b0705
Abstract: No abstract text available
Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance
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TN0604
DSFP-TN0604
B070511
b0705
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance
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TN0604
140pF
DSFP-TN0604
D080813
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TN0604N3-G
Abstract: No abstract text available
Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance
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140pF
TN0604
DSFP-TN0604
C082012
TN0604N3-G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance
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TN0604
140pF
DSFP-TN0604
B031411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TN0604
140pF
DSFP-TN0604
C082012
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TSM40N03P
Abstract: No abstract text available
Text: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram
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TSM40N03PQ56
PDFN56
140pF
TSM40N03PQ56
TSM40N03P
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ceramic filter W55F
Abstract: murata 55E ceramic filter Murata SF 455 D CFUCF455KD1X-R0 murata ceramic filter 55d TOKO 455KHz filter a 55e w55c CFWLB455KEFA-B0 marking code smd toshiba murata 55D ceramic filter
Text: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. P05E10.pdf 01.11.14
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P05E10
P05E-10
ceramic filter W55F
murata 55E ceramic filter
Murata SF 455 D
CFUCF455KD1X-R0
murata ceramic filter 55d
TOKO 455KHz filter a 55e
w55c
CFWLB455KEFA-B0
marking code smd toshiba
murata 55D ceramic filter
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RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
RD07MVS1-101
T112
3M Touch Systems
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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Ceramic Capacitors 104
Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Text: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.
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K99E-27
Ceramic Capacitors 104
mev-50a
DXW21BN7511S
SAYFP1G95AA0B00
ck 66 ul94v-0 lcd
SAYFP897MCA0B00
SAFEB1G57KE0F00
SAWEN1G84
murata enc-03r
MA300D1-1
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marking n3
Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TN0604
140pF
MS-013,
DSFP-TN0604
A102507
marking n3
TN0604N3
75E1
MS-013
TN0604
TN0604N3-G
TN0604WG-G
n-channel fet to-92
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RD07MVS1
Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101
T112
07MVS1
3080D
RD07MVS
Rd07mvs1101
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LC9943
Abstract: 30462 LB8904M
Text: Ordering number:ENN3046B Monolithic Digital IC LB8904M CCD Clock Driver Overview Package Dimensions The LB8904M is a monolithic IC designed to drive clock gates of a CCD image sensor LC9943, etc. at high speed. unit:mm 3073B-MFP30SD [LB8904M] Features 1
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ENN3046B
LB8904M
LB8904M
LC9943,
3073B-MFP30SD
LB8904M]
45max
30-pin
LC9943
30462
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components SB220 Thru SB260 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x x x x Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates
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SB220
SB260
0V-60V
DO-15
15K/W
50K/W
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TPS65300-Q1
Abstract: PSS302NZ B82462G4103MOOO buck converter 3kw PIC 1607
Text: TPS65300-Q1 www.ti.com SLVSBB6B – MARCH 2012 – REVISED APRIL 2012 3-MHz Step-Down Regulator and Triple Linear Regulators Check for Samples: TPS65300-Q1 FEATURES DESCRIPTION • The TPS65300-Q1 power supply is a combination of a single switch-mode buck power supply and three
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TPS65300-Q1
TPS65300-Q1
PSS302NZ
B82462G4103MOOO
buck converter 3kw
PIC 1607
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RD07MVS1
Abstract: skam 199j 329J
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:
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AN-UHF-018-C
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
skam
199j
329J
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RD07MVS1-101
Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101,
RD07MVS1-101
T112
ID-750
RD07M
D07MVS1
3M Touch Systems
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ADD8710
Abstract: BUF11702 RU-28
Text: 10-Channel Gamma Buffer with VCOM Driver ADD8710 Single-supply operation: 4.5 V to 18 V Upper/lower buffers swing to VS/GND Gamma continuous output current: >10 mA VCOM peak output current: 250 mA Offset voltage: 12 mV Slew rate: 8 V/µs Unity gain stable with large capacitive loads
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10-Channel
ADD8710
OUT10
Compac05
MO-153AE
28-Lead
RU-28)
ADD8710ARUZ1
ADD8710ARUZ-REEL1
ADD8710
BUF11702
RU-28
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TN0602
Abstract: No abstract text available
Text: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ
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TN0602
TN0604
TN0602N3
TN0604N3
SOW-20*
TN0604WG
TN0602ND
TN0604ND
SO-20
140pF
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tn0604n2
Abstract: No abstract text available
Text: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3
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TN0602N2
TN0604N2
TN0602N3
TN0604N3
SOW-20*
TN0604WG
TN0602ND
TN0604ND
TN06L
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Untitled
Abstract: No abstract text available
Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)
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83mra)
203mm)
JAN2N3902,
JAN2N5157,
SDT401,
SDT430,
2N5466,
2N5468
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Untitled
Abstract: No abstract text available
Text: H D63085-Document Image Compression and Expansion Processor D I C E P The DICEP is an LSI that performs com pres sion (encoding) and expansion (decoding) of th e digital (tw o-value) data rep resen tin g a docum ent im age. The DICEP is u sed in G3 and G4 facsim ile
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D63085--------------Document
HD63085
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smd diode l232
Abstract: BTB48-12S25D c5t smd BTB05-12W12D btb12 application note BTB05-12W12S BTB48-12W12D BTB24-12S25D BTB05-05S60D BTB24-05S60S
Text: The Fifth Generation, Ultra Small Size, Isolated Type DC-DC Converter Beiinix_3Wait BTB Series BTB series is a thin, high efficiency, low noise isolated type DC-DC converter. To achieve miniaturization a new circuit was adopted. Circuit construction is made simple yet highly efficient.
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AC500V
BDD20061005
smd diode l232
BTB48-12S25D
c5t smd
BTB05-12W12D
btb12 application note
BTB05-12W12S
BTB48-12W12D
BTB24-12S25D
BTB05-05S60D
BTB24-05S60S
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AC-326
Abstract: No abstract text available
Text: • asmais q d b o 23 m 45t ■ A -OS’ 19-/73 A COMPANY TYPE 224D Foil Tantalum Capacitors Foil Capacitors for +85°C and +125°C Operation Hermetically-Sealed, Rectangular Metal-Case T an talex OF SPRAGUE FEATURES High volumetric efficiency and a more reliable internal construction
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MIL-C-3965.
AC-326
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