Untitled
Abstract: No abstract text available
Text: 1 FO-52847-F 2 3 CPX J 4 ACCURACY GRADE C DESIGNATES PRESSURE - LOW PRESSURE IN H H 8 9 F H O 2 DOCUMENT 5 0069858 4 P1 05OCT10 RS .03 3 3 .29 .23 .39 CPX100G I VENT (P2 .16 4 3 3 PRESSURE REFERENCE G BM CHECK .11 .30 3 - AXIAL CHANGED BY J .35 CPXL10GF
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FO-52847-F
05OCT10
CPXL04GF
CPXL10GF
CPX100G
13MAR01
5M-1994
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Untitled
Abstract: No abstract text available
Text: FO-52847-F 1 2 3 CPX J 4 5 6 7 8 9 DOCUMENT F 0069858 G SERIES 10 REV CHANGED BY BM CHECK 05OCT10 RS J CATALOG LISTINGS CPXL04DF DESIGNATES PRESSURE L I - LOW PRESSURE IN H 2 CPXL10DF C O CPX01DF SCDA133 CPXL 10DF - NO DESIGNATION (PSI) H I PORT OPTION PRESSURE RANGE
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FO-52847-F
05OCT10
CPXL04DF
CPXL10DF
CPX01DF
SCDA133
13MAR06
5M-1994
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Untitled
Abstract: No abstract text available
Text: IRLZ24S_RC, IRLZ24L_RC, SiHLZ24S_RC, SiHLZ24L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLZ24S
IRLZ24L
SiHLZ24S
SiHLZ24L
AN609,
8885m
1559m
1050m
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Untitled
Abstract: No abstract text available
Text: VS-80CPH03-F3 Vishay Semiconductors Hyperfast Rectifier, 2 x 40 A FRED Pt FEATURES Base common cathode • Ultrafast recovery time • Low forward voltage drop 2 • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS directive 2002/95/EC
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VS-80CPH03-F3
2002/95/EC
O-247AC
VS-80CPH03-F3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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AN609
Abstract: IRLZ34L IRLZ34S SiHLZ34S
Text: IRLZ34S_RC, IRLZ34L_RC, SiHLZ34S_RC, SiHLZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLZ34S
IRLZ34L
SiHLZ34S
SiHLZ34L
AN609,
4829m
1545m
8453m
8853m
8989m
AN609
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GL24C
Abstract: 335 35K A5009 IEC-947-5-1 AC15 A600
Text: GL SERIES CHART 1 SIDE ROTARY 6,5 ,26 Y 3,2 .13 Z X 70,00 MAX 2,756 38,1 1,50 GLZ54J: 200,00 / 7.870 MAX GLZ54K: 140,00 / 5.510 MAX ALUMINUM ROD 20,0 ,79 4 102,9 4,05 62,0 2,44 GLZ54J: 201,5 / 7.93 GLZ54K: 141,0 / 15.56 82,0 3,23 60,0 2,36 75,8 2,99 7,3 ,29
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GLZ54J:
GLZ54K:
GLZ51A
GLZ51B
GLZ51C
GLZ51Y
GLZ51T
GLZ51
GL24C
335 35K
A5009
IEC-947-5-1 AC15 A600
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Untitled
Abstract: No abstract text available
Text: VS-30L30CT-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common cathode 2 • • • • • 2 1 Common 3 Anode cathode Anode TO-262 • • PRODUCT SUMMARY Package TO-262AA IF AV 2 x 15 A VR 30 V • • • VF at IF 0.37 V IRM 350 mA at 125 °C
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VS-30L30CT-1PbF
J-STD-020,
2002/95/EC
AEC-Q101
O-262
O-262AA
11-Mar-11
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AN609
Abstract: IRLZ34 SiHLZ34
Text: IRLZ34_RC, SiHLZ34_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLZ34
SiHLZ34
AN609,
5985m
2012m
8061m
1186m
8087m
5497m
5344u
AN609
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 66 FLAMABILITY RATING: UL94-V0 COLOR: GREEN METAL HOUSING: BRASS CuZn TERMINAL SCREW: STEEL ZINC PLATING TERMINAL SCREW SLOT TYPE: "-" CONTACT: BRASS WIRE GUARD: PhBz TIN PLATED A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
300VAC
E315414
340VAC
05-OCT-10
16-OCT-09
05-NOV-08
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Untitled
Abstract: No abstract text available
Text: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLZ14
SiHLZ14
AN609,
CONFIGURATI5-Oct-10
8649m
6211m
0526u
9391m
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Untitled
Abstract: No abstract text available
Text: IRLZ14S_RC, IRLZ14L_RC, SiHLZ14S_RC, SiHLZ14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRLZ14S
IRLZ14L
SiHLZ14S
SiHLZ14L
AN609,
8649m
6211m
0526u
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JC EC
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: LCP COLOUR: BLACK CONTACT MATERIAL: PHOSPHORE BRONZE CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS TIN PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: –25 °C UP TO 85 °C
