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    140PF Search Results

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    Brady Worldwide Inc 5140P-F

    5140P-F BLK 4" GOTHIC QUIK-ALIGN
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    DigiKey 5140P-F Bulk 1
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    Microchip Technology Inc UFR3140PF

    DIODE GEN PURP 400V 30A DO21
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    DigiKey UFR3140PF Bulk 100
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    Avnet Americas UFR3140PF Bulk 35 Weeks 100
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    Mouser Electronics UFR3140PF
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    Newark UFR3140PF Bulk 100
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    Microchip Technology Inc UFR3140PF 35 Weeks
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    NAC UFR3140PF Tray 5
    • 1 $71.29
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    Master Electronics UFR3140PF
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    JRH Electronics 806-021-MT22-140PF

    Circular connector
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    DigiKey 806-021-MT22-140PF 1
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    JRH Electronics 806-021-NF22-140PF

    Circular connector
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    DigiKey 806-021-NF22-140PF 1
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    JRH Electronics 806-021-Z122-140PF

    Circular connector
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    DigiKey 806-021-Z122-140PF 1
    • 1 $3999.99
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    140PF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b0705

    Abstract: No abstract text available
    Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


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    TN0604 DSFP-TN0604 B070511 b0705 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


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    TN0604 140pF DSFP-TN0604 D080813 PDF

    TN0604N3-G

    Abstract: No abstract text available
    Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


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    140pF TN0604 DSFP-TN0604 C082012 TN0604N3-G PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance


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    TN0604 140pF DSFP-TN0604 B031411 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


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    TN0604 140pF DSFP-TN0604 C082012 PDF

    TSM40N03P

    Abstract: No abstract text available
    Text: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram


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    TSM40N03PQ56 PDFN56 140pF TSM40N03PQ56 TSM40N03P PDF

    ceramic filter W55F

    Abstract: murata 55E ceramic filter Murata SF 455 D CFUCF455KD1X-R0 murata ceramic filter 55d TOKO 455KHz filter a 55e w55c CFWLB455KEFA-B0 marking code smd toshiba murata 55D ceramic filter
    Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. P05E10.pdf 01.11.14


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    P05E10 P05E-10 ceramic filter W55F murata 55E ceramic filter Murata SF 455 D CFUCF455KD1X-R0 murata ceramic filter 55d TOKO 455KHz filter a 55e w55c CFWLB455KEFA-B0 marking code smd toshiba murata 55D ceramic filter PDF

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


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    RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems PDF

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


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    RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems PDF

    Ceramic Capacitors 104

    Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
    Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.


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    K99E-27 Ceramic Capacitors 104 mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1 PDF

    marking n3

    Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92 PDF

    RD07MVS1

    Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


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    RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101 PDF

    LC9943

    Abstract: 30462 LB8904M
    Text: Ordering number:ENN3046B Monolithic Digital IC LB8904M CCD Clock Driver Overview Package Dimensions The LB8904M is a monolithic IC designed to drive clock gates of a CCD image sensor LC9943, etc. at high speed. unit:mm 3073B-MFP30SD [LB8904M] Features 1


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    ENN3046B LB8904M LB8904M LC9943, 3073B-MFP30SD LB8904M] 45max 30-pin LC9943 30462 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components SB220 Thru SB260   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x x x x Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates


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    SB220 SB260 0V-60V DO-15 15K/W 50K/W PDF

    TPS65300-Q1

    Abstract: PSS302NZ B82462G4103MOOO buck converter 3kw PIC 1607
    Text: TPS65300-Q1 www.ti.com SLVSBB6B – MARCH 2012 – REVISED APRIL 2012 3-MHz Step-Down Regulator and Triple Linear Regulators Check for Samples: TPS65300-Q1 FEATURES DESCRIPTION • The TPS65300-Q1 power supply is a combination of a single switch-mode buck power supply and three


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    TPS65300-Q1 TPS65300-Q1 PSS302NZ B82462G4103MOOO buck converter 3kw PIC 1607 PDF

    RD07MVS1

    Abstract: skam 199j 329J
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:


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    AN-UHF-018-C RD07MVS1 RD07MVS1. RD07MVS1: 025XA" 031AA" 470MHz 136MHz 136MHz) 155MHz skam 199j 329J PDF

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


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    RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems PDF

    ADD8710

    Abstract: BUF11702 RU-28
    Text: 10-Channel Gamma Buffer with VCOM Driver ADD8710 Single-supply operation: 4.5 V to 18 V Upper/lower buffers swing to VS/GND Gamma continuous output current: >10 mA VCOM peak output current: 250 mA Offset voltage: 12 mV Slew rate: 8 V/µs Unity gain stable with large capacitive loads


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    10-Channel ADD8710 OUT10 Compac05 MO-153AE 28-Lead RU-28) ADD8710ARUZ1 ADD8710ARUZ-REEL1 ADD8710 BUF11702 RU-28 PDF

    TN0602

    Abstract: No abstract text available
    Text: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ


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    TN0602 TN0604 TN0602N3 TN0604N3 SOW-20* TN0604WG TN0602ND TN0604ND SO-20 140pF PDF

    tn0604n2

    Abstract: No abstract text available
    Text: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3


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    TN0602N2 TN0604N2 TN0602N3 TN0604N3 SOW-20* TN0604WG TN0602ND TN0604ND TN06L PDF

    Untitled

    Abstract: No abstract text available
    Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)


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    83mra) 203mm) JAN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468 PDF

    Untitled

    Abstract: No abstract text available
    Text: H D63085-Document Image Compression and Expansion Processor D I C E P The DICEP is an LSI that performs com pres­ sion (encoding) and expansion (decoding) of th e digital (tw o-value) data rep resen tin g a docum ent im age. The DICEP is u sed in G3 and G4 facsim ile


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    D63085--------------Document HD63085 PDF

    smd diode l232

    Abstract: BTB48-12S25D c5t smd BTB05-12W12D btb12 application note BTB05-12W12S BTB48-12W12D BTB24-12S25D BTB05-05S60D BTB24-05S60S
    Text: The Fifth Generation, Ultra Small Size, Isolated Type DC-DC Converter Beiinix_3Wait BTB Series BTB series is a thin, high efficiency, low noise isolated type DC-DC converter. To achieve miniaturization a new circuit was adopted. Circuit construction is made simple yet highly efficient.


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    AC500V BDD20061005 smd diode l232 BTB48-12S25D c5t smd BTB05-12W12D btb12 application note BTB05-12W12S BTB48-12W12D BTB24-12S25D BTB05-05S60D BTB24-05S60S PDF

    AC-326

    Abstract: No abstract text available
    Text: • asmais q d b o 23 m 45t ■ A -OS’ 19-/73 A COMPANY TYPE 224D Foil Tantalum Capacitors Foil Capacitors for +85°C and +125°C Operation Hermetically-Sealed, Rectangular Metal-Case T an talex OF SPRAGUE FEATURES High volumetric efficiency and a more reliable internal construction


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    MIL-C-3965. AC-326 PDF