version: Feb. 1999 Previous version: - Semiconductor MR533252J Preliminary 2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM DESCRIPTION The MR533252J is a 32Mbit Read-Only Memory whose configuration can be electrically switched


    Original     		PDF MR533252J 152-Word 16-Bit 304-Word 16Word MR533252J 32Mbit 16bit MR533252J-XXMA MR533252J-XXTP

    MR53V1652J

    Abstract: DIP42-P-600-2 MR53V1652J-XXMA MR53V1652J-XXRA MR53V1652J-XXTP d4146
    Text: This version: Feb. 1999 Previous version: - Semiconductor MR53V1652J Preliminary 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM DESCRIPTION The MR53V1652J is a 16Mbit Read-Only Memory whose configuration can be electrically switched


    Original     		PDF MR53V1652J 576-Word 16-Bit 152-Word 16Word MR53V1652J 16Mbit 16bit DIP42-P-600-2 MR53V1652J-XXMA MR53V1652J-XXRA MR53V1652J-XXTP d4146

    MSM531655E

    Abstract: TSOP 66 Package TSOP70-P-400
    Text: Semiconductor MSM531655E 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM531655E is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 8 double


    Original     		PDF MSM531655E 288-Double 32-bit 576-Words 16-bit 16Word 16-Bit/Page MSM531655E TSOP 66 Package TSOP70-P-400

    MSM531652F

    Abstract: 42-PIN 44-PIN 48-PIN DIP42-P-600-2
    Text: Semiconductor MSM531652F 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The


    Original     		PDF MSM531652F 576-Words 16-bit 152-Bytes 16Words 32Bytes MSM531652F 42-PIN 44-PIN 48-PIN DIP42-P-600-2

    74F189

    Abstract: 74F219 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E
    Text: Revised September 2000 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original     		PDF 74F219 64-Bit 74F219 16word 74F189 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E

    DIP40

    Abstract: MSM534052E TSOP44
    Text: ¡ 電子デバイス MSM534052E 262,144-Wordx16-Bit or 524,288-Word×8-Bit 8Word×16-Bit or 16Word×8-Bit/Page Mode MASKROM n 概要 MSM534052Eは262,144ワード×16ビット構成と524,288ワード×8ビット構成が切替可能で、か つページ当り8ワード×16ビット又は16ワード×8ビットの高速ページモード読み込みが可能な


    Original     		PDF MSM534052E 144-Word 16-Bit 288-Word 16Word MSM534052E262 100ns 40DIP DIP40-P-600) DIP40 MSM534052E TSOP44

    74F189

    Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 MS-013 N16E
    Text: Revised September 2000 74F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original     		PDF 74F189 64-Bit 16word 74F189SC 16-Lead 74F189 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 MS-013 N16E

    74F189

    Abstract: 16-WORD 74F189PC F189 MS-001 N16E
    Text: Revised January 2004 74F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original     		PDF 74F189 64-Bit 16word 74F189PC 16-Lead 74F189 16-WORD 74F189PC F189 MS-001 N16E

    MR53V3252J

    Abstract: MR53V3252J-XXMA MR53V3252J-XXTP
    Text: This version: Feb. 1999 Previous version: - Semiconductor MR53V3252J Preliminary 2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM DESCRIPTION The MR53V3252J is a 32Mbit Read-Only Memory whose configuration can be electrically switched


    Original     		PDF MR53V3252J 152-Word 16-Bit 304-Word 16Word MR53V3252J 32Mbit 16bit MR53V3252J-XXMA MR53V3252J-XXTP

    74F219

    Abstract: 74F189 74F219PC 74F219SC M16B MS-001 MS-013 N16E
    Text: Revised January 2004 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs


    Original     		PDF 74F219 64-Bit 74F219 16word 74F189 74F219PC 74F219SC M16B MS-001 MS-013 N16E

    SEIKO

    Abstract: No abstract text available
    Text: Rev.1.1 S-24 Series SERIAL NON-VOLATILE RAM The S-24 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable 2 memory E PROM to backup the SRAM. The organization is 16wordx16-bit (total 256 bits) for the S-24H45 and the S-24S45, and 8word×8-bit (total 64 bits) for the S-24H30 and the S-24S30.


