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    TSM40N03P

    Abstract: No abstract text available
    Text: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram


    Original     		PDF TSM40N03PQ56 PDFN56 140pF TSM40N03PQ56 TSM40N03P

    N-Channel

    Abstract: No abstract text available
    Text: TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 100 V RDS on (max) 12 mΩ Qg 145 nC Features ● ● ● Block Diagram


    Original     		PDF TSM120N10PQ56 PDFN56 TSM120N10PQ56 900ppm 1500ppm 1000ppm N-Channel

    Untitled

    Abstract: No abstract text available
    Text: TSM058N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.8 mΩ Qg 118 nC Features Block Diagram ● Low On-Resistance


    Original     		PDF TSM058N06PQ56 PDFN56 TSM058N06PQ56 900ppm 1500ppm 1000ppm

    Untitled

    Abstract: No abstract text available
    Text: TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 2 VGS = 4.5V 3 Qg 82 nC Block Diagram Features


    Original     		PDF TSM020N03PQ56 PDFN56 TSM020N03PQ56 900ppm 1500ppm 1000ppm

    Untitled

    Abstract: No abstract text available
    Text: TSM090N08PQ56 75V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 75 V RDS on (max) 9 mΩ Qg 125 nC Features ● ● ● Block Diagram Low On-Resistance


    Original     		PDF TSM090N08PQ56 PDFN56 TSM090N08PQ56 900ppm 1500ppm 1000ppm

    Untitled

    Abstract: No abstract text available
    Text: TSM070N07PQ56 65V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 65 V RDS on (max) 7 mΩ Qg 125 nC Features ● ● ● Block Diagram Low On-Resistance


    Original     		PDF TSM070N07PQ56 PDFN56 TSM070N07PQ56 900ppm 1500ppm 1000ppm

    N-Channel

    Abstract: No abstract text available
    Text: TSM052N06PQ56 60V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS on (max) 5.2 mΩ Qg 50 nC Features Block Diagram ● Low On-Resistance


    Original     		PDF TSM052N06PQ56 PDFN56 TSM052N06PQ56 900ppm 1500ppm 1000ppm N-Channel

    Untitled

    Abstract: No abstract text available
    Text: TSM028N04PQ56 40V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 40 V RDS on (max) 2.8 mΩ Qg 78 nC Features ● ● ● Block Diagram Low On-Resistance


    Original     		PDF TSM028N04PQ56 PDFN56 TSM028N04PQ56 900ppm 1500ppm 1000ppm

    Untitled

    Abstract: No abstract text available
    Text: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram


    Original     		PDF TSM40N03PQ56 PDFN56 140pF TSM40N03PQ56

    Untitled

    Abstract: No abstract text available
    Text: TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram


    Original     		PDF TSM35N03PQ56 TSM35N03PQ56 PDFN56

    TSM35N03PQ56

    Abstract: No abstract text available
    Text: TSM35N03PQ56 30V N-Channel Power MOSFET PDFN 5x6 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 7 @ VGS =10V 12 9 @ VGS =4.5V 10 Block Diagram


    Original     		PDF TSM35N03PQ56 TSM35N03PQ56 PDFN56

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMD6D0DN30C TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION A2 This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC


    Original     		PDF KMD6D0DN30C Fig10.