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UL94-V0
09-NOV-11
05-OCT-10
08-JUL-10
05-DEC-07
20-NOV-07
JC EC
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AN609
Abstract: IRLZ24 SiHLZ24
Text: IRLZ24_RC, SiHLZ24_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLZ24
SiHLZ24
AN609,
0711m
4401m
0636m
3602m
6682m
4364m
5982m
AN609
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Untitled
Abstract: No abstract text available
Text: VS-30L30CT-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common cathode 2 • • • • • 2 1 Common 3 Anode cathode Anode TO-262 • • PRODUCT SUMMARY Package TO-262AA IF AV 2 x 15 A VR 30 V • • • VF at IF 0.37 V IRM 350 mA at 125 °C
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VS-30L30CT-1PbF
J-STD-020,
2002/95/EC
AEC-Q101
O-262
O-262AA
11-Mar-11
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as3d
Abstract: AS3PD
Text: New Product AS3PD thru AS3PM Vishay General Semiconductor High Current Density Standard Avalanche Surface Mount Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP Series • Ideal for automated placement • Glass passivated chip junction
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AEC-Q101
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
11-Mar-11
as3d
AS3PD
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Untitled
Abstract: No abstract text available
Text: VS-30L30CT-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common cathode 2 • • • • • 2 1 Common 3 Anode cathode Anode TO-262 • • PRODUCT SUMMARY Package TO-262AA IF AV 2 x 15 A VR 30 V • • • VF at IF 0.37 V IRM 350 mA at 125 °C
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VS-30L30CT-1PbF
O-262
O-262AA
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-30L30CT-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common cathode 2 • • • • • 2 1 Common 3 Anode cathode Anode TO-262 • • PRODUCT SUMMARY Package TO-262AA IF AV 2 x 15 A VR 30 V • • • VF at IF 0.37 V IRM 350 mA at 125 °C
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VS-30L30CT-1PbF
J-STD-020,
2002/95/EC
AEC-Q101
O-262
O-262AA
2011/65/EU
2002/95/EC.
2011/65/EU.
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1.4593
Abstract: AN609 IRLIZ44G
Text: IRLIZ44G_RC, SiHLIZ44G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLIZ44G
SiHLIZ44G
AN609,
8570m
8196m
9562m
3321m
6982m
2438m
05-Oct-10
1.4593
AN609
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Untitled
Abstract: No abstract text available
Text: IMCH-1812 Vishay Dale Wirewound, Surface Mount, Molded Inductors FEATURES • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, 500/reel, EIA-481 • Compatible with vapor phase, infrared and
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IMCH-1812
500/reel,
EIA-481
2002/95/EC
18-Jul-08
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VS-80CPH03-F3
Abstract: No abstract text available
Text: VS-80CPH03-F3 Vishay Semiconductors Hyperfast Rectifier, 2 x 40 A FRED Pt FEATURES Base common cathode • Ultrafast recovery time • Low forward voltage drop 2 • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS directive 2002/95/EC
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Original
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PDF
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VS-80CPH03-F3
2002/95/EC
O-247AC
VS-80CPH03-F3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product AS4PD thru AS4PM Vishay General Semiconductor High Current Density Standard Avalanche Surface Mount Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP Series • Ideal for automated placement • Glass passivated chip junction
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Original
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PDF
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AEC-Q101
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: GL SERIES CHART 1 SIDE ROTARY 6,5 ,26 Y 3,2 .13 Z X 70,00 MAX 2,756 38,1 1,50 GLZ54J: 200,00 / 7.870 MAX GLZ54K: 140,00 / 5.510 MAX ALUMINUM ROD 20,0 ,79 4 62,0 2,44 60,0 2,36 CONDUIT ENTRY 5,3 ,21 FIGURE 1 30,0 1,18 42,0 1,65 LEVER REPLACES PAGE X DIM Y DIM Z DIM
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GLZ54J:
GLZ54K:
GLZ51A
GLZ51B
GLZ51C
GLZ51Y
GLZ51T
GLZ51
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