    Original     		PDF 16word 16-bit S-24H45 S-24S45, S-24H30 S-24S30. S-24H45 X2444 S-24S45 S-24H30 SEIKO

    Untitled

    Abstract: No abstract text available
    Text: 54F189,74F189 54F189 74F189 64-Bit Random Access Memory with TRI-STATE Outputs Literature Number: SNOS166A 54F 74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array Address inputs are buffered to minimize


    Original     		PDF 54F189 74F189 74F189 64-Bit SNOS166A

    Untitled

    Abstract: No abstract text available
    Text: This version: Feb. 1999 Previous version: - 電子デバイス MR533252J 暫定 2,097,152-Word X 16-Bit or 4,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM • 概要 MR533252J は 2,097,152 ワードx16 ビット構成と 4,194,304 ワード×8 ビット構成が切替可能


    Original     		PDF MR533252J 152-Word 16-Bit 16Word 100ns 100mA OP44-P-600-1

    DIP42-P-600-2

    Abstract: MR53V1652J MR53V1652J-XXMA MR53V1652J-XXRA MR53V1652J-XXTP
    Text: This version: Feb. 1999 Previous version: - 電子デバイス MR53V1652J 暫定 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM • 概要 MR53V1652J は 1,048,576 ワードx16 ビット構成と 2,097,152 ワード×8 ビット構成が切替可能


    Original     		PDF MR53V1652J 576-Word 16-Bit 152-Word 16Word 100ns DIP42-P-600-2 MR53V1652J-XXRA MR53V1652J MR53V1652J-XXMA MR53V1652J-XXRA MR53V1652J-XXTP

    54F189DL

    Abstract: 54F189FL 54F189LL 74F189 74F189PC 74F189SC 74F189SJ F189 J16A N16E
    Text: 54F 74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are TRISTATE and are in the high impedance state whenever the


    Original     		PDF 74F189 64-Bit 16word 74F189PC 54F189DL 54F189FL 54F189LL 74F189PC 74F189SC 74F189SJ F189 J16A N16E

    42-PIN

    Abstract: 44-PIN 48-PIN DIP42-P-600-2 MSM531652F
    Text: O K I Semiconductor MSM531652F_ 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM • DESCRIPTION The OKI M SM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The


    OCR Scan     		PDF MSM531652F_ 576-Words 16-bit 152-Bytes 16Words 32Bytes MSM531652F 42-PIN 44-PIN 48-PIN DIP42-P-600-2

    74ls189 ram

    Abstract: 74LS189 74LS189 logic diagram 74LS189DC 74LS189PC 74LS189FC 74S189DC 54LS189DM 54S189DM 74S189FC
    Text: 189 CONNECTION DIAGRAM PINOUT A ¡4S/74S189 ►54LS/74LS189 b n 7 S 0 ao [T ï i ] Vcc 64-BIT RANDOM ACCESS MEMORY C sU m a. With 3-State Outputs we |T T7| A2 Di [7 Ö1 [ ? j l ] A3 02 ï D ESC R IPTIO N — The '189 is a high speed 64-bit RAM organized as a 16word by 4 -b it array. Address inputs are buttered to m inimize loading and are


    OCR Scan     		PDF 4S/74S189 54LS/74LS189 64-BIT 16-word CLS189) 54/74S 54/74LS 74ls189 ram 74LS189 74LS189 logic diagram 74LS189DC 74LS189PC 74LS189FC 74S189DC 54LS189DM 54S189DM 74S189FC

    Untitled

    Abstract: No abstract text available
    Text: 00 <0 CT1 National J&fl Semiconductor 54F/74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI­


    OCR Scan     		PDF 54F/74F189 64-Bit 16word

    Untitled

    Abstract: No abstract text available
    Text: al Semiconductor August 1995 5 4 F /7 4 F 1 8 9 6 4 -B it R a n d o m A c c e s s M e m o ry w ith T R I-S T A T E O u tp u ts General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize


    OCR Scan     		PDF 64-bit 16word

    Untitled

    Abstract: No abstract text available
    Text: TC74HC40105AP/AF PRELIMINARY X 16 Word R E G I S T E R The TC74HC40105A is a high speed CMOS 4bit x 16word firs t-in , first-o u t FIFO Strage R egister fabricated with silicon gate C2MOS technolgy. It achieves the high speed operation while m aintaining


    OCR Scan     		PDF TC74HC40105AP/AF TC74HC40105A 16word TC74HC40105AP/

    MSM531655E

    Abstract: TSOP70-P-400 T8D20 065K
    Text: O K I Semiconductor MSM531655E_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM531655E is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit


    OCR Scan     		PDF MSM531655E 288-Double 32-bit 576-Words 16-bit 16Word 16-Bit/Page MSM531655E TSOP70-P-400 T8D20 065K

    Untitled

    Abstract: No abstract text available
    Text: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and


    OCR Scan     		PDF 54S/74S289 64-BIT 16word 54/74S 54/74LS

    Untitled

    Abstract: No abstract text available
    Text: 0> co 9 National Semiconductor 54F/74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI­


    OCR Scan     		PDF 54F/74F189 64-Bit 16word 74F189PC 54F189DL