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    Supertex Inc TN0602N3

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    TN0602N3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TN0602N3 Unknown FET Data Book Scan PDF

    TN0602N3 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TN0602N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.6 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


    Original     		PDF TN0602N3 Junc-Case125

    TN0602N3

    Abstract: TN0602 TN0602N2 SOW-20 TN0604N2 TN0602ND TN0604 TN0604N3 TN0604ND TN0604WG
    Text: TN0602 TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 SOW-20* DICE† 20V 0.75Ω 4.0A 1.6V — TN0602N3 — TN0602ND 20V 0.85Ω


    Original     		PDF TN0602 TN0604 SOW-20* TN0602N3 TN0602ND TN0602N2 TN0604N3 TN0604ND TN0604N2 TN0604WG TN0602N3 TN0602 TN0602N2 SOW-20 TN0604N2 TN0602ND TN0604 TN0604N3 TN0604ND TN0604WG

    TN0602N3

    Abstract: TN0604N3 SOW-20 TN0602 TN0602ND TN0604 TN0604ND TN0604WG
    Text: TN0602 TN0604 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-92 SOW-20* Die† 20V 0.75Ω 4.0A 1.6V TN0602N3 — TN0602ND 40V 0.75Ω 4.0A 1.6V


    Original     		PDF TN0602 TN0604 SOW-20* TN0602N3 TN0602ND TN0604N3 TN0604ND TN0604WG SO-20 TN0602N3 TN0604N3 SOW-20 TN0602 TN0602ND TN0604 TN0604ND TN0604WG

    S0211

    Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72


    Original     		PDF 2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 3N175 MPF6659 motorola *6659 2SK73

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    TN0602N3

    Abstract: TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


    Original     		PDF TN2504N8) TN0602N3) TN0602N3 TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"

    TN0602N3

    Abstract: BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001
    Text: TN06 Series Application Note AN–D9 3 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


    Original     		PDF TN2504N8) TN0602N3) TN0602N3 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001

    HV50530PG

    Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
    Text: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P


    Original     		PDF 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G HV50530PG hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3

    tn0604n2

    Abstract: No abstract text available
    Text: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3


    OCR Scan     		PDF TN0602N2 TN0604N2 TN0602N3 TN0604N3 SOW-20* TN0604WG TN0602ND TN0604ND TN06L

    Untitled

    Abstract: No abstract text available
    Text: TN0602 TN0604 Low Threshold ßi Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * BVDSS/ BV dgs ^DS ON (max) 20V 0.75a 20V 40V 40V 40V Same as TO-92 SOW-20* DICEt 1.6V — TN0602N3 — TN0602ND 0.850 4.0A 1.6V TN0602N2 —


    OCR Scan     		PDF TN0602 TN0604 SOW-20* TN0602N3 TN0602ND TN0602N2 TN0604N3 TN0604ND TN0604N2 TN0604WG

    TN0602

    Abstract: No abstract text available
    Text: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ


    OCR Scan     		PDF TN0602 TN0604 TN0602N3 TN0604N3 SOW-20* TN0604WG TN0602ND TN0604ND SO-20 140pF

    TN0602N2

    Abstract: TN06L TN0602N3
    Text: Supertex inc. ^ T N 06 L L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss / Order Number / Package ^ D S O N | b lO N ^ G S flh ) b v dgs (max) (min) (max) TO-39 TO-92 20V 0.7 5ÌÌ


    OCR Scan     		PDF TN0602N2 TN0604N2 TN0602N3 TN0604N3 SOW-20* TN0602ND TN0604ND TN0604WG TN06L TN06L