100 N 37 TRANSISTOR Search Results

100 N 37 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

100 N 37 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IRF520 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ	Original	IRF520	PDF
STH65N05 Abstract: STH65N05FI 65260a Text: STH65N05 STH65N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH65N05 STH65N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 65 A 37 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STH65N05 STH65N05FI 100oC 175oC O-218 ISOWATT218 STH65N05 STH65N05FI 65260a	PDF
Untitled Abstract: No abstract text available Text: IRF521 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)9.2# I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)37# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60# Minimum Operating Temp (øC)-55õ	Original	IRF521	PDF
STK9N10 Abstract: transistor DI 468 circuit diagram application TRANSISTOR b72 100VDS Text: • 7*^837 0G4bDbfl 37^ ■ S G T H _ r z 7 SCS-THOMSON STK9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK9N10 > ■ . . . . . . V dss 100 V R D S o n < 0.3 Id n 9A TYPICAL RDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	OCR Scan	STK9N10 STK9N10 100VDS 100S1 transistor DI 468 circuit diagram application TRANSISTOR b72	PDF
Untitled Abstract: No abstract text available Text: International S Rectifier Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary 100 Volt, 0.028£2, HEXFET Part Number B V dss RDS on Id IR F N 37 10 100 V 0 .0 2 8 Q 45A Generation 5 H E X F E T s from International Rectifier	OCR Scan	IRFN3710 5S452	PDF
IRF 9110 Abstract: FR9110 FU9110 IRFR9111 Text: HE INTERNATIONAL RECTIFIER D \| MÖS5452 QQQÖ324 7 \| Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET	OCR Scan	S5452 T-37-25 IRFR9110 IRFRS111 IRFU9110 IRFU9111 IRFR9110, IRFR9111, IRFU9110, IRFU9111 IRF 9110 FR9110 FU9110 IRFR9111	PDF
pj 88 diode Abstract: pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 irfu9121 IRFR9121 irff* p-channel hexfet C82 diode Text: HE D \| MflSSMSS Q0Qfl332 fc» \| Data Sheet No. PD-9.520B INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9120 IRFR9121 IRFUS120 IRFU0121 P -C H A N N E L -100 Volt, 0.60 Ohm HEXFET	OCR Scan	T-37-25 IRFU9121 MflS5455 IRFR9120, IRFR9121, IRFU9120, IRFU9121 IRFR9120TR pj 88 diode pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 IRFR9121 irff* p-channel hexfet C82 diode	PDF
UNITRODE TRANSISTORS Abstract: F-111 Text: ^5 UNITRODE CORP □D1GÛ21 7 T ~ Ô347963 UNITRODE CORP 92 D 10821 D/ -37-0 UFNF110 UFNF111 U F N F I 12 u fn fiis POWER MOSFET TRANSISTORS 100 Volt, 0.60 Ohm N-Channel D E S C R IP T IO N The Unltrode power M O S F E T d esign utilizes the m ost advanced technology available.	OCR Scan	UFNF110 UFNF111 T347Tti3 UFNF111 UFNF112 UFNF113 FNF110 UNITRODE TRANSISTORS F-111	PDF
BUZ172 Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor BUZ 172 • P channel • Enhancement mode • Avalanche rated Type v DS BUZ172 - 100 V —5.5 A ^DS on Package 1> Ordering Code 0.6 TO-220 AB C67078-A1451-A2 n Maximum Ratings Parameter Symbol Tc = 37 "C Tc = 25 "C Continuous drain current,	OCR Scan	BUZ172 O-220 C67078-A1451-A2 BUZ172	PDF
Motorola 4N35 Abstract: 4n36 motorola Text: MOTOROLA Order this document by 4N35/D SEMICONDUCTOR TECHNICAL DATA & TO VD E UL CSA ® SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-P in DIP Optoisolators Transistor Output 4N 35* 4N 36 4N 37 [C T R = 100% Min] T he 4N 35, 4N 36 and 4 N 3 7 d e vice s co n sist o f a ga llium arsenide infrared	OCR Scan	4N35/D Motorola 4N35 4n36 motorola	PDF
ECG1900 Abstract: ECG116 Transistor 123AP 123AP ad 4606 SI 4606 10MF Text: PHILIPS 17E E C G INC ^53=126 GOGSbOa S T -5 8 -1 1 -2 3 ECG1900 Positive VR, 3 Terminal, Adjustable S e m ic o n d u c to rs .200 " - 5 .0 8 -) DIA. Features • Output current 100 rnA • Output adjustable between 1.2 V and 37 V • Internal thermal overload protection	OCR Scan	ECG1900 T-58-11-23 ECG1900 ECG116 ECG116 Transistor 123AP 123AP ad 4606 SI 4606 10MF	PDF
D44C3 Abstract: saia Text: NATL SEMICOND This Material DISCRETE HE D \| t S D 1 1 3 D „□□3 ?lfl3 b \| C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r T - 3 3 'Oi This NPN Bipolar Power Transistors Continued 45 5 10* 55 25 10 D44C5 TO-220 (37) 45 5 100	OCR Scan	tSD113D D44C3 saia	PDF
Untitled Abstract: No abstract text available Text: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage	OCR Scan	023b32G 12-mm Q62702- F1304 OT-223 F1305 8FN39 fl23ti32Q	PDF
2SC3586 Abstract: NE68000 2SC3585 NE68035 2SC3587 NE68033 NE680 NE68037 epitaxial micro-x IE68C Text: N E C / S 1SE CALIFORNIA E D • 1=427414 QDG143b b tsh t NE68000 NE68033 NE68035 NE68037 NPN SILICON HIGH FREQUENCY TRANSISTOR C FEATURES DESCRIPTION AND APPLICATIONS • HIG H GAIN BANDW IDTH PRODUCT: fr = 10 GHz The NE680 series o f NPN epitaxial silicon transistors is	OCR Scan	NE68000 NE68033 NE68035 NE68037 NE680 2SC3586 2SC3585 2SC3587 NE68037 epitaxial micro-x IE68C	PDF

