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    110N10 Search Results

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    110N10 Price and Stock

    Vishay Siliconix SUM110N10-09-E3

    MOSFET N-CH 100V 110A TO263
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    DigiKey SUM110N10-09-E3 Reel 3,200 800
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    SUM110N10-09-E3 Cut Tape 585 1
    • 1 $3.76
    • 10 $3.156
    • 100 $2.5528
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    Chip 1 Exchange SUM110N10-09-E3 19,756
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    STMicroelectronics STP110N10F7

    MOSFET N CH 100V 110A TO-220
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    DigiKey STP110N10F7 Tube 936 1
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    Avnet Americas STP110N10F7 Bulk 16 Weeks, 3 Days 1
    • 1 $3.22
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    STP110N10F7 Tube 26 Weeks 1,000
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    Mouser Electronics STP110N10F7 2,399
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    Newark STP110N10F7 Bulk 751 1
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    STMicroelectronics STP110N10F7 2,399 1
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    TME STP110N10F7 1
    • 1 $2.83
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    Avnet Silica STP110N10F7 750 17 Weeks 50
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    Chip1Stop STP110N10F7 Tube 1,000
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    Micro Commercial Components MCB110N10Y-TP

    N-CHANNEL MOSFET,D2-PAK
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    DigiKey MCB110N10Y-TP Reel 800 800
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    MCB110N10Y-TP Cut Tape 745 1
    • 1 $3.27
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    Mouser Electronics MCB110N10Y-TP
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    Littelfuse Inc IXTQ110N10P

    MOSFET N-CH 100V 110A TO3P
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    DigiKey IXTQ110N10P Tube 300 1
    • 1 $7.01
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    Newark IXTQ110N10P Bulk 300
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    Littelfuse Inc IXTT110N10L2-TRL

    MOSFET N-CH 100V 110A TO268
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    DigiKey IXTT110N10L2-TRL Cut Tape 265 1
    • 1 $20.68
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    IXTT110N10L2-TRL Digi-Reel 1
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    IXTT110N10L2-TRL Reel 400
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    Newark IXTT110N10L2-TRL Reel 400
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    Find more 110N10 price and stock on Findchips.com

    110N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFH110N10P

    Abstract: 110N10P
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 110N10P 110N10PS O-247 10oulombs IXFH110N10P IXFH110N10P 110N10P

    IXFV110N10P

    Abstract: PLUS220SMD 110N10P IXFH110N10P
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C


    Original     		PDF 110N10P 110N10PS 110N10P IXFV110N10P IXFV110N10P PLUS220SMD IXFH110N10P

    110N10P

    Abstract: No abstract text available
    Text: Advance Technical Information IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 = 15 V A Ω mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 110N10P O-268 405B2 110N10P

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM


    Original     		PDF 110N10P O-268

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr IXFH 110N10P IXFV 110N10P IXFV 110N10PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C


    Original     		PDF 110N10P 110N10PS 110N10P IXFV110N10P

    110N10P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFC 110N10P VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated = 100 V = 66 A Ω = 17 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 110N10P 110N10P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 110N10P 5-05-A

    110N10P

    Abstract: 110n10
    Text: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM


    Original     		PDF 110N10P 110N10P 110n10

    110N10P

    Abstract: 110n10
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 110N10P 5-05-A 110N10P 110n10

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 110N10F7-2, 110N10F7-6 N-channel 100 V, 4.9 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data Features Order codes RDS on max ID PTOT 100 V 6.5 mΩ 110 A 150 W 110N10F7-2 TAB TAB


    Original     		PDF STH110N10F7-2, STH110N10F7-6 STH110N10F7-2 DocID024027

    110N10F7

    Abstract: stp110n10f7 STF45N10F7 45N10F7 SB25
    Text: STF45N10F7, 110N10F7-2, 110N10F7 N-channel 100 V, 0.006 Ω typ., 120 A, STripFET VII DeepGATE™ Power MOSFET in TO-220FP, H2PAK-2 and TO-220 packages Datasheet — preliminary data Features Type VDSS RDS on max(1) ID PTOT STF45N10F7 100 V 0.007 Ω


    Original     		PDF STF45N10F7, STH110N10F7-2, STP110N10F7 O-220FP, O-220 STF45N10F7 STH110N10F7-2 O-220FP O-220 110N10F7 stp110n10f7 45N10F7 SB25

    110N10F7

    Abstract: VID21 STL11
    Text: 110N10F7 N-channel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet — preliminary data Features Type VDSS RDS on max ID PTOT 110N10F7 100 V 0.006 Ω (VGS= 10 V) 21 A 5W • Ultra low on-resistance


    Original     		PDF STL110N10F7 110N10F7 VID21 STL11

    Untitled

    Abstract: No abstract text available
    Text: 110N10F7 N-channel 100 V, 0.005 Ω typ., 107 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS 110N10F7 100 V RDS on max ID PTOT 0.006 Ω 107 A 136 W (VGS= 10 V) • Ultra low on-resistance


    Original     		PDF STL110N10F7 DocID024004

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    stp110n10f7

    Abstract: 110N10F7
    Text: 110N10F7 N-channel 100 V, 6 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet — preliminary data Features Order code VDSS RDS on max 110N10F7 100 V 7 mΩ • Ultra low on-resistance ■ 100% avalanche tested PTOT


    Original     		PDF STP110N10F7 O-220 O-220 110N10F7 2012in stp110n10f7

    STH110N10F7-2

    Abstract: No abstract text available
    Text: 110N10F7-2, 110N10F7-6 N-channel 100 V, 5.5 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in H2PAK-2 and H2PAK-6 packages Datasheet — preliminary data Features VDS RDS on max 100 V 6.5 mΩ Order codes 110N10F7-2 110N10F7-6 PTOT ID


    Original     		PDF STH110N10F7-2, STH110N10F7-6 STH110N10F7-2 110N10F7

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP

    Untitled

    Abstract: No abstract text available
    Text: 110N10F7, 110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS on max 100 V 0.007 Ω 110N10F7 TAB 110N10F7 1 2 3 1 TO-220FP


    Original     		PDF STF110N10F7, STP110N10F7 O-220FP O-220 STF110N10F7 O-220FP O-220 DocID024058