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    10N60P Search Results

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    10N60P Price and Stock

    Littelfuse Inc IXFA10N60P-TRL

    MOSFET N-CH 600V 10A D2-PAK
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    DigiKey IXFA10N60P-TRL Cut Tape 700 1
    • 1 $2.91
    • 10 $2.446
    • 100 $1.979
    • 1000 $1.979
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    IXFA10N60P-TRL Digi-Reel 1
    • 1 $2.91
    • 10 $2.446
    • 100 $1.979
    • 1000 $1.979
    • 10000 $1.979
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    IXFA10N60P-TRL Reel 800
    • 1 -
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    • 100 -
    • 1000 $1.93563
    • 10000 $1.93563
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    Newark IXFA10N60P-TRL Reel 800
    • 1 $2.56
    • 10 $2.56
    • 100 $2.56
    • 1000 $2.56
    • 10000 $2.11
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    Littelfuse Inc IXFN110N60P3

    MOSFET N-CH 600V 90A SOT227B
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    DigiKey IXFN110N60P3 Tube 613 1
    • 1 $41.86
    • 10 $37.302
    • 100 $32.7417
    • 1000 $32.7417
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    Newark IXFN110N60P3 Bulk 10 1
    • 1 $27.25
    • 10 $27.25
    • 100 $27.25
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    Littelfuse Inc IXFB110N60P3

    MOSFET N-CH 600V 110A PLUS264
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    DigiKey IXFB110N60P3 Tube 298 1
    • 1 $24.03
    • 10 $24.03
    • 100 $18.6771
    • 1000 $15.93776
    • 10000 $15.93776
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    Littelfuse Inc IXFA10N60P

    MOSFET N-CH 600V 10A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFA10N60P Tube 272 1
    • 1 $2.91
    • 10 $2.91
    • 100 $1.979
    • 1000 $1.93562
    • 10000 $1.93562
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    Newark IXFA10N60P Bulk 300
    • 1 -
    • 10 -
    • 100 $2.76
    • 1000 $2.22
    • 10000 $2.06
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    Littelfuse Inc IXFP10N60P

    MOSFET N-CH 600V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP10N60P Tube 68 1
    • 1 $2.13
    • 10 $2.13
    • 100 $1.4473
    • 1000 $1.41562
    • 10000 $1.41562
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    Newark IXFP10N60P Bulk 300
    • 1 -
    • 10 -
    • 100 $2.65
    • 1000 $2.13
    • 10000 $1.98
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    Find more 10N60P price and stock on Findchips.com

    10N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n60p

    Abstract: d 1065
    Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V


    Original     		PDF 10N60P O-220 O-263 O-263) O-263 10n60p d 1065

    MOSFET IXYS TO-263

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 10N60P 10N60P O-220 O-263 405B2 MOSFET IXYS TO-263

    10N60P

    Abstract: UA740
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A Ω RDS on ≤ 740 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 10N60P 10N60P UA740

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 10N60P 10N60P O-263 O-220 405B2

    10N60PM

    Abstract: IXTP10N60PM
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF 10N60PM O-220 405B2 10N60PM IXTP10N60PM

    10n60p

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 10N60P 10N60P O-263 O-220

    10N60P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 10N60P O-263 O-263) O-220 O-263 10N60P

    IXTP10N60PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF 10N60PM O-220 405B2 IXTP10N60PM

    10N60P

    Abstract: g 10N60 TJM 10
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V = 10 A ID25 Ω RDS on ≤ 740 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 10N60P 10N60P g 10N60 TJM 10

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p