The 8002 Amplifier IC Abstract: 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767 Text: 2N3740* 2N3741* 2N3741A *also available as JA N , JA N TX , JA NTXV MEDIUM-POWER PNP TRANSISTORS .ideal for use as drivers, switches and medium-power amplifier application. These devices feature: • • • • • POWER TRANSISTOR PNP SILICON 60 - 80 VOLTS	OCR Scan	2N3740* 2N3741* 2N3741A 2N3740, 2N3766 2N3740) 2N3767 2N3741) 2N3741 The 8002 Amplifier IC 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767	PDF
2N3798 Abstract: 2N3799 MPQ3798 MPQ3799 RNW transistor Text: MPQ3798 silicon MPQ3799 QUAD DUAL-IN-LINE PNP SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL-IN LINE PNP SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, low-noise amplifier applications. • DC Current Gain Specified - 10/jA dc to 10 mAdc h fE = 1^0 (Min) @ lc = 500 jjAdc — MPQ3798	OCR Scan	MPQ3798 MPQ3799 10/jAdc MPQ3799 2N3798 2N3799 O-116 MPQ3798 RNW transistor	PDF
2SC3584 Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583 Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for	OCR Scan	OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583	PDF
NEC NE85635 Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635 Text: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is	OCR Scan	NE856 NEC NE85635 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 sot23 41 NE85635	PDF
NE02136 Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package	PDF
d1878 Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459 Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258	OCR Scan	A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459	PDF
al 232 nec Abstract: NE64400 NE644 NE64408 S21E Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors	OCR Scan	b427414 NE64400 NE64408 NE644 gain60 al 232 nec NE64408 S21E	PDF
darlington opto coupler Abstract: FCD850 FCD850C FCD855 FCD855C opto 4N33 Text: CouplersTransistor Output Cont’d Max Ratings (a! TA 25°C Diode Transistor ic VCEO V Vr V mA V iso kV 1.5 Device No. PD mW ÏIL111 ! TIL112 TIL114 « TIL115 TIL116 TIL117 TIL118 250 — 30 3.0 100 250 — 20 3.0 100 1.5 250 — 30 3.0 100 2.5 250 — 20	OCR Scan	TILI12 TILI14 TILI15 TILI16 TILI17_ TILI18 FCD850 FCD850C FCD855 FCD855C darlington opto coupler FCD850 FCD850C FCD855 opto 4N33	PDF
2SC2407 equivalent Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600 Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The	OCR Scan	L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600	PDF
2SC2570 Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135 Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco	OCR Scan	bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135	PDF

100 N 37 TRANSISTOR Search Results

100 N 37 TRANSISTOR Result Highlights (5)

100 N 37 TRANSISTOR Datasheets Context Search

Untitled

STH65N05

Untitled

STK9N10

Untitled

IRF 9110

pj 88 diode

UNITRODE TRANSISTORS

BUZ172

Motorola 4N35

ECG1900

D44C3

Untitled

2SC3586

The 8002 Amplifier IC

2N3798

2SC3584

NEC NE85635

NE02136

d1878

al 232 nec

darlington opto coupler

2SC2407 equivalent

2SC2570